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公开(公告)号：US11984419B2
公开(公告)日：2024-05-14
申请号：US17874021
申请日：2022-07-26
发明人： Cheng-Hung Chen , Yu-Nu Hsu , Chun-Chen Liu , Heng-Chi Huang , Chien-Chen Li , Shih-Yen Chen , Cheng-Nan Hsieh , Kuo-Chio Liu , Chen-Shien Chen , Chin-Yu Ku , Te-Hsun Pang , Yuan-Feng Wu , Sen-Chi Chiang
IPC分类号： H01L23/00 , H01L21/60 , H01L23/498
CPC分类号： H01L24/13 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0362 , H01L2224/03622 , H01L2224/0401 , H01L2224/10145 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/11614 , H01L2224/11831 , H01L2224/11849 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13018 , H01L2224/13083 , H01L2224/13084 , H01L2224/13147 , H01L2224/13155 , H01L2224/16165 , H01L2224/16227 , H01L2224/16503 , H01L2224/16507 , H01L2224/73204 , H01L2224/81193 , H01L2224/8181 , H01L2224/81815 , H01L2924/01327 , H01L2924/2064 , H01L2224/11849 , H01L2924/00014 , H01L2224/13014 , H01L2924/00012 , H01L2224/13013 , H01L2924/00012 , H01L2224/13012 , H01L2924/00012 , H01L2224/11462 , H01L2924/00014 , H01L2224/1145 , H01L2924/00014 , H01L2224/81815 , H01L2924/00014
摘要： Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
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公开(公告)号：US11469203B2
公开(公告)日：2022-10-11
申请号：US17072798
申请日：2020-10-16
发明人： Cheng-Hung Chen , Yu-Nu Hsu , Chun-Chen Liu , Heng-Chi Huang , Chien-Chen Li , Shih-Yen Chen , Cheng-Nan Hsieh , Kuo-Chio Liu , Chen-Shien Chen , Chin-Yu Ku , Te-Hsun Pang , Yuan-Feng Wu , Sen-Chi Chiang
IPC分类号： H01L23/00 , H01L23/498
摘要： A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.
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公开(公告)号：US12021050B2
公开(公告)日：2024-06-25
申请号：US17814840
申请日：2022-07-26
发明人： Ming-Ho Tsai , Jyun-Hong Chen , Chun-Chen Liu , Yu-Nu Hsu , Peng-Ren Chen , Wen-Hao Cheng , Chi-Ming Tsai
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/11462 , H01L2224/11618 , H01L2224/117 , H01L2224/11849 , H01L2224/13026 , H01L2224/13147 , H01L2224/1403
摘要： A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.
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公开(公告)号：US11469198B2
公开(公告)日：2022-10-11
申请号：US16353425
申请日：2019-03-14
发明人： Ming-Ho Tsai , Jyun-Hong Chen , Chun-Chen Liu , Yu-Nu Hsu , Peng-Ren Chen , Wen-Hao Cheng , Chi-Ming Tsai
摘要： A semiconductor device manufacturing method including: simultaneously forming a plurality of conductive bumps respectively on a plurality of formation sites by adjusting a forming factor in accordance with an environmental density associated with each formation site; wherein the plurality of conductive bumps including an inter-bump height uniformity smaller than a value, and the environmental density is determined by a number of neighboring formation sites around each formation site in a predetermined range.
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