公开(公告)号：US5712488A

公开(公告)日：1998-01-27

申请号：US725665

申请日：1996-10-01

Applicant: Werner Stickel ,  Christopher Frederick Robinson

Inventor： Werner Stickel ,  Christopher Frederick Robinson

IPC: H01J37/304

CPC classification number: H01J37/3174 ,  H01J37/304 ,  H01J2237/30433 ,  H01J2237/3175

Abstract: A electron beam performance measurement system includes an electron beam generator device for producing an electron beam, a test reticle having a series of openings forming a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the electron beam through the pattern openings of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern openings. Beam current detector records and measures the amount of beam current that is absorbed on, back-scattered from, or transmitted by the target reference, and determines from the measured beam current the accuracy of the projection system.

Abstract translation: 电子束性能测量系统包括用于产生电子束的电子束发生器装置，具有形成图案的一系列开口的测试掩模版，还原投影成像装置，具有与测试掩模版基本相同的图案的参考靶，以及 光束电流检测器。 通过使电子束通过测试掩模版的图案开口而产生图案化的光束。 图案化的光束被还原投影成像装置减小和投射，并且缩小的图案化光束被成像到参考目标上。 缩小的图案化的光束然后暴露于参考目标，其中一些光束可以通过参考目标图案开口。 光束电流检测器记录并测量由目标基准吸收，反向散射或透射的束电流量，并根据测量的束电流确定投影系统的精度。

公开(公告)号：US5466904A

公开(公告)日：1995-11-14

申请号：US173305

申请日：1993-12-23

Applicant: Hans C. Pfeiffer ,  Werner Stickel

Inventor： Hans C. Pfeiffer ,  Werner Stickel

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  B23K15/08 ,  H01J37/147 ,  H01J37/305

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31776 ,  H01J2237/31788

Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

Abstract translation: 用于直接写入应用的电子束系统将投影系统的平行吞吐量与探针形成系统的缝合能力结合起来使用电子枪来均匀地照射初始孔径，第一组可控制的偏转器将光束扫过光罩 平行于系统轴线，在每个曝光中压印掩模版的子场的图案，其中第一可变轴透镜将初始孔径的图像聚焦在光罩上，第二可变轴透镜准直图案化的光束，第二组 的可控偏转器将光束返回到晶片上方的适当位置，以及第三可变轴透镜，以将校准子子场的图像与校正元件一起聚焦在晶片上，以施加可随每个子场变化的像差校正，从而 从使用具有低像差特征的每个子场的107个像素的并行处理提供高吞吐量 可变轴透镜和能够定制与高斯系统相关联的位置相关校正的能力，其逐像素地编码图像。

公开(公告)号：US5285074A

公开(公告)日：1994-02-08

申请号：US893172

申请日：1992-06-03

Applicant: Don F. Haire ,  Cecil T. Ho ,  Guenther O. Langner ,  Werner Stickel ,  Edward V. Weber

Inventor： Don F. Haire ,  Cecil T. Ho ,  Guenther O. Langner ,  Werner Stickel ,  Edward V. Weber

IPC: G09G1/00 ,  G09G1/04 ,  H01J29/70 ,  H01J37/147 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  H04N3/16

CPC classification number: H01J37/304 ,  H01J2237/04928 ,  H01J2237/1507 ,  H01J2237/153 ,  H01J2237/30461 ,  H01J2237/3175

Abstract: A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.

Abstract translation: 电子束投影/偏转系统的动态校正装置根据校正方程为偏转提供高阶校正值。 特别是应用于高精度远心偏转时，校正方程的项的系数可以通过少量测试点的校准来确定。 校正值可以存储在查找表中或通过在处理流水线中使用数学协处理器实时计算。 该校正提供了在诸如利用可变轴浸没透镜的系统的远心投影/偏转系统中通过第三级校正着陆角误差。

公开(公告)号：US06596999B2

公开(公告)日：2003-07-22

申请号：US09986176

申请日：2001-11-07

Applicant: Steven D. Golladay ,  Michael S. Gordon ,  Rodney A. Kendall ,  Shinichi Kojima ,  Werner Stickel

Inventor： Steven D. Golladay ,  Michael S. Gordon ,  Rodney A. Kendall ,  Shinichi Kojima ,  Werner Stickel

IPC: H01J3730

CPC classification number: H01J37/07

Abstract: The presence of magnetic fields from lenses and other (e.g. parasitic) sources at locations in a charged particle beam system such as the charged particle emitter, where the particles have little or no kinetic energy, creates disturbances of the charged particle trajectories, generating undesired angular momentum and resulting in excessive aberrations and associated adverse effects on system performance. Solutions are provided by suppression of these magnetic fields, by relocating the charged particle emitter away from the field source and/or counterbalancing the field with a bucking field. In addition, residual irrepressible field asymmetries are compensated by a suitable element such as a stigmator located at the correct location in the beam path, permitted by relocation of the charged particle emitter.

