公开(公告)号：US20250169135A1

公开(公告)日：2025-05-22

申请号：US19027055

申请日：2025-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H10D62/60 ,  H01L21/02 ,  H01L21/265 ,  H10D30/01 ,  H10D30/62 ,  H10D30/69 ,  H10D62/10 ,  H10D62/834

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US20210288151A1

公开(公告)日：2021-09-16

申请号：US17329929

申请日：2021-05-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US09634122B2

公开(公告)日：2017-04-25

申请号：US14205841

申请日：2014-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ru-Shang Hsiao ,  Ling-Sung Wang ,  Chih-Mu Huang ,  Chia-Ming Chang

IPC: H01L21/46 ,  H01L29/66 ,  H01L29/06 ,  H01L21/762 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L29/66795 ,  H01L21/28114 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/785

Abstract: Some embodiments relate to an integrated circuit (IC) including one or more field-effect transistor devices. A field effect transistor device includes source/drain regions disposed in an active region of a semiconductor substrate and separated from one another along a first direction by a channel region. A shallow trench isolation (STI) region, which has an upper STI surface, laterally surrounds the active region. The STI region includes trench regions, which have lower trench surfaces below the upper STI surface and which extend from opposite sides of the channel region in a second direction which intersects the first direction. A metal gate electrode extends in the second direction and has lower portions which are disposed in the trench regions and which are separated from one another by the channel region. The metal gate electrode has an upper portion bridging over the channel region to couple the lower portions to one another.

公开(公告)号：US10002802B2

公开(公告)日：2018-06-19

申请号：US15606098

申请日：2017-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Sheng-Tang Wang ,  Chia-Ming Chang ,  Shih-Che Lin ,  Chao-Jui Wang

IPC: H01L21/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: Methods for reducing core-to-core mismatch are provided. The method includes measuring gate lengths of a representative pattern of each core in a first lot of SOC products by a measurement apparatus. Each of the SOC products in the first lot includes more than two cores identical to each other. The method also includes determining a tuning amount according to the differences between the gate lengths of each core, and adjusting at least one mask for critical dimensions of gate length of each core in a second lot of SOC products respectively according to the tuning amounts.

公开(公告)号：US09666495B2

公开(公告)日：2017-05-30

申请号：US14105794

申请日：2013-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Tang Wang ,  Chia-Ming Chang ,  Shih-Che Lin ,  Chao-Jui Wang

IPC: H01L21/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: Methods for reducing core-to-core mismatch are provided. The method includes measuring gate lengths of a representative pattern of each core in a first lot of SOC products by a measurement apparatus. Each of the SOC products in the first lot includes more than two cores identical to each other. The method also includes determining tuning amounts according to the differences between the gate lengths of each core, and adjusting manufacturing conditions for critical dimensions of gate length of each core in a second lot of SOC products respectively according to the tuning amounts for reducing core-to-core mismatch due to the surrounding environment of each core. Each of the SOC products in the second lot includes more than two cores identical to each other and also identical to the cores in the first lot.

公开(公告)号：US09647122B2

公开(公告)日：2017-05-09

申请号：US15154982

申请日：2016-05-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Hsin-Chieh Huang ,  Cheng-Chien Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/36 ,  H01L29/06 ,  H01L29/49 ,  H01L29/40

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. A topmost location of the epitaxy structure has an n-type impurity concentration lower than an n-type impurity concentration of a location of the epitaxy structure below the topmost location.

公开(公告)号：US20230361181A1

公开(公告)日：2023-11-09

申请号：US18353498

申请日：2023-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/36 ,  H01L29/167 ,  H01L29/0657 ,  H01L29/785 ,  H01L21/26506 ,  H01L21/02532 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US09524965B2

公开(公告)日：2016-12-20

申请号：US14178906

申请日：2014-02-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Shuo Ho ,  Tsung-Yu Chiang ,  Chia-Ming Chang ,  Jyun-Ming Lin

IPC: H01L21/283 ,  H01L27/088 ,  H01L27/092 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/49 ,  H01L21/768 ,  H01L29/51

CPC classification number: H01L21/823456 ,  H01L21/0273 ,  H01L21/28008 ,  H01L21/28123 ,  H01L21/283 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659

Abstract: Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.

Abstract translation: 提供半导体器件结构的实施例及其形成方法。 半导体器件结构包括衬底和形成在衬底上的第一金属栅极结构。 第一金属栅极结构具有第一宽度。 半导体器件结构还包括邻近第一金属栅极结构形成的第一触点和形成在衬底上的第二金属栅极结构。 第二金属栅极结构具有小于第一宽度的第二宽度。 半导体器件结构还包括形成在第二金属栅极结构上的绝缘层和与第二金属栅极结构自对准的第二接触。

公开(公告)号：US12237380B2

公开(公告)日：2025-02-25

申请号：US18353498

申请日：2023-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L29/06 ,  H01L29/167 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US11749724B2

公开(公告)日：2023-09-05

申请号：US17329929

申请日：2021-05-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/36 ,  H01L21/02532 ,  H01L21/26506 ,  H01L29/0657 ,  H01L29/167 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.