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31 条记录 (耗时 0.012 秒)

    Integrated CRC filter circuit
    2.
    发明授权
    Integrated CRC filter circuit 失效
    集成CRC滤波电路

    公开(公告)号：US4399417A

    公开(公告)日：1983-08-16

    申请号：US157452

    申请日：1980-06-06

    申请人： James P. Ballantyne ,  Paul E. Fleischer ,  Kenneth R. Laker ,  Aristides A. Yiannoulos

    发明人： James P. Ballantyne ,  Paul E. Fleischer ,  Kenneth R. Laker ,  Aristides A. Yiannoulos

    IPC分类号： H01L27/07 ,  H03H11/12 ,  H01L29/94 ,  H01L27/04 ,  H03H7/01

    CPC分类号： H03H7/0123 ,  H01L27/0794 ,  H03H1/02 ,  H03H11/1204

    摘要： A capacitor-resistor-capacitor (CRC) element for active filter realization, which is fully integrable and compatible with MOS technology, is described. The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element is closely analogous to a depletion mode MOS field effect device, except that the channel zone 26 is doped to a level which substantially precludes conductivity modulation at the usual operating voltages. However, the doping level is such as to enable the use of the channel zone as a semiconductor resistance element. Thus, the N-channel CRC element realized in the NMOS technology comprises a first capacitance composed of the gate 27, gate dielectric 38, and resistive channel 26, paralleled by the resistive channel 26 itself constituting a resistor, and then the underlying PN junction capacitance between the N-type resistive channel 26 and the underlying P-type semiconductor body portion 21. An active low-pass filter consists of two CRC elements and an operational amplifier and utilizes the positive feedback principle.

    摘要翻译： 描述了用于有源滤波器实现的电容器 - 电阻 - 电容（CRC）元件，其完全可集成并且与MOS技术兼容。 还描述了将CRC元件结合到半导体集成电路有源滤波器中。 CRC滤波器元件的结构非常类似于耗尽型MOS场效应器件，不同之处在于通道区26被掺杂到基本上阻止在通常工作电压下的电导率调制的水平。 然而，掺杂水平使得能够使用沟道区作为半导体电阻元件。 因此，在NMOS技术中实现的N沟道CRC元件包括由栅极27，栅极电介质38和电阻通道26组成的第一电容，其由构成电阻器的电阻通道26本身并联，然后是下面的PN结电容 N型电阻通道26与下面的P型半导体主体部分21之间。有源低通滤波器由两个CRC元件和运算放大器组成，并利用正反馈原理。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09287346B2

    公开(公告)日：2016-03-15

    申请号：US13749003

    申请日：2013-01-24

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jeong-Yun Lee ,  Moo-Jin Kim

    IPC分类号： H01L49/02 ,  H01L27/07 ,  H01L27/06

    CPC分类号： H01L28/40 ,  H01L27/0688 ,  H01L27/0794

    摘要： A semiconductor device includes a semiconductor substrate having a capacitor region and a resistor region. A capacitor dielectric material and a capacitor electrode are sequentially stacked on an active region in the capacitor region of the semiconductor substrate. A resistor is provided on the resistor region of the semiconductor substrate. A protection pattern is provided on a top surface of the capacitor electrode. The protection pattern is spaced apart from the capacitor electrode. The protection pattern and the resistor include the same material and have the same thickness in a direction vertical to a surface of the semiconductor substrate.

    摘要翻译： 半导体器件包括具有电容器区域和电阻器区域的半导体衬底。 电容器电介质材料和电容器电极依次层叠在半导体基板的电容器区域的有源区上。 电阻器设置在半导体衬底的电阻器区域上。 在电容器电极的顶表面上提供保护图案。 保护图案与电容器电极间隔开。 保护图案和电阻器包括相同的材料并且在垂直于半导体衬底的表面的方向上具有相同的厚度。

    Semiconductor-on-insulator resistor-capacitor circuit
    5.
    发明申请
    Semiconductor-on-insulator resistor-capacitor circuit 失效
    绝缘体上半导体电阻电容电路

    公开(公告)号：US20030067044A1

    公开(公告)日：2003-04-10

    申请号：US10298756

    申请日：2002-11-18

    发明人： Harry Muljono ,  Stefan Rusu

    IPC分类号： H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

    CPC分类号： H01L27/08 ,  H01L27/0794 ,  H01L27/0802 ,  H01L29/7841 ,  H01L29/78612

    摘要： A semiconductor device may be formed with a floating body positioned over an insulator in a semiconductor structure. A gate may be formed over the floating body but spaced therefrom. The semiconductor structure may include doped regions surrounding the floating body The floating body provides a distributed capacitance and resistance along its length to form an integrated RC circuit. The extent of the resistance is a function of the cross-sectional area of the floating body along the source and drain regions and its capacitance is a function of the spacing between the doped regions and the body and between the gate and the body. In some embodiments of the present invention, compensation for input voltage variations may be achieved.

