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1.发明授权
公开(公告)号：US5516723A
公开(公告)日：1996-05-14
申请号：US435391
申请日：1995-05-05
申请人： Kazuaki Sasaki , Osamu Yamamoto
发明人： Kazuaki Sasaki , Osamu Yamamoto
CPC分类号： H01S5/2232 , H01L33/145 , H01S2304/12 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031
摘要： A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.
摘要翻译： 半导体激光器件包括具有p型和n型导电类型之一的衬底以及形成在衬底的表面上并具有另一种导电性的电流限制层。 电流收缩层具有延伸到衬底表面的通道，用于在垂直于衬底表面的方向上限定电流路径。 通道是沿垂直于基板的端面的方向延伸的带状图案。 具有一种导电性的第三覆层被填充在通道中，第三包覆层的表面与电流限制层的表面齐平。 形成在第三包层和电流收缩层上的构成双异质结构的第一包层，有源层和第二覆层。
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公开(公告)号：US5717709A
公开(公告)日：1998-02-10
申请号：US668086
申请日：1996-06-19
申请人： Kazuaki Sasaki , Osamu Yamamoto
发明人： Kazuaki Sasaki , Osamu Yamamoto
CPC分类号： H01S5/2232 , H01L33/145 , H01S2304/12 , H01S5/18352 , H01S5/2206 , H01S5/3202 , H01S5/32308 , H01S5/4031
摘要： A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.
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公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.
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公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译： 公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。
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公开(公告)号：US5413956A
公开(公告)日：1995-05-09
申请号：US995064
申请日：1992-12-22
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在内部结构的顶表面或衬底的反面中的任一个上以及在内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 以及在通过蚀刻除去窗口层的表面上和在另一个表面上形成电极。 制造半导体激光器件的另一种方法包括以下步骤：在棒的发光端面形成窗口层; 将棒插入具有用于形成电极的开口的装置和用于防止棒和开口之间的位置偏移的支撑部分，以及在棒的顶表面和反面上形成电极; 并将条切成芯片。
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公开(公告)号：US5309001A
公开(公告)日：1994-05-03
申请号：US980666
申请日：1992-11-24
申请人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
发明人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
CPC分类号： H01L33/385 , H01L33/38 , H01L33/20 , H01L33/24
摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散， 从二阶分支线性延伸。 表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。 而且，半导体层沿着台面形状的表面电极的图案设置。 因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。
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公开(公告)号：US20070161897A1
公开(公告)日：2007-07-12
申请号：US10557237
申请日：2004-05-18
申请人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
发明人： Kazuaki Sasaki , Takashi Azuma , Ken-ichi Kawabata , Shin-ichiro Umemura , Takashi Okai , Tetsuya Ishikawa
IPC分类号： A61B8/00
CPC分类号： A61N7/02 , A61B8/06 , A61B8/13 , A61B2090/378
摘要： Ultrasonic treatment equipment is provided which repeats therapeutic ultrasound exposure while measuring a degree of vessel constriction on a therapeutic ultrasound exposure basis. This equipment includes: a therapeutic ultrasonic transducer 2 which exposes a blood vessel of an affected part to a focused therapeutic ultrasonic wave for a specified period of exposure time; an imaging ultrasonic probe 3 which images an ultrasound tomographic image of the affected part; a display unit 24 which displays the ultrasound tomographic image; means 21 for detecting a blood flow signal from a signal received by the imaging ultrasonic probe and determining the blood flow velocity of the blood vessels of the affected part; means 21 for calculating a rate of change in blood flow velocity during the exposure to the therapeutic ultrasonic wave or before and after the exposure to the therapeutic ultrasonic wave; and means 23 for controlling exposure conditions of the therapeutic ultrasonic wave on the basis of the rate of change in blood flow velocity, and thereby controlling the therapeutic ultrasonic transducer.
