公开(公告)号：US12089506B2

公开(公告)日：2024-09-10

申请号：US17578347

申请日：2022-01-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC: H01L43/02 ,  C23C14/34 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10N50/80 ,  C23C14/3407 ,  H10N50/01

Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

公开(公告)号：US12030008B2

公开(公告)日：2024-07-09

申请号：US17387951

申请日：2021-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC: B01D45/14 ,  C23C16/44 ,  C23C16/455

CPC classification number: B01D45/14 ,  C23C16/4407 ,  C23C16/45544

Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

公开(公告)号：US20240004137A1

公开(公告)日：2024-01-04

申请号：US18188102

申请日：2023-03-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng

IPC: G02B6/293

CPC classification number: G02B6/29338

Abstract: An optical device includes a first ring resonator positioned in a first plane, a first optical waveguide positioned in the first plane and configured to provide photons to the first ring resonator, a second ring resonator positioned in a second plane that is below the first plane, and a second optical waveguide positioned in the second plane. The second optical waveguide is configured to receive photons escaping from the second ring resonator.

公开(公告)号：US11693327B2

公开(公告)日：2023-07-04

申请号：US17869920

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/67

CPC classification number: G03F7/70916 ,  G03F7/707 ,  G03F7/70875 ,  H01L21/67115 ,  H01L21/67253

Abstract: A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

公开(公告)号：US20230010438A1

公开(公告)日：2023-01-12

申请号：US17585252

申请日：2022-01-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC: H01L23/532 ,  H01L21/02 ,  H01L23/535 ,  H01L21/762

Abstract: A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.

公开(公告)号：US20230008029A1

公开(公告)日：2023-01-12

申请号：US17578347

申请日：2022-01-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC: H01L43/02 ,  C23C14/34 ,  H01L43/12

Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

公开(公告)号：US11460787B2

公开(公告)日：2022-10-04

申请号：US17505941

申请日：2021-10-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng

IPC: G03F7/20 ,  H01L21/67

Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.

公开(公告)号：US20220365451A1

公开(公告)日：2022-11-17

申请号：US17869920

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng

IPC: G03F7/20 ,  H01L21/67

Abstract: A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

公开(公告)号：US20240384417A1

公开(公告)日：2024-11-21

申请号：US18788133

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455

Abstract: A thin film deposition system includes: a first precursor supply system configured to generate and supply a first precursor vapor from a first precursor source, the first precursor supply system comprising a first precursor source container, wherein at least a portion of an interior surface of the first precursor source container has a three-dimensional (3D) pattern, wherein the 3D pattern comprises a plurality of area enlarging elements configured to enlarge a total contact area of the interior surface of the first precursor source container with the first precursor source stored therein; and a deposition chamber in gas communication with the first precursor source container, the deposition chamber configured to receive the first precursor vapor and deposit a layer of a first precursor source onto a substrate placed in the deposition chamber.

公开(公告)号：US20240019758A1

公开(公告)日：2024-01-18

申请号：US18305785

申请日：2023-04-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Hao Cheng

IPC: G02F1/365 ,  G02F1/35

CPC classification number: G02F1/365 ,  G02F1/3536 ,  G02F1/3507

Abstract: An optical device includes a first ring resonator with a first radius, a second ring resonator with a second radius, and an optical waveguide feeding the first and second ring resonators in parallel. The first and second ring resonators are positioned on opposing sides of the optical waveguide. The first and second ring resonators and the optical waveguide are disposed above a semiconductor substrate.