公开(公告)号：US11991931B2

公开(公告)日：2024-05-21

申请号：US17124643

申请日：2020-12-17

Applicant: TDK CORPORATION

Inventor： Minoru Ota ,  Tatsuo Shibata

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

公开(公告)号：US09502056B1

公开(公告)日：2016-11-22

申请号：US15082992

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Hidekazu Kojima ,  Takayasu Kanaya ,  Hideyuki Ukita ,  Minoru Ota ,  Kohei Honma

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  G01R33/09 ,  G01R33/098 ,  G11B5/39 ,  G11B5/3909 ,  G11B5/3932 ,  H01L43/08 ,  H01L43/12

Abstract: A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

Abstract translation: TMR元件包括具有侧壁的堆叠以及与侧壁接触的绝缘层。 堆叠包括第一铁磁层，第二铁磁层和位于第一和第二铁磁层之间的隧道势垒层。 绝缘层包括仅与侧壁的一部分接触的岛状结构部分和覆盖岛状结构部分和侧壁的涂覆部分。 隧道势垒层含有第一氧化物。 岛状结构部分包含第二氧化物。 第一和第二氧化物中的每一个都是金属氧化物或半导体氧化物。 G2-G1为435kJ / mol以下，其中G1和G2分别为第一氧化物和第二氧化物在280℃下形成的标准吉布斯能量。

公开(公告)号：US09792934B2

公开(公告)日：2017-10-17

申请号：US15059383

申请日：2016-03-03

Applicant: TDK Corporation

Inventor： Tetsuya Hiraki ,  Minoru Ota ,  Hisayoshi Watanabe ,  Kenzo Makino ,  Hideyuki Ukita

IPC: G11B5/39 ,  G11B5/11

CPC classification number: G11B5/3912 ,  G11B5/112 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3951 ,  G11B5/3977

Abstract: A multi reader head has a plurality of readers that are laminated via a gap layer(s), and each of the readers has a structure in which a current-perpendicular-to-plane (CPP) type of magneto-resistive effect element, where a current flows along the lamination direction, is interposed between a pair of shields that function as an electrode, respectively, from both sides in the lamination direction. The shields that are opposed from each other via the gap layer of the readers that are adjacent in the lamination direction by a distance that is not constant, but include a portion with a greater distance between the shields and another portion with a smaller distance between the shields are included. The portion with a greater distance between the shields is situated at a position away from the center on an air bearing surface opposing to a recording medium in the magneto-resistive effect element.

公开(公告)号：US09129622B2

公开(公告)日：2015-09-08

申请号：US13842948

申请日：2013-03-15

Applicant: TDK Corporation

Inventor： Takahiko Machita ,  Naomichi Degawa ,  Takekazu Yamane ,  Takumi Yanagisawa ,  Satoshi Miura ,  Kenta Hamamoto ,  Minoru Ota ,  Kenzo Makino ,  Shohei Kawasaki

IPC: G11B5/39 ,  H01L43/08 ,  G01R33/09

CPC classification number: G11B5/3912 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/08

Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

Abstract translation: 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。

公开(公告)号：US11489109B2

公开(公告)日：2022-11-01

申请号：US16952274

申请日：2020-11-19

Applicant: TDK CORPORATION

Inventor： Yohei Shiokawa ,  Minoru Ota ,  Tomoyuki Sasaki ,  Yoshitomo Tanaka

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L27/22 ,  G11C13/00

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

公开(公告)号：US10665375B2

公开(公告)日：2020-05-26

申请号：US16116547

申请日：2018-08-29

Applicant: TDK CORPORATION

Inventor： Minoru Ota ,  Tomoyuki Sasaki ,  Hirokazu Takahashi

IPC: G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  H01L43/08 ,  H01F10/12 ,  H01L43/06

Abstract: The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.

公开(公告)号：US09767834B1

公开(公告)日：2017-09-19

申请号：US15074071

申请日：2016-03-18

Applicant: TDK Corporation

Inventor： Tetsuya Hiraki ,  Minoru Ota ,  Hisayoshi Watanabe ,  Takahiko Machita ,  Hideyuki Ukita

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/39 ,  G11B5/3906 ,  G11B5/3932

Abstract: A magnetic head includes a magneto-resistance effect element in the form of a multilayer film, a pair of shields between which the magneto-resistance effect element is interposed in the lamination direction of the layers of the magneto-resistance effect element and each functioning as an electrode, a pair of side shields with one of said side shields on each side of the magneto-resistance effect element in the direction perpendicular to the lamination direction of the magneto-resistance effect element interposed between the pair of shields, the side shields magnetically coupled to either of the pair of shields, and an anisotropy-application layer disposed adjacent to the shield magnetically coupled to the pair of side shields. The pair of shields, the magneto-resistance effect element, and the pair of side shields are exposed on the air bearing surface facing a recording medium. The anisotropy-application layer is not exposed on the air bearing surface and is provided at a position away from the air bearing surface.

公开(公告)号：US12225830B2

公开(公告)日：2025-02-11

申请号：US17542647

申请日：2021-12-06

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Minoru Ota ,  Tatsuo Shibata

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of a film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

公开(公告)号：US11696512B2

公开(公告)日：2023-07-04

申请号：US17141347

申请日：2021-01-05

Applicant: TDK CORPORATION

Inventor： Minoru Ota ,  Tatsuo Shibata ,  Minoru Sanuki

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  H01F10/32 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic domain wall moving element according to an embodiment includes: a magnetic recording layer, a ferromagnetic layer, and a non-magnetic layer arranged between the magnetic recording layer and the ferromagnetic layer, wherein the ferromagnetic layer contains an additive element dispersed therein, and the additive element is one or more of H, He, Ne, Ar, Kr, Xe, N, C, Ag, Cu, Hg, Au, Pb, Zn, and Bi.

公开(公告)号：US08913349B2

公开(公告)日：2014-12-16

申请号：US13853869

申请日：2013-03-29

Applicant: TDK Corporation

Inventor： Takekazu Yamane ,  Takahiko Machita ,  Naomichi Degawa ,  Minoru Ota ,  Kenta Hamamoto

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract translation: MR元件包括CP部分和CPP结构中的上下屏蔽层。 MR元件具有侧屏蔽层，以便在侧屏蔽层之间沿轨道宽度方向插入MR部分。 MR部分包括非磁性中间层和第一和第二铁磁层，以将非磁性中间层介于铁磁层之间。 上下屏蔽层中的每一个具有倾斜的磁化结构，使得其磁化相对于磁道宽度方向倾斜。 侧屏蔽层分别与上屏蔽层磁耦合。 第二铁磁层经由交换耦合功能间隙层与下屏蔽层间接地磁耦合。 侧屏蔽层向第一铁磁层施加偏置磁场; 并且第一和第二铁磁层的磁化基本上是正交的。