公开(公告)号：US20090229629A1

公开(公告)日：2009-09-17

申请号：US12400332

申请日：2009-03-09

Applicant: Yi-Chia Lee ,  Wen Dar Liu ,  Archie Liao ,  Matthew I. Egbe ,  Madhukar Bhaskara Rao ,  Michael Walter Legenza ,  Chimin Sheu

Inventor： Yi-Chia Lee ,  Wen Dar Liu ,  Archie Liao ,  Matthew I. Egbe ,  Madhukar Bhaskara Rao ,  Michael Walter Legenza ,  Chimin Sheu

IPC: C23G1/02 ,  G03F7/42

CPC classification number: G03F7/425 ,  G03F7/426 ,  H01L21/02057 ,  H01L21/31133

Abstract: The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.

Abstract translation: 本发明是用于去除光致抗蚀剂的化学汽提器配方以及电子器件衬底的蚀刻和灰化残留物，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。 本发明也是通过使基材与制剂接触来除去光致抗蚀剂和蚀刻和灰化残留物的方法，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。

公开(公告)号：US20090227483A1

公开(公告)日：2009-09-10

申请号：US12394183

申请日：2009-02-27

Applicant: Wen Dar Liu ,  Yi Chia Lee ,  Archie Liao ,  Madhukar Bhaskara Rao ,  Matthew I. Egbe ,  Chimin Sheu ,  Michael Walter Legenza

Inventor： Wen Dar Liu ,  Yi Chia Lee ,  Archie Liao ,  Madhukar Bhaskara Rao ,  Matthew I. Egbe ,  Chimin Sheu ,  Michael Walter Legenza

IPC: G03F7/42

CPC classification number: G03F7/425 ,  C23G1/20 ,  G03F7/426

Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.

Abstract translation: 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。

公开(公告)号：US20130280123A1

公开(公告)日：2013-10-24

申请号：US13819249

申请日：2011-08-26

Applicant: Tianniu Chen ,  Steven Bilodeau ,  Chimin Sheu ,  Mutsumi Nakanishi ,  Masahiro Matsuoka ,  Fumio Nakayama ,  Peng Zhang ,  Michael B. Korzenski ,  Emanuel I. Cooper ,  Kate Veccharelli ,  Makonnen Payne

Inventor： Tianniu Chen ,  Steven Bilodeau ,  Chimin Sheu ,  Mutsumi Nakanishi ,  Masahiro Matsuoka ,  Fumio Nakayama ,  Peng Zhang ,  Michael B. Korzenski ,  Emanuel I. Cooper ,  Kate Veccharelli ,  Makonnen Payne

IPC: C09C3/08

CPC classification number: C09C3/08 ,  B81C1/00619 ,  B81C1/00928 ,  H01L21/02082 ,  H01L21/302 ,  H01L21/306

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

Abstract translation: 在干燥期间减少易碎的高纵横比结构所经受的毛细作用力的方法，以基本上防止在干燥过程中对所述高纵横比结构的损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

公开(公告)号：US08357646B2

公开(公告)日：2013-01-22

申请号：US12394183

申请日：2009-02-27

Applicant: Wen Dar Liu ,  Yi Chia Lee ,  Archie Liao ,  Madhukar Bhaskara Rao ,  Matthew I. Egbe ,  Chimin Sheu ,  Michael Walter Legenza

Inventor： Wen Dar Liu ,  Yi Chia Lee ,  Archie Liao ,  Madhukar Bhaskara Rao ,  Matthew I. Egbe ,  Chimin Sheu ,  Michael Walter Legenza

IPC: B08B3/00

CPC classification number: G03F7/425 ,  C23G1/20 ,  G03F7/426

Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.

Abstract translation: 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。