摘要翻译： 提供超声波处理设备，其在治疗超声暴露基础上测量血管收缩程度时重复治疗性超声波暴露。 该设备包括：治疗超声波换能器2，其将受影响部分的血管暴露于聚焦的治疗超声波达指定的曝光时间; 成像超声波探头3，其对受影响部分的超声断层图像进行成像; 显示单元24，其显示超声断层图像; 用于从由成像超声波探头接收的信号中检测血流信号并确定受影响部分的血管的血流速度的装置21; 用于计算暴露于治疗超声波期间或暴露于治疗超声波之前和之后的血流速度变化率的装置21; 以及基于血流速度变化率来控制治疗超声波的暴露条件的装置23，由此控制治疗用超声波换能器。
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公开(公告)号：US20050093428A1
公开(公告)日：2005-05-05
申请号：US10969015
申请日：2004-10-21
CPC分类号： H01L33/145 , H01L2224/48463 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.
摘要翻译： 半导体发光器件包括：半导体衬底; 形成在所述半导体基板上的发光层; 形成在用于限制发光的发光层的一部分上的电流阻挡层; 形成在电流阻挡层和发光层的另一部分上的电流扩散层; 形成在电流扩展层上的前电极; 以及形成在半导体基板的后侧的后电极。 电流阻挡层由中心区域和外部区域构成，该区域通过电流扩展层的一部分围绕中心区域，使得出现在器件的前表面上的发光区域具有环形形状 。 电流阻挡层的前电极和中心区域彼此相对。
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公开(公告)号：US06849473B2
公开(公告)日：2005-02-01
申请号：US10253609
申请日：2002-09-25
CPC分类号： H01L33/145 , H01L33/14 , H01L33/30
摘要： In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.
摘要翻译： 在半导体发光器件中，在n-GaAs衬底上堆叠n-GaAs缓冲层，n包层，未掺杂有源层，p包层，p中间带隙层和p 电流扩散层。 此外，在n-GaAs衬底下形成第一电极，在生长层侧形成第二电极。 在该工序中，除去刚好在第二电极正下方的p中间带隙层的区域，p电流扩散层层叠在p包覆层的去除区域中，p电流的结面 由于II型能带结构，扩散层和p型包层的电阻变高。 该半导体发光装置能够以简单的结构减少无效电流，并且有效地将光量外部引出，从而提高发光强度。
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10.发明授权公开(公告)号：US06399965B2
公开(公告)日：2002-06-04
申请号：US09757689
申请日：2001-01-11
IPC分类号： H01L3300
摘要： There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer 12, an AlGaInP active layer 13, a p-type AlGaInP upper clad layer 14, a p-type AlGaInP intermediate layer 15 whose lattice matching rate &Dgr;a/a with GaAs is −3.3%, a p-type AlGaInP current diffusion layer 16 and a p-type electrode 17 are laminated on an n-type GaAs substrate 11 and an n-type electrode 18 is provided on the n-type GaAs substrate 11. Thus, the number of crystal defects in the crystal surface can be reduced to 20 or less per one LED by setting the value of the lattice matching rate &Dgr;a/a of the intermediate layer 15 to be −3.3%, which is lower than −2.5%. As a result, adhesion of the p-type electrode 17 formed on the current diffusion layer 16 is improved and thereby the yield of LED can be enhanced.
摘要翻译： 通过减少晶体表面的缺陷，提供了具有改善的电极附着力的半导体发光器件。 n型AlGaInP下包层12，AlGaInP有源层13，p型AlGaInP上覆层14，与GaAs的晶格匹配率DELTAa / a为-3.3％的p型AlGaInP中间层15，p 型AlGaInP电流扩散层16和p型电极17层叠在n型GaAs衬底11上，并且n型电极18设置在n型GaAs衬底11上。因此，晶体缺陷的数量 通过将中间层15的晶格匹配率DELTAa / a的值设定为-3.3％，低于-2.5％，每个LED的晶体面可以减少到20以下。 结果，形成在电流扩散层16上的p型电极17的粘附性提高，从而可以提高LED的产量。
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