公开(公告)号：US20070099122A1

公开(公告)日：2007-05-03

申请号：US11265822

申请日：2005-11-03

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan Rosenbluth

IPC分类号： G03F7/20

CPC分类号： G03F7/70216

摘要： A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层暴露于对图像的光敏感区域的方法和系统。 采用具有反射成像工具辐射的层的基板和在反射层上具有光敏区域的抗蚀剂层，抗蚀剂层具有厚度。 成像工具适于将含有空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂层并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除干涉图形的较低对比度部分 从抗蚀剂层区域的光敏剂厚度方向的图案，以提高光敏层的所述抗蚀剂层区域中的空间图像的对比度。

公开(公告)号：US20050177810A1

公开(公告)日：2005-08-11

申请号：US10776901

申请日：2004-02-10

申请人： Fook-Luen Heng ,  Mark Lavin ,  Jin-Fuw Lee ,  Daniel Ostapko ,  Alan Rosenbluth ,  Nakgeuon Seong

发明人： Fook-Luen Heng ,  Mark Lavin ,  Jin-Fuw Lee ,  Daniel Ostapko ,  Alan Rosenbluth ,  Nakgeuon Seong

IPC分类号： G03F1/14 ,  G03F7/20 ,  G06F17/50 ,  H01L21/00

CPC分类号： G03F1/36

摘要： A novel method and system for layout optimization relative to lithographic process windows which facilitates lithographic constraints to be non-localized in order to impart a capability of printing a given circuit with a process window beyond the process windows which are attainable with conventional simplified design rules.

摘要翻译： 一种用于相对于光刻工艺窗口的布局优化的新颖方法和系统，其有助于光刻约束被非局部化，以便赋予给定电路打印超过可以​​用常规简化设计规则达到的过程窗口的处理窗口的能力。

公开(公告)号：US20050122501A1

公开(公告)日：2005-06-09

申请号：US10727901

申请日：2003-12-04

申请人： Alan Rosenbluth

发明人： Alan Rosenbluth

IPC分类号： G03F7/20 ,  G03B27/72 ,  H01L21/027

CPC分类号： G03F7/70125

摘要： Disclosed is a method for illuminating a lithographic mask with light from different directions, in such a way that the intensities of the various incident beams provide the largest possible integrated process window. The process window is defined in terms of allowable ranges for printed shapes. For example, boundaries of the process window may be defined by shape limits corresponding to underexposed and overexposed conditions. Intensity parameters for representing the maximum possible intensities that can be permitted for overexposed tolerance positions are imposed through application of various constraints. Another set of intensity parameters for representing the minimum possible intensities that can be permitted for underexposed tolerance positions are imposed through application of various constraints. One parameter of each kind is defined for each of a number of different focal ranges. The optimum source intensities are determined from a linear program involving these and other constraints. The determined source intensities maximize the integrated range of dose and focal variations that can be tolerated without causing the printed shapes to depart from the allowed range of shapes.

摘要翻译： 公开了一种利用来自不同方向的光照射光刻掩模的方法，使得各种入射光束的强度提供最大的可能的整合过程窗口。 过程窗口根据打印形状的允许范围进行定义。 例如，过程窗口的边界可以由对应于曝光不足和曝光过度的条件的形状限制来定义。 通过应用各种约束来强加用于表示可能允许暴露过度的公差位置的最大可能强度的强度参数。 通过应用各种约束来施加另一组强度参数，用于表示可以允许曝光不足位置的最小可能强度。 为各种不同的焦点范围中的每一个定义了每种类型的一个参数。 最优源强度由涉及这些和其他约束的线性程序确定。 确定的源强度使得可以容忍的剂量和焦点变化的积分范围最大化，而不会使印刷形状偏离允许的形状范围。

公开(公告)号：US20050091634A1

公开(公告)日：2005-04-28

申请号：US10694339

申请日：2003-10-27

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/82

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/5068

摘要： Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchal arrangement to ultimately correct for optical lithography.

