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    Ion beam lithography
    1.
    发明授权
    Ion beam lithography 失效
    离子束光刻

    公开(公告)号：US4985634A

    公开(公告)日：1991-01-15

    申请号：US226275

    申请日：1988-07-29

    Applicant: Gerhard Stengl ,  Hilton F. Glavish

    Inventor： Gerhard Stengl ,  Hilton F. Glavish

    IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04928 ,  H01J2237/1207 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

    Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

    Abstract translation: 描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。 所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。 通过协调选择光学柱的参数，同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

    Method of forming a quadrupole device for projection lithography by means of charged particles
    2.
    发明授权
    Method of forming a quadrupole device for projection lithography by means of charged particles 失效
    通过带电粒子形成用于投影光刻的四极装置的方法

    公开(公告)号：US06365903B2

    公开(公告)日：2002-04-02

    申请号：US09824620

    申请日：2001-04-02

    Applicant: Marcellinus P. C. M. Krijn

    Inventor： Marcellinus P. C. M. Krijn

    IPC: H01J37153

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Method of forming a quadrupole device for projection lithography by means of charged particles
    3.
    发明申请
    Method of forming a quadrupole device for projection lithography by means of charged particles 失效
    通过带电粒子形成用于投影光刻的四极装置的方法

    公开(公告)号：US20010023926A1

    公开(公告)日：2001-09-27

    申请号：US09824620

    申请日：2001-04-02

    Applicant: PHILIPS CORPORATION

    Inventor： Marcellinus P.C.M. Krijn

    IPC: G21K001/08

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Quadrupole device for projection lithography by means of charged particles
    4.
    发明授权
    Quadrupole device for projection lithography by means of charged particles 失效
    用于通过带电粒子进行投影光刻的四极杆装置

    公开(公告)号：US06236052B1

    公开(公告)日：2001-05-22

    申请号：US09392686

    申请日：1999-09-09

    Applicant: Marcellinus P. C. M. Krijn

    Inventor： Marcellinus P. C. M. Krijn

    IPC: H01J37153

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Multi-beam source
    7.
    发明授权
    Multi-beam source 有权
    多光束源

    公开(公告)号：US08183543B2

    公开(公告)日：2012-05-22

    申请号：US12178153

    申请日：2008-07-23

    Applicant: Elmar Platzgummer

    Inventor： Elmar Platzgummer

    IPC: A61N5/00 ,  G21G5/00

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/3045

    Abstract: A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.

    Abstract translation: 一种用于产生能量带电粒子的多个子束的多光束源。 多光束源包括产生带电粒子的照明光束的照明系统，以及沿着光束的方向被布置在照明系统之后的束形成系统，适于在多个远心或同心圆的子束之外形成 照明光束。 束形成系统包括分光器和电区装置，电区具有由多个基本上平面的部分电极组成的复合电极，其适于施加不同的静电电势并因此影响子束。

    Optimized curvilinear variable axis lens doublet for charged particle beam projection system
    8.
    发明授权
    Optimized curvilinear variable axis lens doublet for charged particle beam projection system 失效
    用于带电粒子束投影系统的优化曲线可变轴透镜双峰

    公开(公告)号：US06617585B1

    公开(公告)日：2003-09-09

    申请号：US09577475

    申请日：2000-05-24

    Applicant: Werner Stickel

    Inventor： Werner Stickel

    IPC: H01J3709

    CPC classification number: H01J37/141 ,  H01J9/00 ,  H01J2237/04922 ,  H01J2237/04928 ,  H01J2237/1405 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/31777

    Abstract: This is a method for designing an optimized charged particle beam projection system. Specify lens configuration and first order optics. Calculate lens excitations. Configure the lens system, providing lens field distributions, beam landing angle, and imaging ray/axis cross-over. Provide an input deflector configuration. Solve a linear equation set, and thereby provide a curvilinear axis and associated deflection field distributions. Calculate the third order aberration coefficients yielding a list of up to 54 aberration coefficients. Provide an input of dynamic correctors. Calculate excitations to eliminate quadratic aberrations in deflection. Calculate third and fifth order aberrations, providing image blur and distortion vs. deflection, best focal plane, and depth of focus. Determine whether the current result is better than the previous result. If YES then change the axial location input to the solve linear equation set. If NO, test whether the current result is acceptable. If NO, provide a deflector configuration. If YES, test whether the deflection current is larger. If YES, change the input for the axial location of the deflectors to solve the linear equation set again. If NO then END the process.

    Abstract translation: 这是设计优化的带电粒子束投影系统的方法。 指定镜头配置和一阶光学。 计算镜头激发。 配置镜头系统，提供镜头场分布，光束着陆角度和成像光线/轴交叉。 提供输入偏转器配置。 求解线性方程组，从而提供曲线轴和相关的偏转场分布。 计算三阶像差系数，得到最多54个像差系数的列表。 提供动态校正器的输入。 计算激发以消除偏转中的二次像差。 计算第三和第五阶像差，提供图像模糊和失真与偏转，最佳焦平面和焦深。 确定当前结果是否比以前的结果更好。 如果是，则将轴向位置输入改为求解线性方程组。 如果否，则检查当前结果是否可以接受。 如果否，请提供偏转器配置。 如果是，则检查偏转电流是否较大。 如果是，则更改偏转器的轴向位置的输入，以再次求解线性方程组。 如果否，则END过程。

    Curvilinear variable axis lens correction with crossed coils
    9.
    发明授权
    Curvilinear variable axis lens correction with crossed coils 失效
    带交叉线圈的曲线可变轴透镜校正

    公开(公告)号：US5708274A

    公开(公告)日：1998-01-13

    申请号：US769084

    申请日：1996-12-18

    Applicant: Guenther O. Langner ,  Werner Stickel

    Inventor： Guenther O. Langner ,  Werner Stickel

    IPC: H01J37/141 ,  H01J37/153 ,  H01J37/14

    CPC classification number: H01J37/153 ,  H01J37/141 ,  H01J2237/04922 ,  H01J2237/04928

    Abstract: A charged particle lens has an axis that is shifted to follow the central ray of the beam as it is deflected through the lens creating, in effect, a variable curvilinear optical axis for the lens and introducing aberrations having depending on the object size and the distance off the lens symmetry axis. These aberrations are corrected by a set of coil pairs tilted with respect to the system axis, which generate compensating aberrations of the same type.

    Abstract translation: 带电粒子透镜具有在被偏转穿过透镜时沿着光束的中心光线移动的轴，实际上产生用于透镜的可变曲线光轴并引入具有取决于物体尺寸和距离的像差 离开镜头对称轴。 这些像差由相对于系统轴倾斜的一组线圈对来校正，这产生相同类型的补偿像差。

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