METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING MOIRÉ PATTERNS

    公开(公告)号:US20230152715A1

    公开(公告)日:2023-05-18

    申请号:US17982761

    申请日:2022-11-08

    IPC分类号: G03F7/20 G01N21/95 H01L23/544

    摘要: A method for manufacturing a semiconductor device may include: forming a first layer comprising a plurality of patterns, each pattern having a different respective pitch; performing exposure and development to form a second layer at a layer different from the first layer; determining whether a pitch shift of a part of exposure patterns formed is within a tolerance range, using a Moire pattern; and performing etching for the second layer when the pitch shift of the part of exposure patterns is determined to be within the tolerance range. Performing the exposure and the development may include forming a first exposure pattern corresponding to a key pattern having a first pitch, forming a second exposure pattern corresponding to a cell pattern having a second pitch, and forming a third exposure pattern corresponding to a middle pitch pattern having a third pitch between the first pitch and the second pitch.

    Blade for Substrate Edge Protection During Photolithography
    5.
    发明申请
    Blade for Substrate Edge Protection During Photolithography 审中-公开
    用于光刻底片边缘保护的刀片

    公开(公告)号:US20150234281A1

    公开(公告)日:2015-08-20

    申请号:US14433194

    申请日:2013-10-02

    IPC分类号: G03F7/20

    摘要: An apparatus protects a portion of a peripheral region (310) of a photoresist-coated surface of a substrate (308) from light exposure. The apparatus includes a blade (502, 512, 522, 532) that can move, or that can move and rotate, and a drive assembly (504, 514, 524, 534) operably coupled to the blade. In response to at least one first drive force generated by the drive assembly, the blade translates, rotates, or translates and rotates, such that the blade is disposed above a portion of the peripheral region. In response to at least one second drive force generated by the drive assembly, the blade translates, rotates, or rotates and translates, such that the blade is not disposed above a portion of the peripheral region. In a step-and-repeat lithographic system, the blade covers a portion of the peripheral region, and the adjacent portion of the substrate is exposed to light.

    摘要翻译: 一种装置保护基底(308)的光致抗蚀剂涂覆的表面的周边区域(310)的一部分免受光照射。 该装置包括可移动或可以移动和旋转的叶片(502,512,522,532)以及可操作地联接到叶片的驱动组件(504,514,524,534)。 响应于由驱动组件产生的至少一个第一驱动力,叶片平移,旋转或平移和旋转,使得叶片设置在周边区域的一部分上方。 响应于由驱动组件产生的至少一个第二驱动力,叶片平移,旋转或旋转和平移,使得叶片不设置在周边区域的一部分上方。 在步进重复平版印刷系统中,刀片覆盖周边区域的一部分,并且衬底的相邻部分暴露于光。

    Reflective film interface to restore transverse magnetic wave contrast in lithographic processing
    7.
    发明授权
    Reflective film interface to restore transverse magnetic wave contrast in lithographic processing 有权
    反光膜界面,以恢复光刻处理中的横向磁波对比度

    公开(公告)号:US08867024B2

    公开(公告)日:2014-10-21

    申请号:US13324092

    申请日:2011-12-13

    IPC分类号: G03F7/20

    CPC分类号: G03F7/70216

    摘要: A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

    摘要翻译: 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上,其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂,以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分,并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性,改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

    METHOD OF AND APPARATUS FOR IN-SITU REPAIR OF REFLECTIVE OPTIC
    8.
    发明申请
    METHOD OF AND APPARATUS FOR IN-SITU REPAIR OF REFLECTIVE OPTIC 审中-公开
    反射光学现场修复方法与装置

    公开(公告)号:US20140102881A1

    公开(公告)日:2014-04-17

    申请号:US13650778

    申请日:2012-10-12

    申请人: CYMER INC.

    IPC分类号: B44C1/22 B32B43/00

    摘要: Method of and apparatus for repairing an optical element disposed in a vacuum chamber while the optical element is in the vacuum chamber. An exposed surface of the optical element is exposed to an ion flux generated by an ion source to remove at least some areas of the surface that have been damaged by exposure to the environment within the vacuum chamber. The method and apparatus are especially applicable to repair multilayer mirrors serving as collectors in systems for generating EUV light for use in semiconductor photolithography.

    摘要翻译: 在光学元件位于真空室中时修复设置在真空室中的光学元件的方法和装置。 光学元件的暴露表面暴露于由离子源产生的离子通量,以去除通过暴露于真空室内的环境而损坏的表面的至少一些区域。 该方法和装置特别适用于在用于生成用于半导体光刻中的EUV光的系统中用作收集器的多层反射镜。

    Method for correcting a lithography projection objective, and such a projection objective
    9.
    发明授权
    Method for correcting a lithography projection objective, and such a projection objective 有权
    用于校正光刻投影物镜的方法和这种投影物镜

    公开(公告)号:US08659744B2

    公开(公告)日:2014-02-25

    申请号:US13440226

    申请日:2012-04-05

    IPC分类号: G03B27/70 G03B27/52 G03F7/20

    摘要: A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

    摘要翻译: 一种用于校正光刻投影曝光机的投影物镜的至少一个图像缺陷的方法,所述投影物镜包括由多个透镜和至少一个反射镜组成的光学装置,所述至少一个反射镜具有光学操作表面, 可能是有缺陷的并且因此对至少一个图像缺陷负责,包括以下步骤:至少近似地确定主光线高度hMH与至少一个反射镜的光学操作表面处的边缘光线高度hMR的比率VM, 至少近似地确定透镜的透镜表面中的至少一个光学透镜表面,其中主光线高度hLH与边缘光线高度hLR的比值VL的大小至少最接近于比率VM,并且至少选择至少 用于校正图像缺陷的一个确定的透镜表面。

    Reflective mask for EUV lithography
    10.
    发明授权
    Reflective mask for EUV lithography 有权
    EUV光刻用反光罩

    公开(公告)号:US08486590B2

    公开(公告)日:2013-07-16

    申请号:US13526472

    申请日:2012-06-18

    IPC分类号: G03F1/24

    摘要: To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography having a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured such that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.

    摘要翻译: 鉴于其高反射率,为了改进EUV光刻设备的掩模,建议用于EUV光刻的反射掩模,其在被配置用于EUV范围中的工作波长的衬底上具有反射多层系统,并且具有至少两层的层 在工作波长处具有不同实际折射率部分的材料,其中多层体系(V)被配置为使得当被固定波长的EUV辐射和最小和最大入射角之间的角度间隔照射时 高达21°,变迹小于30%。