公开(公告)号：US20240258230A1

公开(公告)日：2024-08-01

申请号：US18515463

申请日：2023-11-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sungkeun Lim ,  Dohyun Go ,  Unki Kim ,  Hyohoon Byeon ,  Yuyeong Jo ,  Jinyeong Joe

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3171

摘要： A semiconductor device includes a substrate; an active region extending on the substrate in a first direction; a protective layer on a lower surface of the substrate; an etch stop layer on a lower surface of the protective layer; a device isolation layer defining the active region; a gate structure on the active region and extending in a second direction, intersecting the first direction; a source/drain region on the active region on both lateral sides of the gate structure; a contact structure connected to the source/drain region; and a power transmission structure electrically connected to the contact structure.

公开(公告)号：US20230402458A1

公开(公告)日：2023-12-14

申请号：US18196191

申请日：2023-05-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinyeong Joe ,  Hyohoon Byeon ,  Namhyun Lee ,  Sungkeun Lim ,  Yuyeong Jo

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L27/0922 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L21/8221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66439 ,  H01L29/66545

摘要： A semiconductor device includes a first transistor structure on a substrate, the first transistor structure including first channel layers spaced apart from each other, a first gate electrode surrounding the first channel layers, a first source/drain region connected to the first channel layers on a first side of the first gate electrode, and a second source/drain region connected to the first channel layers on a second side of the first gate electrode that is opposite to the first side of the first gate electrode, and a second transistor structure on the first transistor structure, the second transistor structure including second channel layers spaced apart from each other, a second gate electrode surrounding the second channel layers, and a third source/drain region connected to the second channel layers on a first side of the second gate electrode.

公开(公告)号：US20230387234A1

公开(公告)日：2023-11-30

申请号：US18189538

申请日：2023-03-24

申请人： Samsung Electronics Co., Ltd.

发明人： Hyohoon Byeon ,  Sungkeun Lim ,  Dohyun Go ,  Unki Kim ,  Yuyeong Jo ,  Jinyeong Joe

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/775 ,  H01L29/06

CPC分类号： H01L29/42392 ,  H01L29/66545 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/0673 ,  H01L29/66553

摘要： A semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, a plurality of channel layers spaced apart from each other in a third direction, perpendicular to an upper surface of the substrate, on the active region and surrounded by the gate structure, and source/drain regions in recess regions of the active region, on opposite sides adjacent to the gate structure and electrically connected to the plurality of channel layers. Each of the plurality of channel layers includes first to third semiconductor layers sequentially stacked in the third direction, the first and third semiconductor layers include silicon (Si), and the second semiconductor layer includes silicon-germanium (SiGe). Side surfaces of the first to third semiconductor layers in the second direction are in contact with the gate structure.