发明授权
- 专利标题： Method of fabricating a semiconductor laser device
- 专利标题（中）： 制造半导体激光器件的方法
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申请号： US521905申请日： 1995-08-31
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公开(公告)号： US5658824A公开(公告)日： 1997-08-19
- 发明人: Shigetoshi Itoh , Toshiyuki Okumura
- 申请人： Shigetoshi Itoh , Toshiyuki Okumura
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX6-206928 19940831
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/12 ; H01L33/14 ; H01L33/28 ; H01L33/44 ; H01S5/00 ; H01S5/22 ; H01S5/223 ; H01S5/327 ; H01S5/347 ; H01L21/203
摘要：
A semiconductor laser device includes: a lower cladding layer; an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom; a II-VI compound semiconductor active layer interposed between the lower cladding layer and the upper cladding layer; and a burying blocking layer made of an aromatic polyamide resin formed on a bottom of the upper cladding layer so as to be in contact with sides of the stripe-shaped ridge portion.
公开/授权文献
- US4986544A Golf putter 公开/授权日：1991-01-22
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