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公开(公告)号:US20250006696A1
公开(公告)日:2025-01-02
申请号:US18525724
申请日:2023-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongkoon LEE , Youngchan KO , Byung Ho KIM
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/522 , H01L25/00
Abstract: A semiconductor package may include a first redistribution layer, bridge dies on an upper surface of the first redistribution layer, a second redistribution layer on the bridge dies and electrically connected to the bridge dies, conductive posts between the first and second redistribution layer, and semiconductor chips on an upper surface of the second redistribution layer. Each bridge die may include connection pads on an upper surface of the bridge dies. A pitch between first connection pads of a first bridge die among the bridge dies may be smaller than a pitch between second connection pads of a second bridge die among the bridge dies. A distance between an upper surface of the first bridge die and a lower surface of the second redistribution layer may be smaller than a distance between an upper surface of the second bridge die and a lower surface of the second redistribution layer.
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公开(公告)号:US20230154836A1
公开(公告)日:2023-05-18
申请号:US18098158
申请日:2023-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myungsam KANG , Youngchan KO , Jeongseok KIM , Kyung Don MUN , Bongju CHO
IPC: H01L23/498 , H01L23/538 , H01L23/31 , H01L23/00
CPC classification number: H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49833 , H01L23/5385 , H01L23/3171 , H01L24/16 , H01L23/5386 , H01L2224/16235
Abstract: A semiconductor package includes a redistribution substrate having a dielectric layer and a wiring pattern in the dielectric layer, the wiring pattern including a line part that extends horizontally, and a via part connected to the line part, the via part having a width less than a width of the line part, a passivation layer on a top surface of the redistribution substrate, the passivation layer including a material different from a material of the dielectric layer, a conductive pillar that penetrates the passivation layer, the conductive pillar being connected to the via part, and a connection terminal on a top surface of the conductive pillar, a distance between the top surface of the conductive pillar and a top surface of the passivation layer being greater than a thickness of the passivation layer.
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公开(公告)号:US20240222280A1
公开(公告)日:2024-07-04
申请号:US18363995
申请日:2023-08-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: MyungDo CHO , Youngchan KO , Gyeongho KIM , Byung Ho KIM , Yongkoon LEE , Jeongho LEE
IPC: H01L23/538 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
CPC classification number: H01L23/5381 , H01L21/486 , H01L21/565 , H01L23/3128 , H01L23/49833 , H01L23/49866 , H01L23/5385 , H01L23/5386 , H01L24/16 , H01L25/0655 , H01L2224/16227 , H01L2224/16238 , H01L2924/182
Abstract: A semiconductor package may include: a first redistribution layer structure; a bridge structure on the first redistribution layer structure; a plurality of conductive pillars on the first redistribution layer structure and side by side with the bridge structure; an encapsulant molding the bridge structure and the plurality of conductive pillars on the first redistribution layer structure; a second redistribution layer structure on the encapsulant, wherein a region of the second redistribution layer structure on the bridge structure is defined as a first region and a region other than the first region is defined as a second region; and a plurality of bonding pads at the first region. A vertical thickness of the first region may be smaller than a vertical thickness of the second region.
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公开(公告)号:US20230131240A1
公开(公告)日:2023-04-27
申请号:US17723689
申请日:2022-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngchan KO , Myungsam Kang , Jeongseok Kim , Bongju Cho
IPC: H01L23/538 , H01L25/10 , H01L23/498
Abstract: A semiconductor package includes a lower redistribution structure including a wiring layer, and a via connected to the wiring layer; a semiconductor chip on the lower redistribution structure; wiring patterns disposed on the lower redistribution structure and extending in a horizontal direction, the wiring patterns including a first wiring pattern; metal patterns on the wiring patterns, the metal patterns including a first connection pillar and a first dummy pillar disposed on the first wiring pattern; an encapsulant on the lower redistribution structure, the semiconductor chip, the wiring patterns, and the metal patterns; and an upper redistribution structure on the encapsulant. The first connection pillar is directly connected to the upper redistribution structure.
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公开(公告)号:US20220068784A1
公开(公告)日:2022-03-03
申请号:US17218356
申请日:2021-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myungsam KANG , Youngchan KO , Jeongseok KIM , Bongju CHO
IPC: H01L23/498 , H01L23/552 , H01L25/10
Abstract: A fan-out type semiconductor package includes: a frame including a cavity and a middle redistribution layer (RDL) structure at least partially surrounding the cavity; a semiconductor chip in the cavity; a lower RDL structure on the frame and electrically connected with the semiconductor chip and the middle RDL structure; an upper RDL structure on the frame and electrically connected with the middle RDL structure; an upper shielding pattern in the upper RDL structure to shield the semiconductor chip from electromagnetic interference (EMI); a lower shielding pattern in the lower RDL structure to shield the semiconductor chip from the EMI; and a side shielding pattern in the middle RDL structure to shield the semiconductor chip from the EMI. The upper shielding pattern and the lower shielding pattern have a thickness of no less than about 5 μm, and the side shielding pattern has a width of no less than about 5 μm.