公开(公告)号：US5936252A

公开(公告)日：1999-08-10

申请号：US936353

申请日：1997-09-24

Applicant: Werner Stickel ,  Christopher Frederick Robinson

Inventor： Werner Stickel ,  Christopher Frederick Robinson

IPC: H01J37/304

CPC classification number: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30433 ,  H01J2237/3175

Abstract: A charged particle beam performance measurement system includes a charged particle beam generator device for producing a charged particle beam, a test reticle having at least two areas of higher transparency than its surroundings that form a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the charged particle beam through the pattern areas of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern areas. Beam current detector records and measures the amount of beam current that is absorbed on, back-scattered from, or transmitted by the target reference, and determines from the measured beam current the accuracy of the projection system.

Abstract translation: 带电粒子束性能测量系统包括用于产生带电粒子束的带电粒子束发生器装置，具有至少两个比其形成图案的周围具有更高透明度的区域的测试掩模版，还原投影成像装置，具有 与测试掩模版基本相同的图案，以及光束电流检测器。 通过使带电粒子束通过测试掩模版的图案区域来产生图案化的束。 图案化的光束被还原投影成像装置减小和投射，并且缩小的图案化光束被成像到参考目标上。 然后将经缩小的图案化的光束暴露于参考目标，其中一些光束可以通过参考目标图案区域。 光束电流检测器记录并测量由目标基准吸收，反向散射或透射的束电流量，并根据测量的束电流确定投影系统的精度。

公开(公告)号：US4737644A

公开(公告)日：1988-04-12

申请号：US793046

申请日：1985-10-30

Applicant: Douglas G. Cullum ,  George J. Giuffre ,  Timothy R. Groves ,  Werner Stickel ,  Maris A. Sturans

Inventor： Douglas G. Cullum ,  George J. Giuffre ,  Timothy R. Groves ,  Werner Stickel ,  Maris A. Sturans

IPC: B41J2/085 ,  H01J3/30 ,  H01J29/74 ,  H01J37/147 ,  H01J3/14

CPC classification number: H01J37/1477 ,  B41J2/085 ,  H01J3/30

Abstract: An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive layers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.

Abstract translation: 用于带电粒子束系统的静电偏转板由在基板表面具有导电区域的平面半导体基板形成。 导电区域被扩散或注入到衬底的主体中，或者一个或多个导电层沉积在衬底表面上。 基底材料优选为硅，并且扩散或注入的区域由非磁性，不可氧化的金属如金或铂形成。 沉积的导电区域可以由这些或类似金属的单层形成，一个或多个具有非磁性，不可氧化覆盖层的导电底层，在最外层具有导电氧化物的单层或多层结构或金属有机化合物， 在随后的热处理期间形成导电层。 偏转板使用传统的半导体工艺制造，并形成耐久结构，使涡流效应最小化。

公开(公告)号：US4417203A

公开(公告)日：1983-11-22

申请号：US267119

申请日：1981-05-26

Applicant: Hans C. Pfeiffer ,  Robert A. Simpson ,  Werner Stickel

Inventor： Hans C. Pfeiffer ,  Robert A. Simpson ,  Werner Stickel

IPC: H01L21/66 ,  G01Q30/02 ,  G01R31/02 ,  G01R31/302 ,  G01R31/305 ,  H05K3/46

CPC classification number: B82Y15/00 ,  G01R31/305

Abstract: An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.

Abstract translation: 用于非接触测试的电子束系统，用于嵌入介质材料的导体的三维网络，特别是开路和短路条件的检测。 从顶部到底部以及顶部到顶部的表面布线都进行电气测试，而不会进行物理电气接触。 该系统包括两个横梁和一个焦点探针光束，一个位于样品两侧的一个放射束。 正确选择加速电位，光束电流和停留时间可以改变样品的二次电子发射，从而可以直接测量导体网络的电气特性。 由不同表面电位产生的二次电子发射的差异被检测为强信号，其允许清晰地区分不间断的和中断的以及短路导体对。 该测试系统可以应用于高级VLSI封装基板的高速测试以及制造它们的绿色薄片，亚层压板和层压板。

公开(公告)号：US06541783B1

公开(公告)日：2003-04-01

申请号：US09321858

申请日：1999-05-28

Applicant: Christopher F. Robinson ,  Werner Stickel

Inventor： Christopher F. Robinson ,  Werner Stickel

IPC: H01J3709

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31794

Abstract: Proximity (exposure dose) effects and/or local Coulomb (space charge defocussing) effects, both dependent on local pattern density of exposed areas, are simultaneously compensated in a charged particle beam projection device or tool by a projection reticle having an apertured weakly scattering membrane with selective strongly scattering regions between the apertures in the membrane. A reticle so constructed provides at least three independent exposure dosage levels that can be mixed to provide a wide range of exposure levels with high contrast. The more weakly the electrons are scattered (in the extreme, the electrons are not scattered at all through apertures), the greater the number that pass through a given beam contrast aperture, the higher the corresponding dose received at the target plane and the more space charge is contained in the beam bundle. Therefore, to compensate for the proximity effect (i.e. provide dose boost) and the local Coulomb effect (i.e. provide additional space charge) regions with reduced scattering characteristics are employed. Use of a hybrid doped resist allows exposure corresponding to an intermediate exposure dose in a preferred variant implementation exploiting the three dosage levels developed.

