公开(公告)号：US20130060032A1

公开(公告)日：2013-03-07

申请号：US13648793

申请日：2012-10-10

申请人： Koji HAGIYA ,  Kazuaki SASAKI

发明人： Koji HAGIYA ,  Kazuaki SASAKI

IPC分类号： C09K3/00 ,  C07C67/14 ,  C07C17/20 ,  C07D239/30 ,  C07C51/58 ,  C07C201/12

CPC分类号： C07B39/00 ,  C01D3/02 ,  C07C17/208 ,  C07C67/14 ,  C07C201/12 ,  C07C22/08 ,  C07C69/76 ,  C07C205/12

摘要： A potassium fluoride dispersion essentially consisting of potassium fluoride and an aprotic organic solvent having a boiling point higher than that of methanol, which is obtainable by mixing a mixture containing potassium fluoride and 5 to 50 parts by weight of methanol per 1 part by weight of potassium fluoride with the aprotic organic solvent followed by concentrating the obtained mixture, and a process for producing a fluorine-containing organic compound comprising contacting an organic compound having at least one group capable of being substituted nucleophilically with a fluorine atom with the potassium fluoride dispersion.

摘要翻译： 基本上由氟化钾和沸点高于甲醇的非质子有机溶剂组成的氟化钾分散液，其通过将含有氟化钾的混合物和5至50重量份的甲醇混合，每1重量份的钾 用非质子有机溶剂氟化，然后浓缩所得混合物，以及含氟有机化合物的制备方法，包括使具有至少一个能够被氟原子取代的基团的有机化合物与氟原子分散体接触。

公开(公告)号：US20070161897A1

公开(公告)日：2007-07-12

申请号：US10557237

申请日：2004-05-18

申请人： Kazuaki Sasaki ,  Takashi Azuma ,  Ken-ichi Kawabata ,  Shin-ichiro Umemura ,  Takashi Okai ,  Tetsuya Ishikawa

发明人： Kazuaki Sasaki ,  Takashi Azuma ,  Ken-ichi Kawabata ,  Shin-ichiro Umemura ,  Takashi Okai ,  Tetsuya Ishikawa

IPC分类号： A61B8/00

CPC分类号： A61N7/02 ,  A61B8/06 ,  A61B8/13 ,  A61B2090/378

摘要： Ultrasonic treatment equipment is provided which repeats therapeutic ultrasound exposure while measuring a degree of vessel constriction on a therapeutic ultrasound exposure basis. This equipment includes: a therapeutic ultrasonic transducer 2 which exposes a blood vessel of an affected part to a focused therapeutic ultrasonic wave for a specified period of exposure time; an imaging ultrasonic probe 3 which images an ultrasound tomographic image of the affected part; a display unit 24 which displays the ultrasound tomographic image; means 21 for detecting a blood flow signal from a signal received by the imaging ultrasonic probe and determining the blood flow velocity of the blood vessels of the affected part; means 21 for calculating a rate of change in blood flow velocity during the exposure to the therapeutic ultrasonic wave or before and after the exposure to the therapeutic ultrasonic wave; and means 23 for controlling exposure conditions of the therapeutic ultrasonic wave on the basis of the rate of change in blood flow velocity, and thereby controlling the therapeutic ultrasonic transducer.

摘要翻译： 提供超声波处理设备，其在治疗超声暴露基础上测量血管收缩程度时重复治疗性超声波暴露。 该设备包括：治疗超声波换能器2，其将受影响部分的血管暴露于聚焦的治疗超声波达指定的曝光时间; 成像超声波探头3，其对受影响部分的超声断层图像进行成像; 显示单元24，其显示超声断层图像; 用于从由成像超声波探头接收的信号中检测血流信号并确定受影响部分的血管的血流速度的装置21; 用于计算暴露于治疗超声波期间或暴露于治疗超声波之前和之后的血流速度变化率的装置21; 以及基于血流速度变化率来控制治疗超声波的暴露条件的装置23，由此控制治疗用超声波换能器。

公开(公告)号：US20050093428A1

公开(公告)日：2005-05-05

申请号：US10969015

申请日：2004-10-21

申请人： Kazuaki Kaneko ,  Hiroshi Umeda ,  Kazuaki Sasaki ,  Junichi Nakamura

发明人： Kazuaki Kaneko ,  Hiroshi Umeda ,  Kazuaki Sasaki ,  Junichi Nakamura

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H05B33/00 ,  H05B33/14

CPC分类号： H01L33/145 ,  H01L2224/48463 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.

