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公开(公告)号：US10921705B2
公开(公告)日：2021-02-16
申请号：US15778363
申请日：2016-11-15
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
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2.发明授权公开(公告)号：US10067419B2
公开(公告)日：2018-09-04
申请号：US14768787
申请日：2014-02-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Kazuhiro Hamamoto , Yohei Ikebe
CPC classification number: G03F1/84 , C23C14/35 , C23C14/46 , G03F1/24 , G03F1/38 , G06T7/0004 , G06T2207/30148 , G06T2207/30204
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
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公开(公告)号：US11815807B2
公开(公告)日：2023-11-14
申请号：US17990163
申请日：2022-11-18
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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公开(公告)号：US11249385B2
公开(公告)日：2022-02-15
申请号：US16477771
申请日：2018-01-16
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided are a reflective mask blank and a reflective mask that are capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank has a multilayer reflective film and a phase shift film that causes a shift in the phase of EUV light on a substrate in that order, wherein the phase shift film comprises a single layer film or multilayer film of two or more layers and is made of a material comprising tantalum (Ta) and titanium (Ti).
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公开(公告)号：US12111566B2
公开(公告)日：2024-10-08
申请号：US18483453
申请日：2023-10-09
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
CPC classification number: G03F1/32 , G03F1/24 , G03F7/2004
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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Patent Agency Ranking
6.发明授权公开(公告)号：US11914281B2
公开(公告)日：2024-02-27
申请号：US17311662
申请日：2019-12-23
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe
Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
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公开(公告)号：US11880130B2
公开(公告)日：2024-01-23
申请号：US17946709
申请日：2022-09-16
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US11815806B2
公开(公告)日：2023-11-14
申请号：US17990049
申请日：2022-11-18
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
CPC classification number: G03F1/32 , G03F1/24 , G03F7/2004
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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公开(公告)号：US11281090B2
公开(公告)日：2022-03-22
申请号：US16754306
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki , Yohei Ikebe
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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公开(公告)号：US11187972B2
公开(公告)日：2021-11-30
申请号：US16343505
申请日：2017-10-18
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
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