公开(公告)号：US06294440B1

公开(公告)日：2001-09-25

申请号：US09289575

申请日：1999-04-09

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

IPC分类号： H01L2120

CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

公开(公告)号：US06765233B2

公开(公告)日：2004-07-20

申请号：US09904162

申请日：2001-07-11

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

IPC分类号： H01L2715

CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

摘要翻译： 本发明的半导体衬底的制造方法包括以下步骤：在下基板上形成含有具有生长抑制作用的材料的第一图案掩模; 通过第一图案化掩模在下基板上生长半导体晶体以形成第一半导体晶体层; 形成第二图案化掩模，其包含在下基板上或上方具有生长抑制作用的材料，所述第二图案化掩模至少具有位于与第一图案化掩模的表面的水平不同的水平面的表面，相对于 到下基板的表面; 以及经由所述第二图案化掩模在所述下基板上或上方生长半导体晶体以形成第二半导体晶体层。

公开(公告)号：US07579627B2

公开(公告)日：2009-08-25

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/12

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US07515621B2

公开(公告)日：2009-04-07

申请号：US11702625

申请日：2007-02-06

申请人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

发明人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/2231 ,  H01S5/34333

摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

摘要翻译： 氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。 量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。 阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。 第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

公开(公告)号：US06881981B2

公开(公告)日：2005-04-19

申请号：US10250617

申请日：2001-12-27

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito

IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/145 ,  H01S5/32341 ,  H01S5/34333

摘要： In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate (101) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer (102) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer (106) including at least one quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.

摘要翻译： 在氮化物半导体发光器件芯片中，氮化物半导体衬底（101）上的掩模图案由氮化物半导体层难以生长的生长抑制膜形成。 没有提供生长抑制膜的多个窗口。 至少两个不同的宽度作为每个相邻窗口之间的掩模宽度。 掩模图案包括布置在掩模A组的相应侧上的掩模A组（MAG）和掩模B组（MBG）。 掩模掩模A组中的宽度比掩模B组中的掩码B宽度宽。 氮化物半导体发光器件芯片还包括覆盖窗口和掩模图案的氮化物半导体底层（102）和发光器件结构，其具有发光层（106），发光层（106）包括在n型层之间的至少一个量子阱层 （103-105）和ap型层（107-110）。 在掩模A上方形成有通过其将大量电流引入发光层的电流限制部分（RS）。

公开(公告)号：US06399966B1

公开(公告)日：2002-06-04

申请号：US09947346

申请日：2001-09-07

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  G11B7/127 ,  H01L33/325 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34333

摘要： There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.

公开(公告)号：US20070297476A1

公开(公告)日：2007-12-27

申请号：US11702625

申请日：2007-02-06

申请人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

发明人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

IPC分类号： H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/2231 ,  H01S5/34333

摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

摘要翻译： 氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。 量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。 阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。 第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

公开(公告)号：US20050141577A1

公开(公告)日：2005-06-30

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US06909120B2

公开(公告)日：2005-06-21

申请号：US10415699

申请日：2001-11-05

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/343 ,  H01L27/15

CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz (0

摘要翻译： 根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。 阱层由包含In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。 根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。 阱层由GaN 1-xy-z x z z z z z z z z z z z z z z z z z 并且阻挡层由含有In的氮化物半导体形成。

公开(公告)号：US06614824B2

公开(公告)日：2003-09-02

申请号：US09950576

申请日：2001-09-13

申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Toshiyuki Okumura

发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Toshiyuki Okumura

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/04

摘要： A nitride semiconductor laser device having a low threshold current and low noise is provided. The laser device includes n-type and p-type layers made of nitride semiconductor and formed on a substrate, and a light emitting layer between the n-type and p-type layers. The light emitting layer is formed of a well layer or a combination of well and barrier layers. At least the well layer is made of nitride semiconductor containing element X, N and Ga, wherein element is at least one selected from the group consisting of As, P and Sb. The atomic fraction of element X is smaller than that of N. A maximum width through which current is injected into the light emitting layer via the p-type layer is from 1.0 &mgr;m to 4.0 &mgr;m.