Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
    1.
    发明授权
    Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device 有权
    反光掩模板及其制造方法,反射掩模的制造方法以及半导体装置的制造方法

    公开(公告)号:US09535318B2

    公开(公告)日:2017-01-03

    申请号:US15179030

    申请日:2016-06-10

    CPC classification number: G03F1/24 G03F1/48

    Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

    Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜,保护膜,吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L(ML),则从基板的中心到保护膜的外周端的距离为L(Cap), 从基板的中心到吸收膜的外周端的距离为L(Abs),并且从基板的中心到抗蚀剂膜的外周端的距离为L(Res),L (Ab)> L(Res)> L(Cap)≥L(ML),并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

    Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
    2.
    发明授权
    Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device 有权
    反光掩模板及其制造方法,反射掩模的制造方法以及半导体装置的制造方法

    公开(公告)号:US09377679B2

    公开(公告)日:2016-06-28

    申请号:US14418629

    申请日:2013-07-27

    CPC classification number: G03F1/24 G03F1/48

    Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

    Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜,保护膜,吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L(ML),则从基板的中心到保护膜的外周端的距离为L(Cap), 从基板的中心到吸收膜的外周端的距离为L(Abs),并且从基板的中心到抗蚀剂膜的外周端的距离为L(Res),L (Ab)> L(Res)> L(Cap)≥L(ML),并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

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