公开(公告)号：US20150145124A1

公开(公告)日：2015-05-28

申请号：US14327674

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： SinWoo KANG ,  Sungdong CHO

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/562 ,  H01L23/585 ,  H01L24/05 ,  H01L24/13 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13007 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2224/13099

Abstract: Provided is a semiconductor device with through-silicon vias. The device includes a substrate including a lower semiconductor layer, a buried insulating layer, and an upper semiconductor layer, electronic devices on the upper semiconductor layer, a vertical electrode structure including a vertical electrode penetrating the substrate, and an electrode separation pattern surrounding the vertical electrode structure in a plan view and penetrating the upper semiconductor layer to directly contact the buried insulating layer.

Abstract translation: 提供了具有通硅通孔的半导体器件。 该器件包括：具有下半导体层，埋入绝缘层和上半导体层的衬底，上半导体层上的电子器件，包括穿透衬底的垂直电极的垂直电极结构，以及包围垂直电极的电极分离图案 电极结构，并且穿透上半导体层以直接接触掩埋绝缘层。