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    Magnetization drive method, magnetic functional device, and magnetic apparatus
    1.
    发明授权
    Magnetization drive method, magnetic functional device, and magnetic apparatus 失效
    磁化驱动方法，磁功能元件及磁性装置

    公开(公告)号：US06483741B1

    公开(公告)日：2002-11-19

    申请号：US09664467

    申请日：2000-09-18

    申请人： Yoh Iwasaki ,  Teiichi Miyauchi ,  Kazuhiro Bessho

    发明人： Yoh Iwasaki ,  Teiichi Miyauchi ,  Kazuhiro Bessho

    IPC分类号： G11C1118

    CPC分类号： G11C11/15 ,  G11C11/16

    摘要： A magnetic functional device allowing magnetization switching at a high speed even if the size of a magnetic substance is made finer on the sub-micron order. The magnetic functional device includes an information carrier layer formed by a magnetic substance; and a strain-imparting layer (such as piezoelectric layer) formed below the information layer and operably configured to impart a drive force to change the direction of a magnetization vector lying in a first plane of the information carrier thereby processing binary or more information by magnetization directions of the information carrier layer; wherein the drive force is applied in pulse to the information carrier layer in a direction nearly perpendicular to the first plane in which lies the magnetization vector of the information carrier layer when the magnetization vector is in an initial state before the application of the drive force. An effective field derived from a magnetic anisotropy or exchange interaction is used as the drive force.

    摘要翻译： 磁性功能器件即使磁性物质的尺寸在亚微米级上更细，也能够高速地进行磁化切换。 磁性功能器件包括由磁性物质形成的信息载体层; 以及形成在信息层下方的应变赋予层（例如压电层），并可操作地构造成赋予驱动力以改变位于信息载体的第一平面中的磁化矢量的方向，从而通过磁化来处理二进制或更多信息 信息载体层的方向; 其中当在施加驱动力之前磁化矢量处于初始状态时，驱动力以大致垂直于第一平面的方向脉冲施加到信息载体层的磁化矢量。 使用来自磁各向异性或交换相互作用的有效磁场作为驱动力。

    Magnetic functional element and magnetic recording medium
    2.
    发明授权
    Magnetic functional element and magnetic recording medium 有权
    磁性功能元件和磁记录介质

    公开(公告)号：US06387476B1

    公开(公告)日：2002-05-14

    申请号：US09393970

    申请日：1999-09-10

    申请人： Yoh Iwasaki ,  Kazuhiro Bessho

    发明人： Yoh Iwasaki ,  Kazuhiro Bessho

    IPC分类号： G11B566

    CPC分类号： G11B5/65 ,  G11B5/00 ,  G11B5/62 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11C11/02 ,  G11C11/14 ,  G11C11/16 ,  G11C11/5607 ,  Y10S428/90 ,  Y10T428/24942

    摘要： A magnetic functional element can operate stably and reliably with a satisfactorily low rate of power consumption if used to realize an enhanced degree of integration. The magnetic fuctional element comprises strain-sensitive magnetic layer 2 having a magnetic state variable with strain and a strain applying layer 3 adapted to apply strain to the strain-sensitive magnetic layer. The magnetic state of the strain-sensitive magnetic layer 2 is controlled by controlling the strain applied to the strain-sensitive magnetic layer 2. Thus, it is no longer necessary to generate a magnetic field by means of an electric current in order to change the magnetic state of the element.

    摘要翻译： 如果用于实现增强的集成度，则磁功能元件可以以令人满意的低功耗率稳定可靠地操作。 磁性功能元件包括具有应变的具有磁状态变化的应变敏感磁性层2和适用于应变敏感磁性层的应变施加层3。 通过控制施加到应变敏感磁性层2的应变来控制应变敏感磁性层2的磁状态。因此，不再需要通过电流产生磁场，以便改变 元素的磁状态。

    Element exploiting magnetic material and addressing method therefor
    3.
    发明授权
    Element exploiting magnetic material and addressing method therefor 有权
    利用磁性材料的元素及其寻址方法

