知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.02 seconds)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230019790A1

    公开(公告)日：2023-01-19

    申请号：US17742619

    申请日：2022-05-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Minsung KANG ,  Hyoungyol MUN ,  Sungdong CHO ,  Wonhee CHO

    IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

    Abstract: A semiconductor device includes a semiconductor substrate including a first region and a second region, first metal lines spaced apart from each other at a first interval on the first region, second metal lines spaced apart from each other at a second interval on the second region, the second interval being less than the first interval, and a passivation layer on the semiconductor substrate and covering the first and second metal lines, the passivation layer including sidewall parts covering sidewalls of the first metal lines and the second metal lines, the sidewall parts including a porous dielectric layer, upper parts covering top surfaces of the first metal lines and the second metal lines, and an air gap defined by the sidewall parts between the second metal lines.

    DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS
    2.
    发明申请
    DEVICE INCLUDING FIRST STRUCTURE HAVING PERIPHERAL CIRCUIT AND SECOND STRUCTURE HAVING GATE LAYERS 有权

    公开(公告)号：US20210407968A1

    公开(公告)日：2021-12-30

    申请号：US17315716

    申请日：2021-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunji KIM ,  Seungwoo PAEK ,  Byungkyu KIM ,  Sangjun PARK ,  Sungdong CHO

    IPC: H01L25/065 ,  H01L23/00 ,  H01L29/423 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11573 ,  H01L23/498 ,  H01L23/538

    Abstract: A device including a first structure and a second structure is provided. The device includes a substrate, a peripheral circuit and first junction pads on the substrate; a first insulating structure surrounding side surfaces of the first junction pads; second junction pads contacting the first junction pads; a second insulating structure on the first insulating structure; a passivation layer on the second insulating structure; an upper insulating structure between the passivation layer and the second insulating structure; a barrier capping layer between the upper insulating structure and the passivation layer; conductive patterns spaced apart from each other in the upper insulating structure; a first pattern structure between the upper insulating structure and the second insulating structure; a stack structure between the second insulating structure and the first pattern structure, and including gate layers; and a vertical structure passing through the stack structure and including a data storage structure and a channel layer.

    SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS 有权

    公开(公告)号：US20220139836A1

    公开(公告)日：2022-05-05

    申请号：US17330795

    申请日：2021-05-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yonghyeok SON ,  Junwoo LEE ,  Sungdong CHO

    IPC: H01L23/535 ,  H01L27/108 ,  H01L21/768

    Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area, a plurality of capacitors including a plurality of lower electrodes arranged in the cell area, a plurality of capacitor dielectric layers covering the plurality of lower electrodes, and an upper electrode on the plurality of capacitor dielectric layers, an etch stop layer covering the upper electrode, a filling insulation layer covering the etch stop layer and arranged in the cell area and the peripheral area, a plurality of wiring lines on the filling insulation layer, and a first wiring contact plug electrically connecting at least one of the plurality of wiring lines to the upper electrode. The upper electrode includes a first upper electrode layer covering the plurality of capacitor dielectric layers and including a semiconductor material and a second upper electrode layer covering the first upper electrode layer and including a metallic material.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220139806A1

    公开(公告)日：2022-05-05

    申请号：US17371602

    申请日：2021-07-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwangwuk PARK ,  Youngmin LEE ,  Hyoungyol MUN ,  Inyoung LEE ,  Seokhwan JEONG ,  Sungdong CHO

    IPC: H01L23/48 ,  H01L25/065 ,  H01L23/528 ,  H01L21/768

    Abstract: A semiconductor device, includes: a substrate having a first surface on which a plurality of devices are disposed and a second surface, opposite to the first surface; an interlayer insulating film on the first surface of the substrate; an etching delay layer disposed in a region between the substrate and the interlayer insulating film; first and second landing pads on the interlayer insulating film; a first through electrode penetrating through the substrate and the interlayer insulating film; and a second through electrode penetrating the substrate, the etching delay layer, and the interlayer insulating film, the second through electrode having a width, greater than that of the first through electrode, wherein each of the first and second through electrodes includes first and second tapered end portions in the interlayer insulating film, each of first and second tapered end portions having a cross-sectional shape narrowing closer to the landing pads.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220020667A1

    公开(公告)日：2022-01-20

    申请号：US17213767

    申请日：2021-03-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwangwuk PARK ,  Youngmin LEE ,  Sungdong CHO ,  Eunji KIM ,  Hyoungyol MUN ,  Seokhwan JEONG

    IPC: H01L23/48 ,  H01L21/762

    Abstract: A semiconductor includes a substrate having a first surface and a second surface opposite to each other, the substrate having a via hole extending in a thickness direction from the first surface, a circuit pattern in the first surface of the substrate, a through electrode structure in the via hole, a device isolation structure in a first trench extending in one direction in the first surface of the substrate, the device isolation structure between the via hole and the circuit pattern, the device isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench, and an insulation interlayer on the first surface of the substrate and covering the circuit pattern.

    SEMICONDUCTOR PACKAGE
    10.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20230005853A1

    公开(公告)日：2023-01-05

    申请号：US17674974

    申请日：2022-02-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kunsang PARK ,  Kyuha LEE ,  Youngmin LEE ,  Seokho KIM ,  Inyoung LEE ,  Seokhwan JEONG ,  Sungdong CHO

    IPC: H01L23/00 ,  H01L25/065 ,  H01L21/66

    Abstract: A semiconductor package includes a first structure having a first insulating layer and a first bonding pad penetrating the first insulating layer, and a second structure on the first structure and having a second insulating layer bonded to the first insulating layer, a bonding pad structure penetrating the second insulating layer and bonded to the first bonding pad, and a test pad structure penetrating the second insulating layer and including a test pad in an opening penetrating the second insulating layer and having a protrusion with a flat surface, and a bonding layer filling the opening and covering the test pad and the flat surface, the protrusion of the test pad extending from a surface in contact with the bonding layer, and the flat surface of the protrusion being within the opening and spaced apart from an interface between the bonding layer and the first insulating layer.

Patent Agency Ranking