    摘要翻译： 半导体器件可以形成有位于半导体结构中的绝缘体上方的浮动体。 门可以形成在浮体上方但与之隔开。 半导体结构可以包括围绕浮体的掺杂区域。浮体沿其长度提供分布的电容和电阻以形成集成的RC电路。 电阻的程度是浮体沿着源区和漏极区的横截面面积的函数，其电容是掺杂区与体之间以及栅与体之间的间隔的函数。 在本发明的一些实施例中，可以实现对输入电压变化的补偿。

    Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
    6.
    发明授权
    Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor 失效
    用阻燃电容器组合阻尼电阻制造集成电路的工艺

    公开(公告)号：US3769105A

    公开(公告)日：1973-10-30

    申请号：US3769105D

    申请日：1971-04-12

    申请人： IBM

    发明人： CHEN C ,  DHAKA V ,  KROLIKOWSKI W

    IPC分类号： H01L27/07 ,  H01L7/36 ,  H01L19/00

    CPC分类号： H01L27/0794 ,  H01L27/0755 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/145 ,  Y10S148/151 ,  Y10S438/901

    摘要： An integrated circuit and process for making it wherein a decoupling capacitor is provided beneath devices in the surface of the integrated circuit by the formation of a first epitaxial layer between an N substrate having a P zone diffused therein and an N device-containing epitaxial layer. A P channel diffusion to the P zone formed in the substrate will serve as a damping resistor in combination with the coupling capacitor. The process for forming such a decoupling capacitor in an integrated circuit comprises, inter alia, diffusing P impurities into the substrate to form a large junction which will subsequently function as a decoupling capacitor. A first intrinsic, P or N epitaxial layer is then grown on the semiconductor substrate. Subsequently, an N epitaxial layer is grown on the first epitaxial layer. A P channel is then driven through the N epitaxial layer and the first epitaxial layer to contact the P diffused zone which serves as the decoupling capacitor. This P channel diffusion will serve as a damping resistor in combination with the decoupling capacitor. Device diffusion, i.e., transistors, resistors, etc., will take place into the N epitaxial layer, and during growth of the epitaxial layers the P zone will significantly outdiffuse into the first epitaxial layer. Appropriate channels, isolations and contacts are also provided.

    摘要翻译： 一种用于制造其的集成电路和工艺，其中在集成电路的表面中的器件下方提供去耦电容器，该第一外延层在扩散在其中的P +区之间形成第一外延层，N + 含有器件的外延层。 在衬底中形成的P +区的P +沟道扩散将用作与耦合电容器组合的阻尼电阻器。 在集成电路中形成这种去耦电容器的过程尤其包括将P +杂质扩散到衬底中以形成随后用作去耦电容器的大结。 然后在半导体衬底上生长第一固有的P +或N - 外延层。 随后，在第一外延层上生长N +外延层。 然后通过N +外延层和第一外延层驱动P +沟道以接触用作去耦电容器的P +扩散区。 该P +通道扩散将与去耦电容器一起用作阻尼电阻器。 器件扩散，即晶体管，电阻器等将发生到N +外延层中，并且在外延层生长期间，P +区将显着地超出第一外延层的扩散。 还提供了适当的通道，隔离和触点。

    Reflection phase shifter utilizing microstrip directional coupler
    7.
    发明授权
    Reflection phase shifter utilizing microstrip directional coupler 失效
    反射相位转换器利用MICROSTRIP方向耦合器

    公开(公告)号：US3560891A

    公开(公告)日：1971-02-02

    申请号：US3560891D

    申请日：1969-03-24

    申请人： WESTINGHOUSE ELECTRIC CORP

    发明人： MACLEAY ROBERT Q ,  WHICKER LAWRENCE R

    IPC分类号： H01L27/07 ,  H01P1/185 ,  H01P5/04 ,  H01P1/18 ,  H01P5/14

    CPC分类号： H01L27/0794 ,  H01P1/185 ,  H01P5/04

    摘要： DESCRIBED IS A REFLECTIVE PHASE SHIFTER, UTILIZING MICROSTRIP TRANSMISSION LINES, WHICH ALLOWS FOR A CONTINUOUSLY VARIABLE DIFFERENTIAL PHASE SHIFT OVER A GIVEN RANGE. THE BASIC ELEMENTS OF THE DEVICE ARE (1) A MICROSTRIP QUARTERWAVELENGTH PARALLEL-LINE DIRECTIONAL COUPLER FORMED ON A SEMICONDUCTIVE SUBSTRATE AND HAVING THREE OF ITS FOUR ARMS OF SPECIFIC LENGTH AND EITHER OPEN-ENDED OR TERMINATED IN SHORTS, (2) A DISTRIBUTED P-N JUNCTION FORMED IN THE SEMICONDUCTIVE SUBSTRATE IN THE COUPLING REGION BETWEEN THE TWO PARALLEL MICROSTRIPS OF THE COUPLER AND (3) AN EXTERNAL DIRECT CURRENT VOLTAGE SOURCE FOR BIASING THE P-N JUNCTION TO CHANGE THE COUPLING CAPACITANCE BETWEEN THE PARALLEL MICROSTRIPS.