摘要翻译： 半导体发光器件包括：半导体衬底; 形成在所述半导体基板上的发光层; 形成在用于限制发光的发光层的一部分上的电流阻挡层; 形成在电流阻挡层和发光层的另一部分上的电流扩散层; 形成在电流扩展层上的前电极; 以及形成在半导体基板的后侧的后电极。 电流阻挡层由中心区域和外部区域构成，该区域通过电流扩展层的一部分围绕中心区域，使得出现在器件的前表面上的发光区域具有环形形状 。 电流阻挡层的前电极和中心区域彼此相对。

公开(公告)号：US06849473B2

公开(公告)日：2005-02-01

申请号：US10253609

申请日：2002-09-25

申请人： Kazuaki Sasaki ,  Junichi Nakamura ,  Shouichi Ohyama

发明人： Kazuaki Sasaki ,  Junichi Nakamura ,  Shouichi Ohyama

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/38 ,  H01L21/00

CPC分类号： H01L33/145 ,  H01L33/14 ,  H01L33/30

摘要： In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.

摘要翻译： 在半导体发光器件中，在n-GaAs衬底上堆叠n-GaAs缓冲层，n包层，未掺杂有源层，p包层，p中间带隙层和p 电流扩散层。 此外，在n-GaAs衬底下形成第一电极，在生长层侧形成第二电极。 在该工序中，除去刚好在第二电极正下方的p中间带隙层的区域，p电流扩散层层叠在p包覆层的去除区域中，p电流的结面 由于II型能带结构，扩散层和p型包层的电阻变高。 该半导体发光装置能够以简单的结构减少无效电流，并且有效地将光量外部引出，从而提高发光强度。

公开(公告)号：US06399965B2

公开(公告)日：2002-06-04

申请号：US09757689

申请日：2001-01-11

申请人： Junichi Nakamura ,  Kazuaki Sasaki ,  Shouichi Ohyama

发明人： Junichi Nakamura ,  Kazuaki Sasaki ,  Shouichi Ohyama

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L33/02

摘要： There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer 12, an AlGaInP active layer 13, a p-type AlGaInP upper clad layer 14, a p-type AlGaInP intermediate layer 15 whose lattice matching rate &Dgr;a/a with GaAs is −3.3%, a p-type AlGaInP current diffusion layer 16 and a p-type electrode 17 are laminated on an n-type GaAs substrate 11 and an n-type electrode 18 is provided on the n-type GaAs substrate 11. Thus, the number of crystal defects in the crystal surface can be reduced to 20 or less per one LED by setting the value of the lattice matching rate &Dgr;a/a of the intermediate layer 15 to be −3.3%, which is lower than −2.5%. As a result, adhesion of the p-type electrode 17 formed on the current diffusion layer 16 is improved and thereby the yield of LED can be enhanced.

摘要翻译： 通过减少晶体表面的缺陷，提供了具有改善的电极附着力的半导体发光器件。 n型AlGaInP下包层12，AlGaInP有源层13，p型AlGaInP上覆层14，与GaAs的晶格匹配率DELTAa / a为-3.3％的p型AlGaInP中间层15，p 型AlGaInP电流扩散层16和p型电极17层叠在n型GaAs衬底11上，并且n型电极18设置在n型GaAs衬底11上。因此，晶体缺陷的数量 通过将中间层15的晶格匹配率DELTAa / a的值设定为-3.3％，低于-2.5％，每个LED的晶体面可以减少到20以下。 结果，形成在电流扩散层16上的p型电极17的粘附性提高，从而可以提高LED的产量。

公开(公告)号：US5516723A

公开(公告)日：1996-05-14

申请号：US435391

申请日：1995-05-05

申请人： Kazuaki Sasaki ,  Osamu Yamamoto

发明人： Kazuaki Sasaki ,  Osamu Yamamoto

IPC分类号： H01L33/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/40 ,  H01L21/20

CPC分类号： H01S5/2232 ,  H01L33/145 ,  H01S2304/12 ,  H01S5/18352 ,  H01S5/2206 ,  H01S5/3202 ,  H01S5/32308 ,  H01S5/4031

摘要： A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.

摘要翻译： 半导体激光器件包括具有p型和n型导电类型之一的衬底以及形成在衬底的表面上并具有另一种导电性的电流限制层。 电流收缩层具有延伸到衬底表面的通道，用于在垂直于衬底表面的方向上限定电流路径。 通道是沿垂直于基板的端面的方向延伸的带状图案。 具有一种导电性的第三覆层被填充在通道中，第三包覆层的表面与电流限制层的表面齐平。 形成在第三包层和电流收缩层上的构成双异质结构的第一包层，有源层和第二覆层。

公开(公告)号：US5208468A

公开(公告)日：1993-05-04

申请号：US727375

申请日：1991-07-05

申请人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

发明人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

IPC分类号： H01S5/02 ,  H01S5/028

CPC分类号： H01S5/0281 ,  H01S5/028 ,  H01S5/0201 ,  H01S5/0282 ,  H01S5/0283

摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.

