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    Chemical mechanical polishing method using slurry composition containing N-oxide compound
    3.
    发明授权
    Chemical mechanical polishing method using slurry composition containing N-oxide compound 有权
    使用含有N-氧化物的浆料组合物的化学机械抛光方法

    公开(公告)号：US09416297B2

    公开(公告)日：2016-08-16

    申请号：US14078797

    申请日：2013-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.

    Abstract translation: 本公开涉及一种化学机械抛光（CMP）浆料组合物，其提供高金属与电介质材料的选择性以及低的金属凹陷形成速率。 在一些实施方案中，所公开的浆料组合物具有氧化剂和蚀刻抑制剂。 氧化剂具有一个或多个氧分子的化合物。 蚀刻抑制剂具有氮氧化合物。 蚀刻抑制剂降低金属和电介质材料（例如，氧化物）去除的速率，但是以降低介电材料去除速率更大的方式这样做，以便为浆料组合物提供高金属（例如， ，锗）到介电材料去除选择性和低的金属凹陷形成速率。

    SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF GE-BASED MATERIALS AND DEVICES
    4.
    发明申请
    SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF GE-BASED MATERIALS AND DEVICES 有权
    基于GE的材料和设备的化学机械抛光的浆料组合物

    公开(公告)号：US20160071737A1

    公开(公告)日：2016-03-10

    申请号：US14480046

    申请日：2014-09-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  UWIZ TECHNOLOGY CO., LTD.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Song-Yuan Chang ,  Teng-Chun Tsai

    IPC: H01L21/306 ,  B24B37/04 ,  C09G1/02 ,  H01L21/67 ,  H01L29/66 ,  C09G1/04

    CPC classification number: C09G1/02 ,  B24B37/044 ,  B24B37/20 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67075 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78684

    Abstract: A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

    Abstract translation: 提供Ge或SiGe至介电材料的高选择性的CMP浆料组合物，Ge或SiGe凹陷形成的低速率包括氧化剂和除锗速率增强剂，其包括甲基吡啶化合物和甲基吡啶衍生物化合物中的至少一种 。 在一些实例中，浆料组合物还包括蚀刻抑制剂。 在一些情况下，浆料组合物可以包括研磨剂，表面活性剂，有机络合剂，螯合剂，有机或无机酸，有机或无机碱，腐蚀抑制剂或缓冲剂。 浆料组合物可以分布在设置在被配置为旋转的台板上的抛光垫的表面上。 此外，构造成容纳基板的工件载体可以使基板与旋转的抛光垫接触，从而利用浆料组合物抛光基板。

    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND
    8.
    发明申请
    CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND 有权
    使用含有氧化镍化合物的浆料组合物的化学机械抛光方法

    公开(公告)号：US20160329215A1

    公开(公告)日：2016-11-10

    申请号：US15215794

    申请日：2016-07-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. ,  UWiZ Technology Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Yun-Lung Ho ,  Neng-Kuo Chen ,  Wen-Feng Chueh ,  Sey-Ping Sun ,  Song-Yuan Chang

    IPC: H01L21/306 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  C09G1/02 ,  C09G1/04

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02532 ,  H01L21/76224 ,  H01L29/66636 ,  H01L29/66795

    Abstract: The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium compound regions including germanium interspersed between a plurality of oxide regions including an oxide. A slurry is then provided onto the semiconductor substrate. The slurry has an oxidant and an etching inhibitor configured to reduce a removal rate of the germanium relative to the oxide. A CMP process is then performed by bringing a chemical mechanical polishing pad in contact with top surfaces of the plurality of germanium compound regions and the plurality of oxide regions.

    Abstract translation: 本公开涉及一种执行具有高锗 - 氧化物去除选择性和低锗锗凹陷形成速率的化学机械平面化（CMP）工艺的方法。 该方法通过提供具有多个锗化合物区域的半导体衬底来进行，所述锗化合物区域包括散布在包括氧化物的多个氧化物区域之间的锗。 然后将浆料提供到半导体衬底上。 浆料具有氧化剂和蚀刻抑制剂，其被配置为降低锗相对于氧化物的去除速率。 然后通过使化学机械抛光垫与多个锗化合物区域和多个氧化物区域的顶表面接触来进行CMP工艺。

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