公开(公告)号：US6023293A

公开(公告)日：2000-02-08

申请号：US813709

申请日：1997-03-07

申请人： Takashi Watanabe ,  Hiroaki Kudo

发明人： Takashi Watanabe ,  Hiroaki Kudo

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/376 ,  H04N3/14 ,  H04N9/083

CPC分类号： H01L27/14643

摘要： In the active type solid-state imaging device of the present invention, the image sensor portion and the driving circuit portion which drives the image sensor portion or conducts signal processing are formed in separate semiconductor regions in the identical semiconductor substrate.

摘要翻译： 在本发明的有源型固体摄像器件中，驱动图像传感器部分或传导信号处理的图像传感器部分和驱动电路部分形成在相同半导体衬底中的分离的半导体区域中。

公开(公告)号：US5861645A

公开(公告)日：1999-01-19

申请号：US820800

申请日：1997-02-04

申请人： Hiroaki Kudo ,  Takashi Watanabe

发明人： Hiroaki Kudo ,  Takashi Watanabe

IPC分类号： H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/353 ,  H04N5/355 ,  H04N5/359 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745

CPC分类号： H01L31/1136 ,  H01L27/14609 ,  H01L27/14643

摘要： An amplifying type solid-state imaging device having a transistor formed on a semiconductor base and a charge release portion which stores a signal charge which is generated by light incident on the transistor and outputs a change of an electrical signal in accordance with the stored charge. The transistor includes: a first gate region including a portion for storing the signal charge therein and a first gate electrode formed on the semiconductor base surface; and a source and a drain formed of impurity layers of a higher concentration than the semiconductor base concentration. The charge release portion includes: a second gate region including a portion in the vicinity of the semiconductor base surface, and a second gate electrode formed via an insulating film on the semiconductor base surface; and a drain for charge discharge formed of an impurity layer of a higher concentration than the semiconductor base concentration. The stored signal charge is released to the drain for charge discharge of the charge release portion.

摘要翻译： 一种放大型固体摄像器件，具有形成在半导体基底上的晶体管和电荷释放部分，其存储由入射到晶体管上的光产生的信号电荷，并根据存储的电荷输出电信号的变化。 晶体管包括：包括用于在其中存储信号电荷的部分的第一栅极区域和形成在半导体基底表面上的第一栅电极; 以及由比半导体基底浓度高的杂质层形成的源极和漏极。 电荷释放部分包括：包括在半导体基底表面附近的部分的第二栅极区域和经由半导体基底表面上的绝缘膜形成的第二栅电极; 以及由比半导体基底浓度高的浓度的杂质层形成的用于电荷放电的漏极。 存储的信号电荷被释放到漏极，用于充电释放部分的充电放电。

公开(公告)号：US5654557A

公开(公告)日：1997-08-05

申请号：US249051

申请日：1994-05-25

申请人： Mototaka Taneya ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Haruhisa Takiguchi

发明人： Mototaka Taneya ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Haruhisa Takiguchi

IPC分类号： H01L21/20 ,  H01L29/06 ,  H01L29/12 ,  H01L29/80 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34 ,  H01L27/12 ,  H01L45/00

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01S5/341

摘要： A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.

摘要翻译： 量子线结构包括第一层，其厚度足够小于介质中的电子波的德布罗意波长，第二层和第三层，其设置在第一层上和下面，并且分别具有较大的禁带宽度 其中第一层具有相对较小曲率的区域和其横截面具有相对较大曲率的区域，并且具有较小曲率的区域的宽度为50nm以下。

公开(公告)号：US5070510A

公开(公告)日：1991-12-03

申请号：US625169

申请日：1990-12-10

申请人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

发明人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/227 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/4031 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2059 ,  H01S5/2201 ,  H01S5/2213 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/4037

摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

公开(公告)号：US5027368A

公开(公告)日：1991-06-25

申请号：US394327

申请日：1989-08-16

申请人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Chitose Sakane ,  Satoshi Sugahara

发明人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Chitose Sakane ,  Satoshi Sugahara

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/24

CPC分类号： H01S5/12 ,  H01S5/24

摘要： A semiconductor laser device with a resonator containing an active region for laser oscillating operation is disclosed which comprises a third-order diffraction grating with a periodic corrugation for producing feedback of laser light, the corrugation being of substantially rectangular shape, wherein the ratio of the width of each convex portion of the corrugation to the periodicity of the corrugation is in the range of 0.20 to 0.25, 0.40 to 0.60, or 0.70 to 0.95.

公开(公告)号：US4862472A

公开(公告)日：1989-08-29

申请号：US143730

申请日：1988-01-14

申请人： Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Chitose Sakane ,  Toshihiko Yoshida

发明人： Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Chitose Sakane ,  Toshihiko Yoshida

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/2231 ,  H01S5/0421 ,  H01S5/2206 ,  H01S5/3211 ,  H01S5/32316 ,  H01S5/32391

摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, and a stripe structure that is disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer with a conductive type different from that of the adjacent cladding layer, and the current blocking layer having a striped groove constituting a current path, wherein the cladding layer that contacts the current blocking layer is composed of an In.sub.1-s Ga.sub.s P.sub.1-t As.sub.t crystal material (wherein 0.51.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1 and s=2.04t-1.04).

