发明授权
- 专利标题： Process of fabricating field-emission type electron source, electron source fabricated thereby and element structure of electron source
- 专利标题（中）： 制造场发射型电子源的方法，由此制造的电子源和电子源的元素结构
-
申请号： US599315申请日： 1996-02-09
-
公开(公告)号： US5800233A公开(公告)日： 1998-09-01
- 发明人: Seiki Yano , Masao Urayama , Yoshiyuki Takegawa , Yuko Morita
- 申请人： Seiki Yano , Masao Urayama , Yoshiyuki Takegawa , Yuko Morita
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX7-077800 19950403
- 主分类号： H01J1/30
- IPC分类号： H01J1/30 ; H01J1/304 ; H01J9/02 ; H01J9/40
摘要：
A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.
信息查询
