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公开(公告)号：US11322583B2
公开(公告)日：2022-05-03
申请号：US16821565
申请日：2020-03-17
发明人： Sungkeun Lim , Unki Kim , Yuyeong Jo , Yihwan Kim , Jinbum Kim , Pankwi Park , Ilgyou Shin , Seunghun Lee
摘要： A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
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2.发明申请公开(公告)号：US20200373385A1
公开(公告)日：2020-11-26
申请号：US16821565
申请日：2020-03-17
发明人： Sungkeun Lim , Unki Kim , Yuyeong Jo , Yihwan Kim , Jinbum Kim , Pankwi Park , Ilgyou Shin , Seunghun Lee
摘要： A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
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3.发明公开公开(公告)号：US20240297215A1
公开(公告)日：2024-09-05
申请号：US18658794
申请日：2024-05-08
发明人： Sungkeun Lim , Unki Kim , Yuyeong Jo , Yihwan Kim , Jinbum Kim , Pankwi Park , Ilgyou Shin , Seunghun Lee
CPC分类号： H01L29/0638 , H01L21/0245 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
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公开(公告)号：US20240258230A1
公开(公告)日：2024-08-01
申请号：US18515463
申请日：2023-11-21
发明人： Sungkeun Lim , Dohyun Go , Unki Kim , Hyohoon Byeon , Yuyeong Jo , Jinyeong Joe
IPC分类号： H01L23/522 , H01L21/768 , H01L23/29 , H01L23/31
CPC分类号： H01L23/5226 , H01L21/76898 , H01L23/291 , H01L23/3171
摘要： A semiconductor device includes a substrate; an active region extending on the substrate in a first direction; a protective layer on a lower surface of the substrate; an etch stop layer on a lower surface of the protective layer; a device isolation layer defining the active region; a gate structure on the active region and extending in a second direction, intersecting the first direction; a source/drain region on the active region on both lateral sides of the gate structure; a contact structure connected to the source/drain region; and a power transmission structure electrically connected to the contact structure.
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公开(公告)号：US20230402458A1
公开(公告)日：2023-12-14
申请号：US18196191
申请日：2023-05-11
发明人： Jinyeong Joe , Hyohoon Byeon , Namhyun Lee , Sungkeun Lim , Yuyeong Jo
IPC分类号： H01L27/092 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/417 , H01L29/775 , H01L21/822 , H01L21/8238 , H01L29/66
CPC分类号： H01L27/0922 , H01L29/0673 , H01L29/1037 , H01L29/42392 , H01L29/41733 , H01L29/775 , H01L21/8221 , H01L21/823807 , H01L21/823814 , H01L29/66439 , H01L29/66545
摘要： A semiconductor device includes a first transistor structure on a substrate, the first transistor structure including first channel layers spaced apart from each other, a first gate electrode surrounding the first channel layers, a first source/drain region connected to the first channel layers on a first side of the first gate electrode, and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure including second channel layers spaced apart from each other, a second gate electrode surrounding the second channel layers, and a third source/drain region connected to the second channel layers on a first side of the second gate electrode.
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公开(公告)号：US20230387234A1
公开(公告)日：2023-11-30
申请号：US18189538
申请日：2023-03-24
发明人： Hyohoon Byeon , Sungkeun Lim , Dohyun Go , Unki Kim , Yuyeong Jo , Jinyeong Joe
IPC分类号： H01L29/423 , H01L29/66 , H01L29/786 , H01L29/775 , H01L29/06
CPC分类号： H01L29/42392 , H01L29/66545 , H01L29/78696 , H01L29/775 , H01L29/0673 , H01L29/66553
摘要： A semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, a plurality of channel layers spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, on the active region and surrounded by the gate structure, and source/drain regions in recess regions of the active region, on opposite sides adjacent to the gate structure and electrically connected to the plurality of channel layers. Each of the plurality of channel layers includes first to third semiconductor layers sequentially stacked in the third direction, the first and third semiconductor layers include silicon (Si), and the second semiconductor layer includes silicon-germanium (SiGe). Side surfaces of the first to third semiconductor layers in the second direction are in contact with the gate structure.
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公开(公告)号：US11728347B2
公开(公告)日：2023-08-15
申请号：US17494275
申请日：2021-10-05
发明人： Weonhong Kim , Pilkyu Kang , Yuichiro Sasaki , Sungkeun Lim , Yongho Ha , Sangjin Hyun , Kughwan Kim , Seungha Oh
IPC分类号： H01L27/12 , H01L21/762 , H01L27/02 , H01L29/78
CPC分类号： H01L27/1203 , H01L21/76224 , H01L27/0203 , H01L27/02 , H01L29/78
摘要： An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.
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公开(公告)号：US11996443B2
公开(公告)日：2024-05-28
申请号：US17729676
申请日：2022-04-26
发明人： Sungkeun Lim , Unki Kim , Yuyeong Jo , Yihwan Kim , Jinbum Kim , Pankwi Park , Ilgyou Shin , Seunghun Lee
CPC分类号： H01L29/0638 , H01L21/0245 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.
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公开(公告)号：US11901356B2
公开(公告)日：2024-02-13
申请号：US16817069
申请日：2020-03-12
发明人： Seungha Oh , Pil-Kyu Kang , Kughwan Kim , Weonhong Kim , Yuichiro Sasaki , Sang Woo Lee , Sungkeun Lim , Yongho Ha , Sangjin Hyun
CPC分类号： H01L27/0688 , H01L23/481 , H10B41/60 , H10B43/20 , H10B63/30 , H10B63/84
摘要： A three-dimensional semiconductor device includes a lower substrate, a plurality of lower transistors disposed on the lower substrate, an upper substrate disposed on the lower transistors, a plurality of lower conductive lines disposed between the lower transistors and the upper substrate, and a plurality of upper transistors disposed on the upper substrate. At least one of the lower transistors is connected to a corresponding one of the lower conductive lines. Each of the upper transistors includes an upper gate electrode disposed on the upper substrate, a first upper source/drain pattern disposed in the upper substrate at a first side of the upper gate electrode, and a second upper source/drain pattern disposed in the upper substrate at a second, opposing side of the upper gate electrode. The upper gate electrode includes silicon germanium (SiGe).
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公开(公告)号：US11610838B2
公开(公告)日：2023-03-21
申请号：US17367773
申请日：2021-07-06
发明人： Yuichiro Sasaki , Sungkeun Lim , Pil-Kyu Kang , Weonhong Kim , Seungha Oh , Yongho Ha , Sangjin Hyun
IPC分类号： H01L23/522 , H01L23/50 , H01L23/528
摘要： A semiconductor device includes a semiconductor layer having a first surface and a second surface opposite to the first surface, an active pattern on the first surface, the active pattern including a source/drain region, a power rail electrically connected to the source/drain region, and a power delivery network on the second surface, the power delivery network electrically connected to the power rail. The semiconductor layer includes an etch stop dopant, and the etch stop dopant has a maximum concentration at the second surface.
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