摘要翻译： 公开了从小面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和 保护膜。

公开(公告)号：US08933326B2

公开(公告)日：2015-01-13

申请号：US13518563

申请日：2010-12-27

申请人： Kazuaki Sasaki ,  Takaaki Agui

发明人： Kazuaki Sasaki ,  Takaaki Agui

IPC分类号： H01L31/0304 ,  H01L31/0687 ,  H01L31/18

CPC分类号： H01L31/03046 ,  H01L31/06875 ,  H01L31/1844 ,  Y02E10/544

摘要： Disclosed is a multijunction compound semiconductor solar cell having a buffer layer between a first cell and a second cell. In the buffer layer, a plurality of semiconductor layers is arranged such that lattice constants thereof have larger values in order from the first cell side to the second cell side. Of the plurality of semiconductor layers, two layers having the largest difference in lattice constant among each two adjacent layers are disposed closer to the first cell than the center in the thickness direction of the buffer layer.

摘要翻译： 公开了一种在第一单元和第二单元之间具有缓冲层的多结型化合物半导体太阳能电池。 在缓冲层中，配置多个半导体层，使得其晶格常数从第一单元侧到第二单元侧的顺序依次较大。 在多个半导体层中，在两个相邻层之间具有最大的晶格常数差的两个层比缓冲层的厚度方向上的中心更靠近第一单元。

公开(公告)号：US08460191B2

公开(公告)日：2013-06-11

申请号：US11914962

申请日：2006-05-18

申请人： Hideki Yoshikawa ,  Takashi Azuma ,  Kenichi Kawabata ,  Kazuaki Sasaki ,  Shinichiro Umemura

发明人： Hideki Yoshikawa ,  Takashi Azuma ,  Kenichi Kawabata ,  Kazuaki Sasaki ,  Shinichiro Umemura

IPC分类号： A61B8/00

CPC分类号： A61B8/5207 ,  A61B5/11 ,  A61B8/08 ,  A61B8/461 ,  A61B8/463 ,  G06T5/50 ,  G06T7/223 ,  G06T2207/10132 ,  G06T2207/30101

摘要： An diagnostic imaging apparatus for imaging information changing with time and displaying it in real time, composed of an ultrasonic probe (2), having piezoelectric elements arranged in an array form that transmit ultrasonic waves to a target object (1) and acquires a reflection signal from the target object; a body movement measuring unit (12) that constitutes a two-dimensional ultrasonic image using the reflection signal acquired by the ultrasonic probe, sets, in the image plane, a plurality of measuring areas used for measuring the body movement of the target object, and measures the body movement and deformation amounts in the measuring areas; and an image accumulating (subtracting) unit for accumulating or subtracting images using body movement measured by the body movement measurement unit.

摘要翻译： 一种诊断成像装置，用于对随时间变化的图像信息随时间变化并实时显示，该超声波探头由超声波探头（2）组成，该超声波探头具有排列成阵列形式的压电元件，以将超声波传送到目标物体（1）并获取反射信号 从目标对象; 使用由超声波探头取得的反射信号构成二维超声波图像的身体运动测量单元（12）在图像平面中设置用于测量目标物体的身体运动的多个测量区域，以及 测量测量区域的身体运动和变形量; 以及用于通过由身体运动测量单元测量的身体运动来累积或减去图像的图像累积（减去）单元。

公开(公告)号：US08350091B2

公开(公告)日：2013-01-08

申请号：US13341069

申请日：2011-12-30

申请人： Koji Hagiya ,  Kazuaki Sasaki

发明人： Koji Hagiya ,  Kazuaki Sasaki

IPC分类号： C07C45/90

CPC分类号： C07B39/00 ,  C01D3/02 ,  C07C17/208 ,  C07C67/14 ,  C07C201/12 ,  C07C22/08 ,  C07C69/76 ,  C07C205/12

摘要： A potassium fluoride dispersion essentially consisting of potassium fluoride and an aprotic organic solvent having a boiling point higher than that of methanol, which is obtainable by mixing a mixture containing potassium fluoride and 5 to 50 parts by weight of methanol per 1 part by weight of potassium fluoride with the aprotic organic solvent followed by concentrating the obtained mixture, and a process for producing a fluorine-containing organic compound comprising contacting an organic compound having at least one group capable of being substituted nucleophilically with a fluorine atom with the potassium fluoride dispersion.

摘要翻译： 基本上由氟化钾和沸点高于甲醇的非质子有机溶剂组成的氟化钾分散液，其通过将含有氟化钾的混合物和5至50重量份的甲醇混合，每1重量份的钾 用非质子有机溶剂氟化，然后浓缩所得混合物，以及含氟有机化合物的制备方法，包括使具有至少一个能够被氟原子取代的基团的有机化合物与氟原子分散体接触。