摘要:
A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.
摘要:
An OBO planar waveguide device includes an Si substrate, an SiO2 layer formed on the Si substrate, and a plurality of Si optical waveguides provided on the Si substrate in parallel to each other. A heater and a heat sink are provided on opposing side end portions of the Si substrate respectively. As a result of a function of the heater and the heat sink, gradient of temperature distribution of the Si substrate is formed in a direction in which the plurality of Si optical waveguides are aligned. Thermal resistance of the Si substrate in the direction in which the gradient of temperature distribution is formed is greater than 20 K/W and lower than 2000 K/W. The OBO planar waveguide device attaining reduced power consumption is thus obtained.
摘要:
A photonic crystal and a producing method thereof are provided. The photonic crystal includes at least two media of different refractive indices formed on a semiconductor substrate. One of the media is periodically arranged in another one of the media. The photonic crystal has a cleaved surface on its side. The directions of primitive translation vectors representing the periodic arrangement directions of the one medium are at desired angles with the cleaved surface. Preferably, the direction of at least one of the primitive translation vectors is in parallel with the cleaved surface.
摘要:
A driver circuit substrate is prepared and a mirror substrate is so provided as to be placed on the driver circuit substrate. Nine mirror elements are lad out on the mirror substrate in a 3×3 matrix form. The mirror elements are prepared by a microelectromechanical system (MEMS). An insulating substrate is provided on the driver circuit substrate and a driver circuit which drives a light reflecting mirror element is provided on the insulating substrate. The driver circuit substrate is connected to the mirror substrate via a resin layer of a thermosetting adhesive or the like.
摘要:
A gallium nitride type semiconductor laser device includes: a substrate; and a layered structure formed on the substrate. The layered structure at least includes an active layer of a nitride type semiconductor material which is interposed between a pair of nitride type semiconductor layers each functioning as a cladding layer or a guide layer. A current is injected into a stripe region in the layered structure having a width smaller than a width of the active layer. The width of the stripe region is in a range between about 0.2 &mgr;m and about 1.8 &mgr;m.
摘要:
A video recording/reproduction system is equipped with a magnetic disk drive, which records and reproduces video data on a magnetic disk by driving a magnetic head. Herein, the magnetic disk drive is controlled by a CPU in accordance with control programs, while a host machine is provided to perform a variety of controls regarding recording and reproduction in accordance with commands being given by manipulation of an operation panel. The magnetic disk drive is characterized by performing a reassignment process and/or calibration such as to suppress reduction of throughput of video data. That is, if the CPU fails to access a target sector of the magnetic disk so that the target sector is regarded as a defect sector, the CPU makes a decision whether to perform the reassignment process based on transfer speeds and vacant capacity of a buffer memory built in the magnetic disk drive. If transferring data of the host machine overflow the buffer memory by execution of the reassignment process, the CPU temporarily refuges the data to a storage, then, after completion of recording or reproduction, the CPU performs the reassignment process again. Further, the magnetic disk drive performs calibration only when a time margin between a present time and a start time of reserved recording is greater that a calibration time. Thus, it is possible to avoid occurrence of breaks by which pictures being recorded or reproduced are interrupted intermittently. So, it is possible to improve reliability and picture quality in recording and reproduction.
摘要:
A nitride semiconductor laser device having a low threshold current and low noise is provided. The laser device includes n-type and p-type layers made of nitride semiconductor and formed on a substrate, and a light emitting layer between the n-type and p-type layers. The light emitting layer is formed of a well layer or a combination of well and barrier layers. At least the well layer is made of nitride semiconductor containing element X, N and Ga, wherein element is at least one selected from the group consisting of As, P and Sb. The atomic fraction of element X is smaller than that of N. A maximum width through which current is injected into the light emitting layer via the p-type layer is from 1.0 &mgr;m to 4.0 &mgr;m.
摘要:
A performance evaluation method of an MR head whereby resolution performance of an MR head can be estimated, an isolated repreoduction wave form V(t) of the MR head is approximated by an equation V(t)=1/(1+(2t/PW50).sup.P), t denoting time difference from a timing which gives a peak value of the isolated reproduction wave form V(t), and PW50 denoting a half-peak-width where the isolated reproduction wave form V(t) shows more than 50% of the peak value. The resolution performance of the MR head is evaluated according to the order value P of the above equation which gives the most likelihood approximation of the isolated wave form, together with the half-peak-width PW50 relative to a minimum bit-interval to be reproduced by the MR head.
摘要:
A semiconductor laser device includes: a lower cladding layer; an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom; a II-VI compound semiconductor active layer interposed between the lower cladding layer and the upper cladding layer; and a burying blocking layer made of an aromatic polyamide resin formed on a bottom of the upper cladding layer so as to be in contact with sides of the stripe-shaped ridge portion.
摘要:
A method for erasing information recorded on a magnetic tape by a magnetic erase head having a magnetic core having a magnetic gap of a predetermined width and a coil wound on the core. An erasing current is flown through the coil to generate an erasing magnetic field above the magnetic gap. The magnetic field generated by that current has a profile defined by a first zero point, first and second peak points, and a second zero point above the magnetic erase head. The magnetic tape having information recorded therein through the magnetic field is moved above the magnetic erase head. The frequency of the erasing current and a moving speed of the magnetic tape relative to the magnetic erase head are set such that the magnetic field changes in phase at least three times during a time in which the magnetic tape is moved in a moving direction of the magnetic tape by a distance which is determined by the first zero point and the first peak point of the magnetic field profile.