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    SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL
    3.
    发明申请
    SYSTEMS AND METHODS FOR DRYING HIGH ASPECT RATIO STRUCTURES WITHOUT COLLAPSE USING STIMULI-RESPONSIVE SACRIFICIAL BRACING MATERIAL 有权
    用STIMULI-RESPONSAR SACRIFICIAL BRACING材料干燥高度比例结构而没有收缩的系统和方法

    公开(公告)号：US20160086829A1

    公开(公告)日：2016-03-24

    申请号：US14489615

    申请日：2014-09-18

    Applicant: Lam Research Corporation

    Inventor： Ratchana Limary ,  Stephen Sirard

    IPC: H01L21/67 ,  H01L21/02 ,  B08B3/10

    CPC classification number: H01L21/67034 ,  F26B5/00 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/67028

    Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

    Abstract translation: 在使用湿蚀刻流体和/或湿清洗液中的至少一种分别在湿法蚀刻和/或湿法清洗基板中的至少一个之后进行用于干燥包括多个高纵横比（HAR）结构的基板的系统和方法 ，并且不干燥基底。 使用包括支撑材料的溶剂来移动多个HAR结构之间的流体。 在溶剂蒸发之后，支撑材料从溶液中沉淀并且至少部分地填充多个HAR结构。 多个HAR结构暴露于非基于等离子体的刺激以去除支撑材料。

    Plasma etching chamber and plasma etching system using same
    8.
    发明授权
    Plasma etching chamber and plasma etching system using same 有权
    等离子体蚀刻室和等离子体蚀刻系统

    公开(公告)号：US07615131B2

    公开(公告)日：2009-11-10

    申请号：US10514609

    申请日：2003-11-18

    Applicant: Dong-Soo Lim

    Inventor： Dong-Soo Lim

    IPC: C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC classification number: H01L21/02082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J2237/334

    Abstract: Disclosed is a plasma etching chamber for completely dry-cleaning a film material and particles deposited at the periphery of a wafer through plasma etching while generating plasma at the top to the bottom sides of the periphery of the wafer. A pair of top and bottom anodes facing each other is placed around the periphery of the wafer under the application of radio frequency through a cathode. Alternatively, a top cathode and a bottom anode are placed around the periphery of the wafer while facing each other and a view-ring shields the area of the cathode, the anode and the wafer from the outside. A plasma etching system includes a plurality of the above-structured etching chambers. A handler takes wafers from a plurality of cassette stands or load ports, and posture-corrects the orientation frat locations of the wafers by a wafer alignment unit. The wafers are charged into the plasma etching chambers directly or via load lock chambers. The handler takes the etched wafers from the chambers, and returns the wafers to the cassettes or the load ports directly or via the load lock chambers.

    Abstract translation: 公开了一种等离子体蚀刻室，用于通过等离子体蚀刻在晶片的周边的顶部至底部产生等离子体，完全干燥膜材料和沉积在晶片周边的颗粒。 在射频施加下通过阴极将一对顶部和底部的阳极相对放置在晶片的周边周围。 或者，顶部阴极和底部阳极围绕晶片的周边放置，同时彼此面对，并且视环从外部屏蔽阴极，阳极和晶片的区域。 等离子体蚀刻系统包括多个上述结构的蚀刻室。 处理器从多个盒架或装载端口取出晶片，并且通过晶片对准单元姿态校正晶片的取向边缘位置。 将晶片直接或通过负载锁定室装入等离子体蚀刻室。 处理器从室中取出蚀刻的晶片，并将晶片直接或经由负载锁定室返回到盒或负载端口。

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