Abstract translation: 两者均取决于暴露区域的局部图案密度，接近（曝光剂量）效应和/或局部库仑（空间电荷偏聚）效应在带电粒子束投影装置或工具中通过具有多孔弱散射膜的投影掩模 在膜中的孔之间具有选择性强散射区域。 如此构造的掩模版提供至少三种独立的暴露剂量水平，其可以混合以提供具有高对比度的宽范围的暴露水平。 电子散射越弱（在极端情况下，电子根本不通过孔径散射），通过给定光束对比孔径的数量越大，在目标平面上接收的相应剂量越高，空间越大 电荷束包含在束束中。 因此，为了补偿邻近效应（即提供剂量增强）和采用具有降低的散射特性的局部库仑效应（即提供额外的空间电荷）区域。 混合掺杂抗蚀剂的使用允许在利用所开发的三种剂量水平的优选变体实施方案中对应于中间暴露剂量的暴露。

公开(公告)号：US06180947B2

公开(公告)日：2001-01-30

申请号：US09131113

申请日：1998-08-07

Applicant: Werner Stickel ,  Michael S. Gordon ,  Hans C. Pfeiffer ,  Steven D. Golladay

Inventor： Werner Stickel ,  Michael S. Gordon ,  Hans C. Pfeiffer ,  Steven D. Golladay

IPC: H01J3714

CPC classification number: H01J37/153 ,  H01J37/304 ,  H01J2237/3045 ,  H01J2237/3175

Abstract: A method of optimizing locations of correction elements of a charged particle beam system determines respective corrector element currents to achieve optimum correction as a function of individual corrector location. Substantially complete dynamic correction of FSD and SFD can be obtained consistent with efficiency of operation and minimization of deflection distortion. In particular, FSD and SFD corrections can be sufficiently separated for substantially complete correction of SFD and FSD simultaneously with two stigmators. Both of these types of correction can be provided in complex charged particle beam systems employing curvilinear axis (CVA) particle trajectories and or large area reduction projection optics (LARPO) which cause complex hybrid aberrations in order to achieve high throughput consistent with extremely high resolution supporting one-tenth micron minimum feature size lithography regimes and smaller.

Abstract translation: 优化带电粒子束系统的校正元件的位置的方法确定各个校正元件电流，以实现作为单独校正器位置的函数的最佳校正。 可以根据操作效率和偏转失真最小化，实现FSD和SFD的基本完整的动态校正。 特别地，FSD和SFD校正可以被充分地分离，以便与两个施放器同时进行SFD和FSD的基本上完全的校正。 这些类型的校正可以在使用曲线轴（CVA）粒子轨迹和或大面积减小投影光学（LARPO）的复杂带电粒子束系统中提供，其导致复杂的混合像差，以实现与极高分辨率支持一致的高通量 十分之一微米的最小特征尺寸光刻方案和更小。

公开(公告)号：US5798528A

公开(公告)日：1998-08-25

申请号：US814211

申请日：1997-03-11

Applicant: Rainer Butsch ,  John George Hartley ,  Werner Stickel

Inventor： Rainer Butsch ,  John George Hartley ,  Werner Stickel

IPC: H01J37/304 ,  H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/30433 ,  H01J2237/30444

Abstract: A method is disclosed for improving the electron beam apparatus lithography process wherein the calibration procedure for the apparatus is improved by using the product pattern and stepping sequence used to make the mask on a calibration plate and/or calibration grid and to determine improved apparatus correction errors which errors are used to control the apparatus for making an improved mask. The well-known EMULATION procedure is improved by calculating additional field correction errors based on a two step registration procedure to determine X/Y apparatus stepping errors. The LEARN procedure based on a static calibration grid procedure is improved by employing the duty cycle of the product pattern to calibrate the apparatus to determine deflection beam errors.

Abstract translation: 公开了一种用于改进电子束装置光刻处理的方法，其中通过使用产品图案和用于在校准板和/或校准网格上制作掩模的步进顺序来改进装置的校准程序，并且确定改进的装置校正误差 哪些错误用于控制用于制造改进掩模的装置。 通过基于两步注册过程来计算附加的场校正误差来确定X / Y设备的步进误差来改进众所周知的仿真程序。 基于静态校准网格程序的LEARN程序通过采用产品图案的占空比校准装置来确定偏转光束误差得到改进。