公开(公告)号：US20240055338A1

公开(公告)日：2024-02-15

申请号：US18218885

申请日：2023-07-06

申请人： Samsung Electronics Co., Ltd.

发明人： Byungho KIM ,  Youngchan KO ,  Gyeongho KIM ,  Yongkoon LEE ,  Myungdo CHO ,  Sangseok HONG

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49822 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/48 ,  H01L24/32 ,  H01L24/08 ,  H01L2924/15174 ,  H01L2924/13091 ,  H01L2924/01029 ,  H01L2924/01022 ,  H01L2224/16165 ,  H01L2224/16055 ,  H01L2224/48108 ,  H01L2224/48145 ,  H01L2224/32054 ,  H01L2224/32146 ,  H01L2224/32235 ,  H01L2224/08135

摘要： A fan-out semiconductor package includes a wiring substrate including a first fan-in region, a fan-out region surrounding the first fan-in region, and a second fan-in region, a first fan-in chip structure, a second fan-in chip structure, a first redistribution structure including first redistribution elements disposed on a bottom surface of the wiring substrate, and a second redistribution structure disposed on a top surface of the wiring substrate, and a chip wiring structure formed on a top surface of the second chip, and the second redistribution structure includes a second redistribution layer extending to the first fan-in region and the fan-out region, a plurality of second redistribution vias integrally formed with the second redistribution layer and extending downward, and a seed layer surrounding the second redistribution layer and bottom surfaces of the plurality of second redistribution vias.