公开(公告)号：US12007611B2

公开(公告)日：2024-06-11

申请号：US17896089

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Wei Kuo ,  Chewn-Pu Jou ,  Hsing-Kuo Hsia ,  Chih-Wei Tseng

IPC: G02B6/42 ,  G02B6/293

CPC classification number: G02B6/4215 ,  G02B6/29328 ,  G02B6/4206 ,  G02B6/4274

Abstract: A package structure comprises photonic dies and an interposer structure. Each photonic die includes a dielectric layer and a first grating coupler embedded in the dielectric layer. The interposer structure is disposed below the photonic dies. The interposer structure includes an oxide layer and a second grating coupler embedded in the oxide layer. The photonic dies are optically coupled through the first grating couplers of the photonic dies and the second grating coupler of the interposer structure.

公开(公告)号：US12066671B2

公开(公告)日：2024-08-20

申请号：US17826098

申请日：2022-05-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4283 ,  G02B6/4238 ,  G02B6/43

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

公开(公告)号：US20240077670A1

公开(公告)日：2024-03-07

申请号：US18154687

申请日：2023-01-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Stefan Rusu ,  Chen-Hua Yu ,  Chewn-Pu Jou

IPC: G02B6/12 ,  G02B6/13

CPC classification number: G02B6/12004 ,  G02B6/13

Abstract: A semiconductor structure includes an optical interposer having at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer. The semiconductor structure further includes a first die disposed on the optical interposer and electrically connected to the optical interposer; a first substrate under the optical interposer; and conductive connectors under the first substrate.

公开(公告)号：US20230418002A1

公开(公告)日：2023-12-28

申请号：US18149325

申请日：2023-01-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wei Tseng ,  Jui Lin Chao ,  Hsing-Kuo Hsia ,  Yutong Wu ,  Chen-Hua Yu

IPC: G02B6/42

CPC classification number: G02B6/4214 ,  G02B6/4206 ,  H10B80/00

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device including a dielectric structure disposed on a first substrate. An edge coupler is disposed within the dielectric structure and comprises a plurality of optical core segments. A deflector structure is disposed within the dielectric structure and is laterally adjacent to the edge coupler. The deflector structure is configured to redirect an optical signal traveling along a first direction to a second direction towards the edge coupler.

公开(公告)号：US20240369785A1

公开(公告)日：2024-11-07

申请号：US18775793

申请日：2024-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

公开(公告)号：US20230221511A1

公开(公告)日：2023-07-13

申请号：US17826098

申请日：2022-05-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Tse Tang ,  Chewn-Pu Jou ,  Chih-Wei Tseng ,  Hsing-Kuo Hsia ,  Ming Yang Chung

IPC: G02B6/42 ,  G02B6/43

CPC classification number: G02B6/4283 ,  G02B6/43 ,  G02B6/4238

Abstract: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.