摘要翻译： 方法和程序存储装置，用于通过将具有多个多边形的单元阵列布局划分成覆盖布局的多个单元来执行基于模型的光学光刻校正。 该布局代表了所需的设计数据层次结构。 然后根据多边形与多个单元之间的相互作用产生密度图，然后卷积每个单元内的密度。 使用卷积密度形成交互图，然后截断交互图以形成截断单元格的图。 截短的细胞的基本相同的分组然后分别分离成多个桶中的不同的桶，由此这些桶中的每一个都包含一组相同的截断细胞组。 使用这些存储桶生成层次排列，并且使用层级排列来强制执行所需的设计数据层级，以最终校正光学光刻。

公开(公告)号：US20080059939A1

公开(公告)日：2008-03-06

申请号：US11874274

申请日：2007-10-18

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

摘要翻译： 方法和用于执行这种方法的程序存储装置，用于通过提供具有感兴趣区域（ROI）的掩模矩阵并且在掩模矩阵内定位多个感兴趣点来执行基于模型的光学邻近校正。 计算具有代表所述定位的兴趣点的顶点数的第一多边形，然后确定其顶点和ROI之间的空间关系。 然后将第一多边形的顶点固定在ROI的边界和内部，使得在ROI上形成第二多边形。 对第一多边形的所有顶点重复该过程，使得第二多边形折叠到ROI上。 然后使用这个折叠的第二个多边形来校正光学接近度。

公开(公告)号：US20050287483A1

公开(公告)日：2005-12-29

申请号：US10710168

申请日：2004-06-23

申请人： Michael Lercel ,  Alan Rosenbluth ,  Nakgeuon Seong

发明人： Michael Lercel ,  Alan Rosenbluth ,  Nakgeuon Seong

IPC分类号： G03C5/00 ,  G03F1/14 ,  G03F7/20

CPC分类号： G03F7/70466 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70566

摘要： The present invention provides a lithographic method and apparatus (e.g., for printing contact holes on a wafer) that use a single mask, multiple exposures, and optimized pupil filtering. The method comprises: providing a mask including pattern features to be transferred to a wafer; transferring a first set of pattern features from the mask to the wafer using a first type of illumination and a first type of pupil filter; and transferring a second set of pattern features from the mask to the wafer using a second type of illumination and a second type of pupil filter.

摘要翻译： 本发明提供使用单个掩模，多次曝光和优化的光瞳过滤的光刻方法和装置（例如，用于印刷晶片上的接触孔）。 该方法包括：提供包括要传送到晶片的图案特征的掩模; 使用第一类型的照明和第一类型的光瞳滤光器将第一组图案特征从掩模转印到晶片; 以及使用第二类型的照明和第二类型的光瞳滤光器将第二组图案特征从掩模转移到晶片。

公开(公告)号：US20050185159A1

公开(公告)日：2005-08-25

申请号：US10783938

申请日：2004-02-20

申请人： Alan Rosenbluth ,  Gregg Gallatin ,  Ronald Gordon ,  Nakgeuon Seong ,  Alexey Lvov ,  William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

发明人： Alan Rosenbluth ,  Gregg Gallatin ,  Ronald Gordon ,  Nakgeuon Seong ,  Alexey Lvov ,  William Hinsberg ,  John Hoffnagle ,  Frances Houle ,  Martha Sanchez

IPC分类号： G03F1/08 ,  G03B27/54 ,  G03F7/20

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70441

摘要： An efficient method and system is provided for computing lithographic images that takes into account vector effects such as lens birefringence, resist stack effects and tailored source polarizations, and may also include blur effects of the mask and the resist. These effects are included by forming a generalized bilinear kernel, which is independent of the mask transmission function, which can then be treated using a decomposition to allow rapid computation of an image that includes such non-scalar effects. Dominant eigenfunctions of the generalized bilinear kernel can be used to pre-compute convolutions with possible polygon sectors. A mask transmission function can then be decomposed into polygon sectors, and weighted pre-images may be formed from a coherent sum of the pre-computed convolutions for the appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can then be used to perform model-based optical proximity correction (MBOPC).

摘要翻译： 提供了一种有效的方法和系统，用于计算光学图像，其考虑了诸如透镜双折射，抗蚀剂堆叠效应和定制的源极化的矢量效应，并且还可以包括掩模和抗蚀剂的模糊效果。 这些效果包括通过形成广义双线性核，其独立于掩模传递函数，其然后可以使用分解来处理，以允许快速计算包括这种非标量效应的图像。 广义双线性核的主要特征函数可用于预先计算可能的多边形扇区的卷积。 然后，掩模传输功能可以被分解成多边形扇区，并且加权预图像可以由针对适当的屏蔽多边形扇区的预先计算的卷积的相干和形成。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 然后，所得到的图像可用于执行基于模型的光学邻近校正（MBOPC）。

公开(公告)号：US20050091631A1

公开(公告)日：2005-04-28

申请号：US10694466

申请日：2003-10-27

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G03F1/08 ,  G03F1/14 ,  H01L21/027 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70

摘要： A method for calculating long-range image contributions from mask polygons. An algorithm is introduced having application to Optical Proximity Correction in optical lithography. A finite integral for each sector of a polygon replaces an infinite integral. Integrating over two triangles, rather than integrating on the full sector, achieves a finite integral. An analytical approach is presented for a power law kernel to reduce the numerical integration of a sector to an analytical expression evaluation. The mask polygon is divided into regions to calculate interaction effects, such as intermediate-range and long-range effects, by truncating the mask instead of truncating the kernel function.

