- 专利标题: Package structure with a barrier layer
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申请号: US17874021申请日: 2022-07-26
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公开(公告)号: US11984419B2公开(公告)日: 2024-05-14
- 发明人: Cheng-Hung Chen , Yu-Nu Hsu , Chun-Chen Liu , Heng-Chi Huang , Chien-Chen Li , Shih-Yen Chen , Cheng-Nan Hsieh , Kuo-Chio Liu , Chen-Shien Chen , Chin-Yu Ku , Te-Hsun Pang , Yuan-Feng Wu , Sen-Chi Chiang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 分案原申请号: US16194927 2018.11.19
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/60 ; H01L23/498
摘要:
Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
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