公开(公告)号：US4858215A

公开(公告)日：1989-08-15

申请号：US95566

申请日：1987-09-10

申请人： Seiki Yano ,  Hiroaki Kudo ,  Haruhisa Takiguchi ,  Toshiki Hijikata ,  Shinji Kaneiwa

发明人： Seiki Yano ,  Hiroaki Kudo ,  Haruhisa Takiguchi ,  Toshiki Hijikata ,  Shinji Kaneiwa

IPC分类号： G02B6/122 ,  G11B7/09 ,  G11B7/12

CPC分类号： G11B7/1384 ,  G11B7/0912 ,  G11B7/124

摘要： An integrated optical disc pickup comprising an optical waveguide in the form of a insulation layer provided on the surface of a substrate, a semiconductor laser disposed outside the waveguide, a beam splitter of the transmission type and a Luneburg lens provided on the path of propagation of a laser beam from the semiconductor laser through the waveguide and arranged in the order mentioned in a direction away from the laser, a transmission grating provided on the path through the waveguide to be followed by the laser beam upon having its direction changed by the beam splitter after emanating from the laser, passing through the beam splitter and the Luneburg lens, being reflected from an optical disc disposed outside the waveguide and passing through the Luneburg lens, and first and second photodetectors disposed on the paths of propagation through the waveguide of two portions of the laser beam divided by the diffraction grating.

公开(公告)号：US4849985A

公开(公告)日：1989-07-18

申请号：US104315

申请日：1987-10-02

申请人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo

发明人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40

CPC分类号： H01S5/12 ,  H01S5/1082 ,  H01S5/4031

摘要： A distributed feedback semiconductor laser device comprising a laser oscillation region and a distributed reflector which are provided in a laminated crystal structure, and comprising facets at both the ends, wherein a light emitting face is disposed at one or both ends of the laser oscillation region, the face being parallel to the lamination direction and intersecting with the light emitting direction at an angle which is 90 degrees minus the Bresster angle.

摘要翻译： 一种分布式反馈半导体激光器件，包括激光振荡区域和分布式反射器，其设置在层叠晶体结构中，并且包括在两端的刻面，其中发光面设置在激光振荡区域的一端或两端， 该面平行于层叠方向，并以90度减去Bresster角度的角度与发光方向相交。

公开(公告)号：US4830599A

公开(公告)日：1989-05-16

申请号：US67887

申请日：1987-06-30

申请人： Takeshi Okusau ,  Manabu Sakamoto ,  Hiroaki Kudo

发明人： Takeshi Okusau ,  Manabu Sakamoto ,  Hiroaki Kudo

IPC分类号： B29C51/08 ,  B29C51/30

CPC分类号： B29C51/30 ,  B29C51/08

摘要： A molding device for molding or shaping a plastically moldable sheet includes a lower mold having a recess which extends along an inner wall of the lower mold, an upper mold having a raised portion which is neatly received in the recess of the lower mold when the upper mold is properly seated on the lower mold to press the sheet, and a sheet mover including a rotatable member which is rotatably arranged on the outer wall of the lower mold and partially exposed to the recess of the lower mold.

摘要翻译： 用于模制或成形可模塑塑料片材的模制装置包括具有沿着下模具的内壁延伸的凹部的下模具，上模具具有整齐地容纳在下模具的凹部中的凸起部分， 模具适当地安置在下模具上以挤压片材，以及片材移动器，其包括可旋转地布置在下模具的外壁上并且部分地暴露于下模具的凹部的可旋转构件。

公开(公告)号：US5780884A

公开(公告)日：1998-07-14

申请号：US744618

申请日：1996-11-06

申请人： Kazuya Kumagai ,  Hiroaki Kudo

发明人： Kazuya Kumagai ,  Hiroaki Kudo

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3745 ,  H01L29/78

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： The amplification type solid-state imaging device of this invention includes amplification type photoelectric converting elements arranged in a matrix. Each of the amplification type photoelectric converting elements includes: a transistor formed at a surface of a semiconductor substrate, for accumulating signal charge generated from incident light on a portion of the transistor at the surface of the semiconductor substrate and outputting an output signal comprising a change in an electric signal corresponding to the accumulated signal charge; a gate region formed adjacent to the transistor, including a portion of the semiconductor substrate, an insulating film formed on the portion of the semiconductor substrate, and a gate electrode formed on the insulating film, the gate region allowing the accumulated signal charge to move from the surface of the semiconductor substrate to the inside of the semiconductor substrate; and an output impedance converting section connected to the photoelectric converting elements which sequentially receives the output signals from the amplification type photoelectric converting elements, the output impedance converting section including a driving transistor driven with the output signals and a load transistor.

摘要翻译： 本发明的放大型固态成像装置包括以矩阵形式布置的放大型光电转换元件。 每个放大型光电转换元件包括：晶体管，形成在半导体衬底的表面处，用于将从入射光产生的信号电荷累积在半导体衬底的表面上的晶体管的一部分上，并输出包括变化的输出信号 在与所累积的信号电荷相对应的电信号中; 与晶体管相邻形成的栅极区域，包括半导体衬底的一部分，形成在半导体衬底的部分上的绝缘膜和形成在绝缘膜上的栅电极，栅极区域允许累积的信号电荷从 半导体衬底的表面到半导体衬底的内部; 以及连接到光电转换元件的输出阻抗转换部分，其顺序地接收来自放大型光电转换元件的输出信号，输出阻抗转换部分包括用输出信号驱动的驱动晶体管和负载晶体管。