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34 条记录 (耗时 0.018 秒)

    Method for producing a semiconductor substrate
    1.
    发明授权
    Method for producing a semiconductor substrate 有权
    半导体基板的制造方法

    公开(公告)号：US06586316B2

    公开(公告)日：2003-07-01

    申请号：US10087889

    申请日：2002-03-01

    申请人： Yuhzoh Tsuda ,  Shingetoshi Ito ,  Seiki Yano

    发明人： Yuhzoh Tsuda ,  Shingetoshi Ito ,  Seiki Yano

    IPC分类号： H01L2120

    CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

    摘要： A method for producing a semiconductor substrate includes the steps of: forming a first patterned mask containing a material having a growth suppressing effect on a substrate; growing a first nitride semiconductor on a portion of the substrate corresponding to an opening portion of the first patterned mask; forming a second patterned mask containing a material having a growth suppressing effect only on a main surface of the first nitride semiconductor which is positioned above the opening portion of the first patterned mask; and growing a semiconductor crystal substantially from the side surface of the first nitride semiconductor so as to form a second nitride semiconductor which integrally includes the first patterned mask and the second patterned mask.

    摘要翻译： 一种制造半导体衬底的方法包括以下步骤：在衬底上形成含有具有生长抑制作用的材料的第一图案化掩模; 在对应于第一图案化掩模的开口部分的衬底的一部分上生长第一氮化物半导体; 形成第二图案掩模，其包含仅在位于第一图案化掩模的开口部分上方的第一氮化物半导体的主表面上具有生长抑制作用的材料; 以及从所述第一氮化物半导体的侧表面生长半导体晶体，以形成一体地包括所述第一图案化掩模和所述第二图案化掩模的第二氮化物半导体。

    System for transmitting a beam in the air
    2.
    发明授权
    System for transmitting a beam in the air 失效
    用于在空中传输光束的系统

    公开(公告)号：US5457561A

    公开(公告)日：1995-10-10

    申请号：US101080

    申请日：1993-08-04

    申请人： Mototaka Taneya ,  Seiki Yano ,  Haruhisa Takiguchi ,  Atsushi Shimonaka ,  Tatsuya Morioka ,  Hidenori Kawanishi

    发明人： Mototaka Taneya ,  Seiki Yano ,  Haruhisa Takiguchi ,  Atsushi Shimonaka ,  Tatsuya Morioka ,  Hidenori Kawanishi

    IPC分类号： H04B10/61 ,  H04B10/079 ,  H04B10/11 ,  H04B10/116 ,  H04B10/293 ,  H04B10/516 ,  H04B10/556 ,  H04B10/564 ,  H04B10/572 ,  H04B10/00

    CPC分类号： H04B10/1121

    摘要： A system for transmitting information with a coherent beam being propagatable in the air is arranged to include a transmitting device having a modulator and an emitting circuit and a receiving device having a generator, a mixer, a frequency discriminating circuit, and reproducing circuit. The modulator modulates a reference light frequency (wavelength) or phase of a coherent beam to be emitted from a light source according to the signal. The emitting circuit emits the modulated beam as a divergent beam having such a power density as being safe to human eyes. The generator generates a coherent locally oscillated beam. The mixer mixes the signal beam with the locally oscillated beam and photoelectric-converts the mixed beam. The frequency discriminating circuit frequency-discriminates the a.c. component of the photoelectric-converted output. The reproducing circuit reproduces a signal from the output of frequency discriminating circuit. Any one of the transmitting device and the receiving device has a function of keeping a relative light frequency difference (wavelength difference) between the signal beam and the locally oscillated beam constant.

    摘要翻译： 用于在空气中传播的相干光束传输信息的系统被布置成包括具有调制器和发射电路的发射装置和具有发生器，混频器，鉴频电路和再现电路的接收装置。 调制器根据信号调制要从光源发射的相干光束的参考光频率（波长）或相位。 发射电路发射调制束作为具有对人眼安全的功率密度的发散光束。 发生器产生相干局部振荡光束。 混合器将信号光束与局部振荡光束混合，并对混合光束进行光电转换。 频率鉴别电路对a.c.进行频率鉴别。 光电转换输出的分量。 再现电路从频率鉴别电路的输出再现信号。 发送装置和接收装置中的任一个具有保持信号光束与局部振荡光束之间的相对光频差（波长差）恒定的功能。

    Window structure semiconductor laser
    7.
    发明授权
    Window structure semiconductor laser 失效
    窗结构半导体激光器

    公开(公告)号：US4546481A

    公开(公告)日：1985-10-08

    申请号：US476844

    申请日：1983-03-18

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/24 ,  H01S5/16 ,  H01S5/2234

    摘要： A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.

    摘要翻译： 窗口V沟道衬底内条半导体激光器，其包括形成在受激区域的两端的窗口区域。 受激区域包括新月活性层，并且每个窗口区域包括用于将从被刺激区域发射的激光束传送到反射镜的平面有源层。 窗口区域确保激光振荡的稳定操作和用于灾难性光学损伤的高光功率。

    Semiconductor substrate, light emitting device, and method for producing the same
    8.
    发明授权
    Semiconductor substrate, light emitting device, and method for producing the same 有权
    半导体衬底，发光器件及其制造方法

    公开(公告)号：US06765233B2

    公开(公告)日：2004-07-20

    申请号：US09904162

    申请日：2001-07-11

    申请人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

    发明人： Yuhzoh Tsuda ,  Shigetoshi Ito ,  Seiki Yano

    IPC分类号： H01L2715

    CPC分类号： H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

    摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.

    摘要翻译： 本发明的半导体衬底的制造方法包括以下步骤：在下基板上形成含有具有生长抑制作用的材料的第一图案掩模; 通过第一图案化掩模在下基板上生长半导体晶体以形成第一半导体晶体层; 形成第二图案化掩模，其包含在下基板上或上方具有生长抑制作用的材料，所述第二图案化掩模至少具有位于与第一图案化掩模的表面的水平不同的水平面的表面，相对于 到下基板的表面; 以及经由所述第二图案化掩模在所述下基板上或上方生长半导体晶体以形成第二半导体晶体层。

    Field emission electron source and fabrication process thereof
    9.
    发明授权
    Field emission electron source and fabrication process thereof 失效
    场发射电子源及其制造工艺

    公开(公告)号：US06570305B1

    公开(公告)日：2003-05-27

    申请号：US09339226

    申请日：1999-06-24

    申请人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

    发明人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

    IPC分类号： H01J102

    CPC分类号： H01J3/022 ,  H01J1/3044

    摘要： A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.

    摘要翻译： 使用硅衬底作为衬底，其上形成有圆锥形突起作为阴极。 栅极通过形成在基板上的绝缘膜布置。 栅电极形成为围绕阴极，阴极的尖部和栅电极的表面涂覆有两层涂膜。