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公开(公告)号：US11281090B2
公开(公告)日：2022-03-22
申请号：US16754306
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki , Yohei Ikebe
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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公开(公告)号：US11262647B2
公开(公告)日：2022-03-01
申请号：US16756727
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US10996554B2
公开(公告)日：2021-05-04
申请号：US16796395
申请日：2020-02-20
Applicant: HOYA CORPORATION
Inventor： Takumi Kobayashi , Kazuhiro Hamamoto , Tatsuo Asakawa , Tsutomu Shoki
Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
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公开(公告)号：US10606166B2
公开(公告)日：2020-03-31
申请号：US15580331
申请日：2016-06-08
Applicant: HOYA CORPORATION
Inventor： Takumi Kobayashi , Kazuhiro Hamamoto , Tatsuo Asakawa , Tsutomu Shoki
Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
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公开(公告)号：US10295900B2
公开(公告)日：2019-05-21
申请号：US15980783
申请日：2018-05-16
Applicant: HOYA CORPORATION
Inventor： Toshihiko Orihara , Kazuhiro Hamamoto , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
IPC: G03F1/22 , G03F1/48 , C03C3/06 , G02B5/08 , G03F7/16 , G03F7/20 , B82Y10/00 , B82Y40/00 , C03C17/34 , C03C17/36 , C03C23/00 , H01L21/308
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
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Patent Agency Ranking
6.发明授权Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device 有权反光掩模板及其制造方法，反射掩模的制造方法以及半导体装置的制造方法公开(公告)号：US09535318B2
公开(公告)日：2017-01-03
申请号：US15179030
申请日：2016-06-10
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tatsuo Asakawa , Osamu Maruyama , Tsutomu Shoki
Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。
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公开(公告)号：US20220146925A1
公开(公告)日：2022-05-12
申请号：US17581590
申请日：2022-01-21
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US10025176B2
公开(公告)日：2018-07-17
申请号：US15417846
申请日：2017-01-27
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Toshihiko Orihara , Tsutomu Shoki , Junichi Horikawa
Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.
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公开(公告)号：US09798050B2
公开(公告)日：2017-10-24
申请号：US14901575
申请日：2014-09-25
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Toshihiko Orihara
IPC: G03B27/32 , G02B5/08 , G03F1/24 , G02B5/26 , G02B5/28 , G03F1/52 , G03F1/84 , G03F7/20 , G02B1/14 , G02B5/00
CPC classification number: G02B5/0816 , G02B1/14 , G02B5/003 , G02B5/0891 , G02B5/26 , G02B5/285 , G03F1/24 , G03F1/52 , G03F1/84 , G03F7/70216
Abstract: A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10−3 nm3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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10.发明授权Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device 有权反光掩模板及其制造方法，反射掩模的制造方法以及半导体装置的制造方法公开(公告)号：US09377679B2
公开(公告)日：2016-06-28
申请号：US14418629
申请日：2013-07-27
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tatsuo Asakawa , Osamu Maruyama , Tsutomu Shoki
Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。
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