公开(公告)号：US12105413B2

公开(公告)日：2024-10-01

申请号：US18483484

申请日：2023-10-09

申请人： HOYA CORPORATION

发明人： Yohei Ikebe ,  Tsutomu Shoki

IPC分类号： G03F1/32 ,  G03F1/24

CPC分类号： G03F1/32 ,  G03F1/24

摘要： Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US11681214B2

公开(公告)日：2023-06-20

申请号：US17581590

申请日：2022-01-21

申请人： HOYA CORPORATION

发明人： Kazuhiro Hamamoto ,  Tsutomu Shoki

IPC分类号： G03F1/24 ,  G03F1/42 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/42 ,  G03F7/2004

摘要： A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

公开(公告)号：US11561463B2

公开(公告)日：2023-01-24

申请号：US16955734

申请日：2018-12-21

申请人： HOYA CORPORATION

发明人： Masanori Nakagawa ,  Tsutomu Shoki

IPC分类号： G03F1/24 ,  G03F1/58 ,  H01L21/033

摘要： A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.

公开(公告)号：US11550215B2

公开(公告)日：2023-01-10

申请号：US17056676

申请日：2019-05-24

申请人： HOYA CORPORATION

发明人： Yohei Ikebe ,  Tsutomu Shoki

IPC分类号： G03F1/32 ,  G03F1/24

摘要： Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US11131921B2

公开(公告)日：2021-09-28

申请号：US16054295

申请日：2018-08-03

申请人： HOYA CORPORATION

发明人： Tsutomu Shoki ,  Kazuhiro Hamamoto ,  Yohei Ikebe

IPC分类号： C23C14/02 ,  C23C14/35 ,  C23C14/46 ,  G03F1/24 ,  G03F1/38 ,  G03F1/84 ,  G06T7/00

摘要： A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

公开(公告)号：US11003068B2

公开(公告)日：2021-05-11

申请号：US16490018

申请日：2018-02-20

申请人： HOYA CORPORATION

发明人： Yohei Ikebe ,  Tsutomu Shoki ,  Takahiro Onoue ,  Hirofumi Kozakai

IPC分类号： G03F1/24 ,  G03F1/26

摘要： Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US10347485B2

公开(公告)日：2019-07-09

申请号：US15508544

申请日：2015-09-14

申请人： HOYA CORPORATION

发明人： Tsutomu Shoki ,  Tatsuo Asakawa ,  Hirofumi Kozakai

IPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/76 ,  G03F1/80 ,  G03F1/86 ,  G03F7/20 ,  C23C14/18 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/35

摘要： The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

公开(公告)号：US09897909B2

公开(公告)日：2018-02-20

申请号：US15134776

申请日：2016-04-21

申请人： HOYA CORPORATION

发明人： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/20 ,  H01L21/033

CPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

摘要： Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US09726969B2

公开(公告)日：2017-08-08

申请号：US14787532

申请日：2014-08-29

申请人： HOYA CORPORATION

发明人： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC分类号： G03F1/24 ,  G03F1/50 ,  G03F1/84 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/84 ,  G03F7/2004

摘要： A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 μm×1 μm region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70−BA30)/(BD70−BD30)≧60(%/nm) and maximum height (Rmax)≦4.5 nm.

公开(公告)号：US09348217B2

公开(公告)日：2016-05-24

申请号：US14348349

申请日：2013-03-28

申请人： HOYA CORPORATION

发明人： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC分类号： G03F1/50 ,  G03F1/22 ,  G03F1/60

CPC分类号： G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

摘要： Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

摘要翻译： 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。