摘要:
A clean transfer system having a first vacuum chamber with a first transfer port, a first shutter for opening and closing the first transfer port and a first connecting member surrounding the first transfer port. The first connecting member is provided with at least an exterior portion. A second vaccum chamber includes a second transfer port, a second shutter for opening and closing the second transfer port, and a second connecting member surrounding the second transfer port. The second connecting member has at least an exterior portion. A closed space is formed between the first and second connecting members, so that the first and second shutters are movable within the closed space.
摘要:
A clean transfer method capable of safely transferring a semiconductor or the like to various apparatus for treating the semiconductor while keeping the environment clean. In the method, the semiconductor is transferred between a vacuum clean box arranged in a clean room and kept at the degree of vacuum of 1 Torr or less and a vacuum chamber arranged in a maintenance room while transfer ports of the vacuum clean box and vacuum chamber are kept air-tightly connected to each other. The vacuum clean box is movably arranged.
摘要:
A process for manufacturing an electronic component and an apparatus therefor capable of permitting die-bonding, wire-bonding and molding to be successively executed on a through-line. Die-bonding for adhesively mounting IC chips on a lead frame, wire-bonding for connecting bonding pads of the IC chips and the lead frame to each other through lead wires, and molding for forming a resin material into an outer package for covering each of the IC chips are successively executed on a through-line while transferring the lead frame by means of a conveyor.
摘要:
A chip resistor having configuration and dimensions of high precision and capable of operating with high reliability. The chip resistor includes end electrodes deposited on both side end surfaces of an insulating substrate according to a thin film deposition technique and integrally formed into a substantially C-shape so as to continuously and thoroughly cover the side end surfaces of the substrate. A resistance element may be formed according to either a thick film deposition technique or a thin film deposition technique. Also, a method for manufacturing such a chip resistor is provided.
摘要:
The technical problem to be solved is to change the thickness of the colored resin layer of the preform gradually in the upward or downward direction, by utilizing a tendency of gradual decrease in the thickness of the colored resin layer caused by the flow of the main resin inside the preform mold when the main resin and the colored resin are injected into the mold. This involves adjusting the injection pattern including the time of starting and ending the supply of the main resin and the colored resin, and pressure or velocity profiles, reducing the thickness of the colored resin layer gradually upstream or downstream, injection-molding the preform in which a color-gradated portion associated with the thickness of the colored resin layer has been formed, and biaxially drawing and blow molding this preform into a bottle having a color-gradated portion.
摘要:
A semiconductor includes an N-type impurity region provided in a substrate. A P-type RESURF layer is provided at a top face of the substrate in the N-type impurity region. A P-well has an impurity concentration higher than that of the P-type RESURF layer, and makes contact with the P-type RESURF layer at the top face of the substrate in the N-type impurity region. A first high-voltage-side plate is electrically connected to the N-type impurity region, and a low-voltage-side plate is electrically connected to a P-type impurity region. A lower field plate is capable of generating a lower capacitive coupling with the substrate. An upper field plate is located at a position farther from the substrate than the lower field plate, and is capable of generating an upper capacitive coupling with the lower field plate whose capacitance is greater than the capacitance of the lower capacitive coupling.
摘要:
Provided are an organic compound having high heat stability suitable for use in an organic light-emitting device, and an organic light-emitting device using the organic compound. The organic light-emitting device is an organic light-emitting device, including: an anode; a cathode; and an organic compound layer disposed between the anode and the cathode, in which at least one layer of the organic compound layer has a 6,12-dinaphthylchrysene derivative represented by one of the following general formulae (1) and (2): in the formulae (1) and (2), Z represents a naphthyl group, and Q represents an electron-withdrawing substituent selected from the group consisting of the following general formulae (3) to (5): in the formula (5), R1 represents a hydrogen atom or a methyl group.
摘要:
The technical problem to be solved is to change the thickness of the colored resin layer of the preform gradually in the upward or downward direction, by utilizing a tendency of gradual decrease in the thickness of the colored resin layer caused by the flow of the main resin inside the preform mold when the main resin and the colored resin are injected into the mold. This involves adjusting the injection pattern including the time of starting and ending the supply of the main resin and the colored resin, and pressure or velocity profiles, reducing the thickness of the colored resin layer gradually upstream or downstream, injection-molding the preform in which a color-gradated portion associated with the thickness of the colored resin layer has been formed, and biaxially drawing and blow molding this preform into a bottle having a color-gradated portion.
摘要:
Provided are an organic compound having high heat stability suitable for use in an organic light-emitting device, and an organic light-emitting device using the organic compound. The organic light-emitting device is an organic light-emitting device, including: an anode; a cathode; and an organic compound layer disposed between the anode and the cathode, in which at least one layer of the organic compound layer has a 6,12-dinaphthylchrysene derivative represented by one of the following general formulae (1) and (2): in the formulae (1) and (2), Z represents a naphthyl group, and Q represents an electron-withdrawing substituent selected from the group consisting of the following general formulae (3) to (5): in the formula (5), R1 represents a hydrogen atom or a methyl group.
摘要:
A capacity variable link apparatus including a main signal system and a control signal system is provided. The main signal system includes: an upper layer signal accommodation part; a lower layer path termination part; and a signal switching part for dividing the upper layer signal to lower layer signals in a lower layer path group having a capacity that is determined according to an amount of traffic of the upper layer signal. The control system includes: a traffic amount measuring part for measuring the amount of traffic of the upper layer and for determining whether the capacity of the lower layer path group is to be increased or decreased according to the amount; and a signal switching management part for controlling the signal switching part according to the result of the determination.