公开(公告)号：US20240369785A1

公开(公告)日：2024-11-07

申请号：US18775793

申请日：2024-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

公开(公告)号：US20240210619A1

公开(公告)日：2024-06-27

申请号：US18596662

申请日：2024-03-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei KUO ,  Chewn-Pu JOU ,  Hsing-Kuo Hsia

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/132 ,  H01S5/026

CPC classification number: G02B6/12019 ,  G02B6/124 ,  G02B6/132 ,  H01S5/026 ,  G02B2006/12121

Abstract: A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

公开(公告)号：US20240069291A1

公开(公告)日：2024-02-29

申请号：US17896089

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei KUO ,  Chewn-Pu Jou ,  Hsing-Kuo Hsia ,  Chih-Wei TSENG

IPC: G02B6/42 ,  G02B6/293

CPC classification number: G02B6/4215 ,  G02B6/29328 ,  G02B6/4206 ,  G02B6/4274

Abstract: A package structure comprises photonic dies and an interposer structure. Each photonic die includes a dielectric layer and a first grating coupler embedded in the dielectric layer. The interposer structure is disposed below the photonic dies. The interposer structure includes an oxide layer and a second grating coupler embedded in the oxide layer. The photonic dies are optically coupled through the first grating couplers of the photonic dies and the second grating coupler of the interposer structure.

公开(公告)号：US20230221511A1

公开(公告)日：2023-07-13

申请号：US17826098

申请日：2022-05-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4283 ,  G02B6/43 ,  G02B6/4238

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

公开(公告)号：US20220299709A1

公开(公告)日：2022-09-22

申请号：US17410971

申请日：2021-08-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei Kuo ,  Hsing-Kuo Hsia ,  Chewn-Pu Jou

IPC: G02B6/30 ,  G02B6/34

Abstract: A device for optical signal processing includes a first layer, a second layer and a waveguiding layer. A lens is disposed within the first layer and adjacent to a surface of the first layer. The second layer is underneath the first layer and adjacent to another surface of the first layer. The waveguiding layer is located underneath the second layer and configured to waveguide a light beam transmitted in the waveguiding layer. A grating coupler is disposed over the waveguiding layer. The lens is configured to receive, from one of the grating coupler or a light-guiding element, the light beam, and focus the light beam towards another one of the light-guiding element or the grating coupler.

公开(公告)号：US20200003950A1

公开(公告)日：2020-01-02

申请号：US16450725

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Kuo-Chiang Ting ,  Pin-Tso Lin ,  Sung-Hui Huang ,  Shang-Yun Hou ,  Chi-Hsi Wu

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/136 ,  G02B6/122

Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

公开(公告)号：US10267990B1

公开(公告)日：2019-04-23

申请号：US16205432

申请日：2018-11-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Chuei-Tang Wang ,  Hsing-Kuo Hsia ,  Yu-Kuang Liao ,  Chih-Chieh Chang

IPC: G02B6/12 ,  H05K1/02 ,  H05K1/11 ,  H05K1/18 ,  G02B6/124 ,  G02B6/136

Abstract: In an embodiment, a method includes: forming an interconnect including waveguides and conductive features disposed in a plurality of dielectric layers, the conductive features including conductive lines and vias, the waveguides formed of a first material having a first refractive index, the dielectric layers formed of a second material having a second refractive index less than the first refractive index; bonding a plurality of dies to a first side of the interconnect, the dies electrically connected by the conductive features, the dies optically connected by the waveguides; and forming a plurality of conductive connectors on a second side of the interconnect, the conductive connectors electrically connected to the dies by the conductive features.

公开(公告)号：US09391067B2

公开(公告)日：2016-07-12

申请号：US14673388

申请日：2015-03-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Der-Chyang Yeh ,  Hsing-Kuo Hsia ,  Hao-Hsun Lin ,  Chih-Ping Chao ,  Chin-Hao Su ,  Hsi-Kuei Cheng

IPC: H01L27/06 ,  H01L21/285 ,  H01L21/8249 ,  H01L29/45

CPC classification number: H01L27/0623 ,  H01L21/28518 ,  H01L21/8249 ,  H01L29/45

Abstract: A structure and method for providing a multiple silicide integration is provided. An embodiment comprises forming a first transistor and a second transistor on a substrate. The first transistor is masked and a first silicide region is formed on the second transistor. The second transistor is then masked and a second silicide region is formed on the first transistor, thereby allowing for device specific silicide regions to be formed on the separate devices.

公开(公告)号：US12066671B2

公开(公告)日：2024-08-20

申请号：US17826098

申请日：2022-05-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4283 ,  G02B6/4238 ,  G02B6/43

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

公开(公告)号：US11960122B2

公开(公告)日：2024-04-16

申请号：US17410971

申请日：2021-08-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei Kuo ,  Hsing-Kuo Hsia ,  Chewn-Pu Jou

IPC: G02B6/30 ,  G02B6/12 ,  G02B6/124 ,  G02B6/32 ,  G02B6/34

CPC classification number: G02B6/30 ,  G02B6/12002 ,  G02B6/124 ,  G02B6/32 ,  G02B6/34

Abstract: A device for optical signal processing includes a first layer, a second layer and a waveguiding layer. A lens is disposed within the first layer and adjacent to a surface of the first layer. The second layer is underneath the first layer and adjacent to another surface of the first layer. The waveguiding layer is located underneath the second layer and configured to waveguide a light beam transmitted in the waveguiding layer. A grating coupler is disposed over the waveguiding layer. The lens is configured to receive, from one of the grating coupler or a light-guiding element, the light beam, and focus the light beam towards another one of the light-guiding element or the grating coupler.