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    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
    3.
    发明申请
    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权
    掩模基板，多层反射膜基板，传输掩模空白，反射掩模，传输掩模，反射掩模和半导体器件制造方法

    公开(公告)号：US20140329174A1

    公开(公告)日：2014-11-06

    申请号：US14348349

    申请日：2013-03-28

    申请人： HOYA CORPORATION

    发明人： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

    IPC分类号： G03F1/50

    CPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

    摘要： Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

    摘要翻译： 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。