摘要翻译： 一种用于从掩模多边形计算长距离图像贡献的方法。 引入了一种应用于光学光刻中的光学邻近校正的算法。 多边形的每个扇区的有限积分代替无限积分。 整合在两个三角形上，而不是整体上整合，实现了一个有限积分。 针对幂律内核提出了一种分析方法，以减少一个部门与分析表达式评估的数值整合。 掩模多边形被划分为区域，以通过截断掩码而不是截断内核函数来计算交互效应，例如中间范围和远程效果。

公开(公告)号：US20050091013A1

公开(公告)日：2005-04-28

申请号：US10694465

申请日：2003-10-27

申请人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

发明人： Gregg Gallatin ,  Emanuel Gofman ,  Kafai Lai ,  Mark Lavin ,  Maharaj Mukherjee ,  Dov Ramm ,  Alan Rosenbluth ,  Shlomo Shlafman

IPC分类号： G03F1/08 ,  G03F1/14 ,  G03F7/20 ,  G06F17/10 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F1/70 ,  G03F7/705

摘要： A first method to compute a phase map within an optical proximity correction simulation kernel utilizes simulated wavefront information from randomly generated data. A second method uses measured data from optical tools. A phase map is created by analytically embedding a randomly generated two-dimensional array of complex numbers of wavefront information, and performing an inverse Fourier Transform on the resultant array. A filtering function requires the amplitude of each element of the array to be multiplied by a Gaussian function. A power law is then applied to the array. The elements of the array are shuffled, and converted from the phasor form to real/imaginary form. A two-dimensional Fast Fourier Transform is applied. The array is then unshuffled, and converted back to phasor form.

摘要翻译： 计算光学邻近校正模拟核心内的相位图的第一种方法利用来自随机产生的数据的模拟波阵面信息。 第二种方法使用来自光学工具的测量数据。 通过分析地嵌入复数数目的波阵面信息的随机生成的二维阵列并在所得到的阵列上执行逆傅里叶变换来创建相位图。 滤波函数要求阵列的每个元素的幅度乘以高斯函数。 然后将幂律应用于阵列。 数组的元素被洗牌，并从相量形式转换为实数/虚数形式。 应用二维快速傅立叶变换。 然后数组被清洗，并转换回到相量形式。

公开(公告)号：US20080100817A1

公开(公告)日：2008-05-01

申请号：US11957602

申请日：2007-12-17

申请人： Alan Rosenbluth

发明人： Alan Rosenbluth

IPC分类号： G03B27/72

CPC分类号： G03F7/70125

摘要： Disclosed is a method for illuminating a lithographic mask with light from different directions, in such a way that the intensities of the various incident beams provide the largest possible integrated process window. The process window is defined in terms of allowable ranges for printed shapes. For example, boundaries of the process window may be defined by shape limits corresponding to underexposed and overexposed conditions. Intensity parameters for representing the maximum possible intensities that can be permitted for overexposed tolerance positions are imposed through application of various constraints. Another set of intensity parameters for representing the minimum possible intensities that can be permitted for underexposed tolerance positions are imposed through application of various constraints. One parameter of each kind is defined for each of a number of different focal ranges. The optimum source intensities are determined from a linear program involving these and other constraints. The determined source intensities maximize the integrated range of dose and focal variations that can be tolerated without causing the printed shapes to depart from the allowed range of shapes.

摘要翻译： 公开了一种利用来自不同方向的光照射光刻掩模的方法，使得各种入射光束的强度提供最大的可能的整合过程窗口。 过程窗口根据打印形状的允许范围进行定义。 例如，过程窗口的边界可以由对应于曝光不足和曝光过度的条件的形状限制来定义。 通过应用各种约束来强加用于表示可能允许暴露过度的公差位置的最大可能强度的强度参数。 通过应用各种约束来施加另一组强度参数，用于表示可以允许曝光不足位置的最小可能强度。 为各种不同的焦点范围中的每一个定义了每种类型的一个参数。 最优源强度由涉及这些和其他约束的线性程序确定。 确定的源强度使得可以容忍的剂量和焦点变化的积分范围最大化，而不会使印刷形状偏离允许的形状范围。