    公开(公告)号：US06178112B1

    公开(公告)日：2001-01-23

    申请号：US09248907

    申请日：1999-02-12

    申请人： Kazuhiro Bessho ,  Yoh Iwasaki

    发明人： Kazuhiro Bessho ,  Yoh Iwasaki

    IPC分类号： G11C1115

    CPC分类号： H01L29/66984 ,  G11C11/22 ,  G11C11/5607 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L43/08

    摘要： An element that is able to control magnetization without applying a magnetic field from outside. A magnetized area formed of a ferromagnetic material is split by a spacer area of a composite material including a magnetic material and a semiconductor material. A stimulus is applied from outside to the spacer area to change the magnetic interaction between split magnetized areas to control the magnetization of the magnetized areas. Alternatively, a layered assembly made up of an electrically conductive layer containing an electrically conductive material and plural magnetic layers is provided so that the electrically conductive layer is arranged between the magnetic layers. The current is caused to flow through the electrically conductive layer to change the magnetic coupling state between the magnetic layers to control the direction of magnetization between the magnetic layers.

    摘要翻译： 能够在不施加来自外部的磁场的情况下控制磁化的元件。 由铁磁材料形成的磁化区域被包括磁性材料和半导体材料的复合材料的间隔区分开。 从外部向间隔区域施加刺激以改变分裂磁化区域之间的磁相互作用，以控制磁化区域的磁化。 或者，提供由包含导电材料和多个磁性层的导电层构成的层叠组件，使得导电层布置在磁性层之间。 使电流流过导电层以改变磁性层之间的磁耦合状态，以控制磁性层之间的磁化方向。

    Magnetization control method, information storage method, magnetic functional device, and information storage device
    4.
    发明授权
    Magnetization control method, information storage method, magnetic functional device, and information storage device 有权
    磁化控制方法，信息存储方法，磁功能装置和信息存储装置

    公开(公告)号：US06480412B1

    公开(公告)日：2002-11-12

    申请号：US09697540

    申请日：2000-10-26

    申请人： Kazuhiro Bessho ,  Yoh Iwasaki

    发明人： Kazuhiro Bessho ,  Yoh Iwasaki

    IPC分类号： G11C1115

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3213 ,  H01F10/3227 ,  H01L43/08

    摘要： A potential barrier region is positioned in direct or indirect contact with a region containing a magnetic element. The region containing a magnetic body has a multi-layered structure in which two ferromagnetic layers are separated by a non-magnetic intermediate layer, for example. The potential barrier region may be composed of a metal layer and a semiconductor layer, for example, and a Schottky barrier is produced between them. Magnetization of the region containing a magnetic body is controlled by modulating the potential barrier of the potential barrier region by means of application of an electric field. By using at least one magnetization of the region containing a magnetic element, storage of information is effected.

    摘要翻译： 势垒区域与包含磁性元件的区域直接或间接接触。 包含磁体的区域具有多层结构，其中例如通过非磁性中间层分离两个铁磁性层。 例如，势垒区域可以由金属层和半导体层构成，并且在它们之间产生肖特基势垒。 通过施加电场来调制势垒区的势垒来控制含有磁体的区域的磁化。 通过使用包含磁性元件的区域的至少一个磁化，实现信息的存储。

    Memory element and memory device
    7.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08611139B2

    公开(公告)日：2013-12-17

    申请号：US13226983

    申请日：2011-09-07

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

    摘要： There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

    摘要翻译： 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

    Memory element and memory device
    9.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08445980B2

    公开(公告)日：2013-05-21

    申请号：US13216453

    申请日：2011-08-24

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675

    摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.

    摘要翻译： 公开了一种包含分层结构的存储元件。 层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化 存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与 盖层的记忆层由Ta膜形成。

    Memory and write control method
    10.
    发明授权
    Memory and write control method 失效
    内存和写控制方式

    公开(公告)号：US08437180B2

    公开(公告)日：2013-05-07

    申请号：US12795933

    申请日：2010-06-08

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/161

    摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

    摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。