公开(公告)号：US20180151736A1

公开(公告)日：2018-05-31

申请号：US15877563

申请日：2018-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Tae-Yong KWON ,  Sang-Su KIM ,  Jae-Hoo PARK

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L29/165 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/161 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

公开(公告)号：US20150200289A1

公开(公告)日：2015-07-16

申请号：US14570331

申请日：2014-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xin-Gui ZHANG ,  Tae-Yong KWON ,  Jung-Gil YANG ,  Sang-Su KIM

IPC: H01L29/78 ,  H01L29/205 ,  H01L29/165

CPC classification number: H01L29/7391 ,  H01L29/0843 ,  H01L29/165 ,  H01L29/205

Abstract: The inventive concepts provide tunneling field effect transistors. The tunneling field effect transistor includes a source region, a drain region, a channel region, and a pocket region. The channel region includes a first material, and is disposed between the source region and the drain region. The pocket region includes a second material, and is disposed between the source region and the drain region. The channel region includes a first region adjacent to the source region, and a second region adjacent to the drain region. A first energy band gap of the first region is smaller than a second energy band gap of the second region, and a third energy band gap of the pocket region is different from the first energy band gap and the second energy band gap.

Abstract translation: 本发明构思提供了隧穿场效应晶体管。 隧道场效应晶体管包括源极区，漏极区，沟道区和穴区。 沟道区域包括第一材料，并且设置在源极区域和漏极区域之间。 袋区域包括第二材料，并且设置在源极区域和漏极区域之间。 沟道区域包括与源极区域相邻的第一区域和与漏极区域相邻的第二区域。 第一区域的第一能带隙小于第二区域的第二能带隙，并且袋区域的第三能带隙与第一能带隙和第二能带隙不同。

公开(公告)号：US20140066631A1

公开(公告)日：2014-03-06

申请号：US13973985

申请日：2013-08-22

Applicant: Gachon University of Industry-Academic Cooperation Foundation ,  Samsung Electronics Co., Ltd.

Inventor： Tae-Yong KWON ,  Woo-Jae KIM ,  Hyung-Sam KIM

IPC: C07D249/04

CPC classification number: C07D249/04 ,  C01B32/172

Abstract: Provided is a method of separating carbon nanotubes, the method comprising: forming first carbon nanotubes having a first functional group, forming a substrate having a second functional group, and causing the first carbon nanotubes to adhere to the substrate by a click chemistry reaction between the first functional group and the second functional group.

Abstract translation: 提供一种分离碳纳米管的方法，该方法包括：形成具有第一官能团的第一碳纳米管，形成具有第二官能团的基材，并且使第一碳纳米管通过第二官能团之间的点击化学反应 第一官能团和第二官能团。