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公开(公告)号：US10964468B2
公开(公告)日：2021-03-30
申请号：US16510343
申请日：2019-07-12
发明人： Sayeef Salahuddin , Shehrin Sayed
摘要： A magnetic memory structure employs electric-field controlled interlayer exchange coupling between a free magnetic layer and a fixed magnetic layer to switch a magnetization direction. The magnetic layers are separated by a spacer layer disposed between two oxide layers. The spacer layer exhibits a large IEC while the oxide layers provide tunnel barriers, forming a quantum-well between the magnetic layers with discrete energy states above the equilibrium Fermi level. When an electric field is applied across the structure, the tunnel barriers become transparent at discrete energy states via a resonant tunneling phenomenon. The wave functions of the two magnets then can interact and interfere to provide a sizable IEC. IEC can control the magnetization direction of the free magnetic layer relative to the magnetization direction of the fixed magnetic layer depending on the sign of the IEC, induced by a magnitude of the applied electric field above a threshold value.
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公开(公告)号：US20240349624A1
公开(公告)日：2024-10-17
申请号：US18034489
申请日：2021-10-28
CPC分类号： H10N52/101 , H01L23/66 , H10N50/85 , H10N52/80 , H10N59/00 , H01L2223/6677
摘要： A rectifier device, has a Hall layer comprising a layer of a Hall material, and a spin-orbit layer adjacent the Hall layer. The spin-orbit layer has a spin-orbit material having a first surface and a second surface, a ferromagnet adjacent the spin-orbit material, and oxide on the outer surfaces of the spin-orbit layer. A rectifying system has an array of the above rectifying devices having a number, K, of parallel branches, each branch having N devices, branch electrical connections between corresponding devices in each of the parallel branches, and device electrical connection between devices in each parallel branch.
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公开(公告)号：US10388349B2
公开(公告)日：2019-08-20
申请号：US15711726
申请日：2017-09-21
发明人： Yang Yang , Jon Gorchon , Richard Brian Wilson , Charles Henri Alexandre Lambert , Sayeef Salahuddin , Jeffrey Bokor
摘要： Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.
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公开(公告)号：US10607674B2
公开(公告)日：2020-03-31
申请号：US16170335
申请日：2018-10-25
摘要： A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.
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公开(公告)号：US20240186399A1
公开(公告)日：2024-06-06
申请号：US18553602
申请日：2022-04-05
CPC分类号： H01L29/513 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L29/401 , H01L29/517
摘要： Disclosed are HfO2—ZrO2 superlattice heterostructures such as a gate stack (24), stabilized with mixed ferroelectric-antiferroelectric order. directly integrated onto silicon (Si) transistors and scaled down to ˜20 Å. the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal-oxide-semiconductor capacitors is ˜6.5 Å effective SiO2 thickness, which is even smaller than the interfacial SiO2 thickness (8.0-8.5 Å) itself. and the resulting large capacitance cannot be achieved in conventional HfO2-based high-κ dielectric gate stacks without scavenging the interfacial SiO2. which has adverse effects on the electron transport and gate leakage current. Accordingly. the disclosed gate stacks (24), which do not require such scavenging. provide substantially lower leakage current and no mobility degradation and demonstrate that HfO2—ZrO2 multilayers with competing ferroelectric-antiferroelectric order, stabilized in the sub-2 nm thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond the conventional HfO2-based high-κ dielectrics.
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公开(公告)号：US20240136437A1
公开(公告)日：2024-04-25
申请号：US18546807
申请日：2022-02-22
发明人： Sayeef Salahuddin , Ava Jiang Tan
CPC分类号： H01L29/78391 , H10B51/30
摘要： A ferroelectric field-effect transistor having an endurance exceeding 1012 cycles is disclosed. The ferroelectric field-effect transistor includes a substrate, a source disposed over a first region of the semiconductor substrate, a drain disposed over a second region of the substrate, wherein the second region is spaced apart from the first region. The ferroelectric field-effect transistor includes a channel made of a semiconductor material within a third region of the substrate that is between the first region and the second region. The ferroelectric field-effect transistor further includes a gate stack having an interfacial layer disposed over the channel, wherein the interfacial layer has a permittivity that is greater than 3.9, and a layer of ferroelectric material disposed over the interfacial layer.
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公开(公告)号：US20210012940A1
公开(公告)日：2021-01-14
申请号：US16510343
申请日：2019-07-12
发明人： Sayeef Salahuddin , Shehrin Sayed
摘要： A magnetic memory structure employs electric-field controlled interlayer exchange coupling between a free magnetic layer and a fixed magnetic layer to switch a magnetization direction. The magnetic layers are separated by a spacer layer disposed between two oxide layers. The spacer layer exhibits a large IEC while the oxide layers provide tunnel barriers, forming a quantum-well between the magnetic layers with discrete energy states above the equilibrium Fermi level. When an electric field is applied across the structure, the tunnel barriers become transparent at discrete energy states via a resonant tunneling phenomenon. The wave functions of the two magnets then can interact and interfere to provide a sizable IEC. IEC can control the magnetization direction of the free magnetic layer relative to the magnetization direction of the fixed magnetic layer depending on the sign of the IEC, induced by a magnitude of the applied electric field above a threshold value.
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公开(公告)号：US20190130954A1
公开(公告)日：2019-05-02
申请号：US16170335
申请日：2018-10-25
摘要： A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.
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公开(公告)号：US20240234574A9
公开(公告)日：2024-07-11
申请号：US18546807
申请日：2022-02-22
发明人： Sayeef Salahuddin , Ava Jiang Tan
CPC分类号： H01L29/78391 , H10B51/30
摘要： A ferroelectric field-effect transistor having an endurance exceeding 1012 cycles is disclosed. The ferroelectric field-effect transistor includes a substrate, a source disposed over a first region of the semiconductor substrate, a drain disposed over a second region of the substrate, wherein the second region is spaced apart from the first region. The ferroelectric field-effect transistor includes a channel made of a semiconductor material within a third region of the substrate that is between the first region and the second region. The ferroelectric field-effect transistor further includes a gate stack having an interfacial layer disposed over the channel, wherein the interfacial layer has a permittivity that is greater than 3.9, and a layer of ferroelectric material disposed over the interfacial layer.
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公开(公告)号：US11837211B2
公开(公告)日：2023-12-05
申请号：US16464066
申请日：2017-12-11
摘要： An acoustically driven ferromagnetic resonance (ADFMR) device includes a piezoelectric element, a pair of transducers arranged to activate the piezoelectric element to generate an acoustic wave, a magnetostrictive element arranged to receive the acoustic wave, and a readout circuit to detect one of either a change in the magnetostrictive element or a change in the acoustic wave.
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