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公开(公告)号:US20240421034A1
公开(公告)日:2024-12-19
申请号:US18403936
申请日:2024-01-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byungho KIM , Youngchan KO , Gyeongho KIM , Yongkoon LEE , Myungdo CHO
IPC: H01L23/42 , H01L23/15 , H01L23/498 , H01L23/538 , H01L25/065
Abstract: A semiconductor package includes: a first redistribution structure including a first insulating layer and first conductive patterns; a connection substrate on the first redistribution structure, and including a base layer and a through electrode penetrating the base layer, wherein the base layer includes a first material; a molding layer at least partially surrounding the connection substrate and disposed on the first redistribution structure, wherein the molding layer includes a second material; a second redistribution structure disposed on the molding layer and the connection substrate; and a plurality of semiconductor devices spaced apart from each other on the second redistribution structure, wherein a first thermal expansion coefficient of the first material of the base layer is less than a second thermal expansion coefficient of the second material of the molding layer, and wherein an upper surface of the base layer is substantially coplanar with an upper surface of the molding layer.
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公开(公告)号:US20230187399A1
公开(公告)日:2023-06-15
申请号:US18166869
申请日:2023-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myungsam KANG , Youngchan KO , Jeongseok KIM , Kyungdon MUN
IPC: H01L23/00 , H01L23/498 , H01L23/522
CPC classification number: H01L24/14 , H01L24/05 , H01L23/49811 , H01L23/5226
Abstract: A semiconductor package includes a redistribution structure including an insulating layer and a redistribution layer on the insulating layer, and having a first surface and a second surface opposing the first surface, and an under-bump metal (UBM) structure including an UBM pad protruding from the first surface of the redistribution structure, and an UBM via penetrating through the insulating layer and connecting the redistribution layer and the UBM pad. A lower surface of the UBM via has a first area in contact with the UBM pad, and a second area having a step configuration relative to the first area and that extends outwardly of the first area.
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公开(公告)号:US20210265251A1
公开(公告)日:2021-08-26
申请号:US17031141
申请日:2020-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyungdon MUN , Myungsam KANG , Youngchan KO , Yieok KWON , Jeongseok KIM , Gongje LEE , Bongju CHO
IPC: H01L23/498 , H01L23/00 , H01L23/31
Abstract: A semiconductor package includes a core member having a first surface and a second surface opposing each other, and an external side surface between the first and second surfaces, the core member having a through-hole connecting the first and second surfaces, having a protruding portion that protrudes from the external side surface, and having a surface roughness (Ra) of 0.5 μm or more, a redistribution substrate on the first surface of the core member, and including a redistribution layer; a semiconductor chip in the through-hole on the redistribution substrate, and having a contact pad electrically connected to the redistribution layer, and an encapsulant on the redistribution substrate, and covering the semiconductor chip and the core member, the protruding portion of the core member having a surface exposed to a side surface of the encapsulant.
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公开(公告)号:US20210210414A1
公开(公告)日:2021-07-08
申请号:US17012294
申请日:2020-09-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myungsam KANG , Youngchan KO , Kyungdon MUN
IPC: H01L23/485 , H01L23/00 , H01L23/538 , H01L21/48
Abstract: A semiconductor package includes a redistribution substrate having a first redistribution layer, a semiconductor chip on the redistribution substrate and connected to the first redistribution layer, a vertical connection conductor on the redistribution substrate and electrically connected to the semiconductor chip through the first redistribution layer, a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor, and an encapsulant covering at least a portion of each of the semiconductor chip, the vertical connection conductor, and the core member, the encapsulant filling the first and second through-holes, wherein the vertical connection conductor has a cross-sectional shape with a side surface tapered to have a width of a lower surface thereof is narrower than a width of an upper surface thereof, and the first and second through-holes have a cross-sectional shape tapered in a direction opposite to the vertical connection conductor.
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公开(公告)号:US20240055338A1
公开(公告)日:2024-02-15
申请号:US18218885
申请日:2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byungho KIM , Youngchan KO , Gyeongho KIM , Yongkoon LEE , Myungdo CHO , Sangseok HONG
IPC: H01L23/498 , H01L23/31 , H01L23/00
CPC classification number: H01L23/49822 , H01L23/3128 , H01L23/49827 , H01L24/16 , H01L24/48 , H01L24/32 , H01L24/08 , H01L2924/15174 , H01L2924/13091 , H01L2924/01029 , H01L2924/01022 , H01L2224/16165 , H01L2224/16055 , H01L2224/48108 , H01L2224/48145 , H01L2224/32054 , H01L2224/32146 , H01L2224/32235 , H01L2224/08135
Abstract: A fan-out semiconductor package includes a wiring substrate including a first fan-in region, a fan-out region surrounding the first fan-in region, and a second fan-in region, a first fan-in chip structure, a second fan-in chip structure, a first redistribution structure including first redistribution elements disposed on a bottom surface of the wiring substrate, and a second redistribution structure disposed on a top surface of the wiring substrate, and a chip wiring structure formed on a top surface of the second chip, and the second redistribution structure includes a second redistribution layer extending to the first fan-in region and the fan-out region, a plurality of second redistribution vias integrally formed with the second redistribution layer and extending downward, and a seed layer surrounding the second redistribution layer and bottom surfaces of the plurality of second redistribution vias.
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