公开(公告)号：US5800233A

公开(公告)日：1998-09-01

申请号：US599315

申请日：1996-02-09

申请人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

发明人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/40

CPC分类号： H01J9/025

摘要： A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

摘要翻译： 通过在其上沉积镍在玻璃基板上形成阴极，并且通过溅射使二氧化硅积聚在阴极上以形成绝缘膜。 然后，通过在其上沉积镍，在绝缘膜上设置栅电极。 通过光刻在玻璃基板上形成孔以进行图案化，并且选择性地蚀刻栅电极和绝缘膜，以形成用于形成发射电子的发射极的孔。 此外，通过沉积将镍堆积到孔中以形成发射极，随后用硫作为高蒸气压物质覆盖发射体以形成高蒸气压物质层。

公开(公告)号：US5676873A

公开(公告)日：1997-10-14

申请号：US492756

申请日：1995-06-21

申请人： Takeo Takase ,  Masao Urayama ,  Terutaka Tokumaru ,  Minoru Makita ,  Seiki Yano

发明人： Takeo Takase ,  Masao Urayama ,  Terutaka Tokumaru ,  Minoru Makita ,  Seiki Yano

IPC分类号： H05B6/66 ,  H01J1/304 ,  H01J3/02 ,  H01J23/04 ,  H01J23/075 ,  H01J23/20 ,  H01J23/34 ,  H05B6/74 ,  H05B6/64 ,  H01J25/50

CPC分类号： H01J23/075 ,  H01J3/022 ,  H05B6/74 ,  H01J2225/50

摘要： There is provided a magnetron comprising a cold cathode having an electron emitting member which is formed linearly or as a plane on a substrate to emit electrons a subdivided anode disposed oppositely in parallel with the electron emitting member, the subdivided anode having cavity resonators formed therein at the side of the cold cathode, and a magnet which producing a magnetic field lying at right angles to an electric field applied between the cold cathode and the subdivided anode. There is also provided a microwave oven for dielectric-heating a substance to be heated by using the magnetron as a microwave supply source.

摘要翻译： 提供了一种磁控管，其包括具有电子发射部件的冷阴极，该电子发射部件在基板上线性地或作为平面形成以向与电子发射部件平行地平行设置的细分阳极发射电子，该细分阳极具有形成在其中的空腔谐振器 冷阴极的一侧，以及产生与施加在冷阴极和细分阳极之间的电场成直角的磁场的磁体。 还提供了一种微波炉，用于通过使用磁控管作为微波供应源来介质加热被加热物质。

公开(公告)号：US06570305B1

公开(公告)日：2003-05-27

申请号：US09339226

申请日：1999-06-24

申请人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

发明人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

IPC分类号： H01J102

CPC分类号： H01J3/022 ,  H01J1/3044

摘要： A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.

摘要翻译： 使用硅衬底作为衬底，其上形成有圆锥形突起作为阴极。 栅极通过形成在基板上的绝缘膜布置。 栅电极形成为围绕阴极，阴极的尖部和栅电极的表面涂覆有两层涂膜。

公开(公告)号：US06294440B1

公开(公告)日：2001-09-25

申请号：US09289575

申请日：1999-04-09

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

IPC分类号： H01L2120

CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

公开(公告)号：US5907470A

公开(公告)日：1999-05-25

申请号：US870629

申请日：1997-06-06

申请人： Ryusuke Kita ,  Yoshiyuki Masuda ,  Yoshiyuki Matsu ,  Noboru Ohtani ,  Seiki Yano

发明人： Ryusuke Kita ,  Yoshiyuki Masuda ,  Yoshiyuki Matsu ,  Noboru Ohtani ,  Seiki Yano

IPC分类号： C01G23/00 ,  C23C14/08 ,  C23C14/34 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01G4/06

CPC分类号： H01G4/33 ,  H01G4/1227 ,  H01L28/40

摘要： The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

摘要翻译： 本发明提供一种电介质薄膜电容器元件，其中可以抑制泄漏电流随着时间的推移而在高温下通电并且具有优异的绝缘质量和可靠性及其制造方法。 电介质薄膜电容器元件通过在基板上依次形成下电极，电介质薄膜和上电极而构成，其特征在于，所述电介质薄膜由氧化物材料 由至少钛和锶组成并含有铒。

公开(公告)号：US4771432A

公开(公告)日：1988-09-13

申请号：US835471

申请日：1986-03-03

申请人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Hiroshi Hayashi

发明人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Hiroshi Hayashi

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/24 ,  H01S5/20 ,  H01S5/305 ,  H01S5/10 ,  H01S5/2059 ,  H01S5/2234 ,  H01S5/3054 ,  H01S5/32308

摘要： A semiconductor laser comprising a middle-positioned active layer sandwiched between the lower-positioned active layer and the upper-positioned active layer, the refractivity of each of said lower- and upper- positioned active layers being slightly different from that of the middle-positioned active layer.

