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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11538914B2

    公开(公告)日：2022-12-27

    申请号：US17224956

    申请日：2021-04-07

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Ta-Yuan Kung ,  Ruey-Hsin Liu ,  Chen-Liang Chu ,  Chih-Wen Yao ,  Ming-Ta Lei

    IPC分类号： H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06

    摘要： A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

    Semiconductor structure and associated fabricating method
    2.
    发明授权
    Semiconductor structure and associated fabricating method 有权

    公开(公告)号：US11508845B2

    公开(公告)日：2022-11-22

    申请号：US17028796

    申请日：2020-09-22

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Chen-Liang Chu ,  Ta-Yuan Kung ,  Ker-Hsiao Huo ,  Yi-Huan Chen

    IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L23/522 ,  H01L29/06 ,  H01L29/66

    摘要： A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.

    METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR GATE
    5.
    发明申请
    METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR GATE 有权
    用于形成半导体栅的方法和装置

    公开(公告)号：US20150279951A1

    公开(公告)日：2015-10-01

    申请号：US14737802

    申请日：2015-06-12

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Chen-Liang Chu ,  Fei-Yun Chen ,  Chih-Wen Yao

    IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

    CPC分类号： H01L29/4238 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66477 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7835

    摘要： The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

    摘要翻译： 本公开提供了一种用于制造半导体栅极的装置和方法。 该装置包括：具有有源区和与该有源区形成界面的电介质区的衬底; 位于所述有源区的一部分上方的栅电极和所述电介质区的一部分; 以及设置在所述栅电极内的介电材料，所述电介质材料设置在所述有源区和所述电介质区之间的界面附近。 该方法包括：提供具有与活性区形成界面的有源区和电介质区的衬底; 在所述衬底上形成栅电极，所述栅电极在所述界面之上的所述栅电极的区域附近具有开口; 并用介电材料填充开口。