Covalent carbon nitride material comprising C.sub.2 N and formation
method
    3.
    发明授权
    Covalent carbon nitride material comprising C.sub.2 N and formation method 失效
    包含C2N的共价碳氮化物材料和形成方法

    公开(公告)号:US5840435A

    公开(公告)日:1998-11-24

    申请号:US477194

    申请日:1995-06-07

    Abstract: A nitride material comprises C.sub.2 N. A method of forming a covalent carbon material includes forming an atomic nitrogen source, forming an elemental reagent source and combining the atomic nitrogen, elemental reagent to form the covalent carbon material and annealing the covalent carbon material. The elemental reagent is reactive with the atomic nitrogen of the atomic nitrogen source to form the covalent carbon material. Annealing the covalent carbon material produces the C.sub.2 N. In one embodiment, essentially all carbon nitride chemical bonds are single or double bonds.

    Abstract translation: 氮化物材料包括C2N。 形成共价碳材料的方法包括形成原子氮源,形成元素试剂源并组合原子氮元素试剂以形成共价碳材料并退火共价碳材料。 元素试剂与原子氮源的原子氮反应形成共价碳材料。 退火共价碳材料产生C2N。 在一个实施方案中,基本上所有的碳氮化物化学键都是单键或双键。

    COATED ARTICLE AND METHOD FOR MAKING SAME
    6.
    发明申请
    COATED ARTICLE AND METHOD FOR MAKING SAME 审中-公开
    涂层制品及其制造方法

    公开(公告)号:US20120171474A1

    公开(公告)日:2012-07-05

    申请号:US13166318

    申请日:2011-06-22

    Abstract: A coated article is provided. The coated article includes a substrate, a hydrophobic layer formed on the substrate. The hydrophobic layer includes a first layer portion formed on the substrate and a second layer portion formed on the first layer portion, the first layer portion is a CNy layer, the second layer portion is a CNxFz layer, wherein 1≦y≦3, 1≦x≦3, 1≦z≦4. The water contact angle of the hydrophobic layer is more than 110°. The hydrophobic layer has a good chemical stability, high-temperature resistance and a good abrasion resistance, which effectively extends the use time of the coated article. A method for making the coated article is also described there.

    Abstract translation: 提供涂层制品。 涂覆制品包括基材,形成在基材上的疏水层。 疏水层包括形成在基板上的第一层部分和形成在第一层部分上的第二层部分,第一层部分是CNy层,第二层部分是CNxFz层,其中1≦̸ y≦̸ 3,1& ; x≦̸ 3,1≦̸ z≦̸ 4。 疏水层的水接触角大于110°。 疏水层具有良好的化学稳定性,耐高温性和良好的耐磨性,有效延长了涂层制品的使用时间。 还描述了制造涂覆制品的方法。

    METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
    7.
    发明申请
    METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM 审中-公开
    制造磁记录介质的方法

    公开(公告)号:US20120082800A1

    公开(公告)日:2012-04-05

    申请号:US13216555

    申请日:2011-08-24

    Abstract: According to one embodiment, there is provided a method for manufacturing a magnetic recording medium, the method including: depositing a magnetic recording layer on a substrate; forming a mask on a region of the magnetic recording layer corresponding to a recording area; irradiating another region of the magnetic recording layer where the mask is not formed with an ion beam using a C-containing gas as a source gas to deactivate the another region and to thereby form a non-recording area; and forming a protective film over an entire surface of the substrate.

    Abstract translation: 根据一个实施例,提供了一种用于制造磁记录介质的方法,所述方法包括:在基板上沉积磁记录层; 在对应于记录区域的磁记录层的区域上形成掩模; 使用含C气体作为源气体照射没有形成掩模的磁记录层的另一个区域,使离子束使其另一区域失活,从而形成非记录区域; 以及在所述基板的整个表面上形成保护膜。

    Thin film protective layer with buffering interface
    9.
    发明授权
    Thin film protective layer with buffering interface 失效
    具有缓冲接口的薄膜保护层

    公开(公告)号:US06969447B2

    公开(公告)日:2005-11-29

    申请号:US10756556

    申请日:2004-01-12

    Abstract: A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The “high energy” phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.

    Abstract translation: 公开了一种用于溅射具有改善的耐久性的薄膜保护层的方法。 该方法在初始沉积期间降低外涂层材料的离子的动能,形成缓冲界面,从而减少保护层原子相互渗透到下面的膜中。 在本发明的方法中,外涂层的溅射优选以施加到下面的膜的零(或非常低的)电压开始,导致在底层膜中的最小离子注入。 该过程的“高能”阶段从施加到底层薄膜的负偏置电压的大小的增加开始。 在等离子体中赋予离子的较高能量导致在初始缓冲层上形成更致密和更硬的膜。 保护层优选包含碳和氮。

    Method for producing multilayer film perpendicular magnetic recording medium
    10.
    发明申请
    Method for producing multilayer film perpendicular magnetic recording medium 失效
    多层膜垂直磁记录介质的制造方法

    公开(公告)号:US20050249870A1

    公开(公告)日:2005-11-10

    申请号:US11103653

    申请日:2005-04-11

    Inventor: Yasuyuki Kawada

    Abstract: A method for producing a magnetic recording medium in which the noise of the magnetic recording medium is reduced and the thermal stability of the recorded magnetization is improved, while enabling easy writing to be carried out by a recording head, is disclosed. The magnetic recording medium of the present invention includes an underlayer having an hcp crystal structure and a magnetic layer produced by a multilayer lamination of Co/Pt or the like. The deposition rate of the underlayer is equal to or lower than 0.7 nm/second. The magnetic layer contains added silicon oxide at 1 to 10 mol %. The present method includes a step for subjecting the surface of the underlayer to Ar gas mixed with oxygen of a mass/flow rate ratio of 1% to 10% under a gas pressure of 0.1 to 10 Pa for 1 to 10 second(s). The magnetic recording medium may include an orientation control layer and a soft magnetic backing layer. Ku, Ku1, and Ku2 are controlled to provide both of thermal stability and easy writing.

    Abstract translation: 公开了一种制造磁记录介质的方法,其中磁记录介质的噪声减小并且记录磁化的热稳定性得到改善,同时能够通过记录头进行容易的写入。 本发明的磁记录介质包括具有hcp晶体结构的底层和通过Co / Pt等的多层层叠产生的磁性层。 底层的沉积速度等于或低于0.7nm /秒。 磁性层含有1〜10摩尔%的加成氧化硅。 本方法包括在气体压力为0.1〜10Pa下1〜10秒的质量/流量比为1%〜10%的下层的与Ar混合的Ar气体的表面进行1〜10秒的步骤。 磁记录介质可以包括取向控制层和软磁背衬层。 Ku,Ku< 1>和Ku& 2< 2>被控制以提供热稳定性和容易书写。

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