摘要翻译： 一种半导体激光器，包括夹在下位有源层和上位有源层之间的中间有源层，每个所述下位置和上位有源层的折射率与中间定位有源层略有不同 活动层

公开(公告)号：US4694461A

公开(公告)日：1987-09-15

申请号：US700018

申请日：1985-02-08

申请人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Mototaka Taneya

发明人： Seiki Yano ,  Saburo Yamamoto ,  Sadayoshi Matsui ,  Mototaka Taneya

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/2231

摘要： A semiconductor laser array includes a p-GaAs substrate, a p-Ga.sub.1-x Al.sub.x As cladding layer, a Ga.sub.1-y Al.sub.y As active layer, an n-Ga.sub.1-z Al.sub.z As optical guide layer, an n-Ga.sub.1-x Al.sub.x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed in the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga.sub.1-z Al.sub.z As optical guide layer. A Ga.sub.1-b Al.sub.b As high resistance layer is filled in the plurality of stripe shaped grooves so that injecting current is divided into a plurality of paths, and each laser emitting region is optically, phase coupled to each other with a phase difference of zero degree.

摘要翻译： 半导体激光器阵列包括p-GaAs衬底，p-Ga1-xAlxAs包层，Ga1-yAlyAs有源层，n-Ga1-zAlzAs光导层，n-Ga1-xAlxAs覆层和n-GaAs 盖层由液相外延生长法形成。 在n-GaAs覆盖层的表面上形成多个条状槽，使得槽的底部到达n-Ga1-zAlzAs光导层的中间。 GaI-bAlbAs高电阻层填充在多个条形槽中，使得注入电流被分成多个路径，并且每个激光发射区域以0度的相位差彼此光学地相互耦合。

公开(公告)号：US5208468A

公开(公告)日：1993-05-04

申请号：US727375

申请日：1991-07-05

申请人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

发明人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

IPC分类号： H01S5/02 ,  H01S5/028

CPC分类号： H01S5/0281 ,  H01S5/028 ,  H01S5/0201 ,  H01S5/0282 ,  H01S5/0283

摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.

摘要翻译： 公开了从小面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和 保护膜。

公开(公告)号：US4899359A

公开(公告)日：1990-02-06

申请号：US283013

申请日：1988-12-08

申请人： Seiki Yano ,  Toshiki Hijikata

发明人： Seiki Yano ,  Toshiki Hijikata

IPC分类号： G11B7/125 ,  H01S5/00 ,  H01S5/026 ,  H01S5/223 ,  H01S5/24 ,  H01S5/40

CPC分类号： G11B7/127 ,  H01S5/4031 ,  H01S5/2232 ,  H01S5/24

摘要： An optical memory semiconductor laser apparatus incorporating a recording semiconductor laser device for an optical memory and a replaying semiconductor laser device for an optical memory therein into a single body, wherein the oscillation threshold current of replaying semiconductor laser device is smaller than that of recording semiconductor laser device.

摘要翻译： 一种将用于光学存储器的记录半导体激光器件和用于其中的光学存储器的重放半导体激光器件结合到单体中的光学存储器半导体激光器装置，其中重放半导体激光器件的振荡阈值电流小于记录半导体激光器的振荡阈值电流 设备。

公开(公告)号：US4862473A

公开(公告)日：1989-08-29

申请号：US105585

申请日：1987-10-08

申请人： Seiki Yano ,  Toshiki Hijikata

发明人： Seiki Yano ,  Toshiki Hijikata

IPC分类号： H01S5/00 ,  H01S3/109 ,  H01S5/06

CPC分类号： H01S5/026 ,  H01S5/0604 ,  H01S5/22

摘要： A semiconductor laser apparatus includes a groove of a specified length that is formed by etching an end portion of a semiconductor laser element, and a higher harmonic generating device having a waveguide of approximately the same cross-sectional dimensions as the dimensions of the resonator that is mounted in the semiconductor laser element. The higher harmonic generating device is secured by being fused in the groove with the optical axis of the waveguide coinciding with the optical axis of the resonator.

摘要翻译： 半导体激光装置包括通过蚀刻半导体激光元件的端部而形成的规定长度的槽，以及具有与谐振器的尺寸大致相同的横截面尺寸的波导的高次谐波发生装置 安装在半导体激光元件中。 高次谐波发生装置通过熔合在凹槽中而固定，波导的光轴与谐振器的光轴重合。