公开(公告)号：US11984419B2

公开(公告)日：2024-05-14

申请号：US17874021

申请日：2022-07-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Hung Chen ,  Yu-Nu Hsu ,  Chun-Chen Liu ,  Heng-Chi Huang ,  Chien-Chen Li ,  Shih-Yen Chen ,  Cheng-Nan Hsieh ,  Kuo-Chio Liu ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Yuan-Feng Wu ,  Sen-Chi Chiang

IPC分类号： H01L23/00 ,  H01L21/60 ,  H01L23/498

CPC分类号： H01L24/13 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0362 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11614 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/13012 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16165 ,  H01L2224/16227 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2924/01327 ,  H01L2924/2064 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/13014 ,  H01L2924/00012 ,  H01L2224/13013 ,  H01L2924/00012 ,  H01L2224/13012 ,  H01L2924/00012 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/81815 ,  H01L2924/00014

摘要： Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

公开(公告)号：US11469203B2

公开(公告)日：2022-10-11

申请号：US17072798

申请日：2020-10-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Hung Chen ,  Yu-Nu Hsu ,  Chun-Chen Liu ,  Heng-Chi Huang ,  Chien-Chen Li ,  Shih-Yen Chen ,  Cheng-Nan Hsieh ,  Kuo-Chio Liu ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Yuan-Feng Wu ,  Sen-Chi Chiang

IPC分类号： H01L23/00 ,  H01L23/498

摘要： A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.