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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09331199B2

    公开(公告)日：2016-05-03

    申请号：US14667810

    申请日：2015-03-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keun-Hwi Cho ,  Sung-Il Park ,  Byoung-Hak Hong ,  Toshinori Fukai ,  Mun-Hyeon Kim ,  Woong-Gi Kim ,  Sue-Hye Park ,  Dong-Won Kim ,  Dae-Won Ha

    IPC: H01L29/76 ,  H01L29/94 ,  H01L29/78 ,  H01L27/092 ,  H01L29/423 ,  H01L27/088 ,  H01L29/06

    CPC classification number: H01L29/7845 ,  H01L21/28123 ,  H01L21/82385 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/785

    Abstract: Provided is a semiconductor device to which a pattern structure for performance improvement is applied. The semiconductor device includes first and second active regions spaced apart from each other in a first direction with an isolation layer interposed therebetween, a first normal gate formed on the first active region to extend in a second direction crossing the first direction, a first dummy gate having a portion overlapping with one end of the isolation layer and the other portion overlapping with the first active region and spaced apart from the first normal gate in the first direction, a second dummy gate having a portion overlapping with the other end of the isolation layer and the other portion overlapping with the second active region, a first normal source/drain contact formed on a source/drain region between the first normal gate and the first dummy gate, and a dummy contact formed on the isolation layer so as not to overlap with the first and second dummy gates and having a different size from the first normal source/drain contact.

    Abstract translation: 提供了一种应用了用于性能改进的图案结构的半导体器件。 所述半导体器件包括在第一方向上彼此间隔开的第一和第二有源区，隔着隔离层彼此隔开的第一正常栅极，形成在第一有源区上以沿与第一方向交叉的第二方向延伸的第一正常栅极，第一伪栅极 具有与所述隔离层的一端重叠的部分，并且所述另一部分与所述第一有源区域重叠并且在所述第一方向上与所述第一正常栅极间隔开，第二伪栅极具有与所述隔离层的另一端重叠的部分 并且另一部分与第二有源区重叠，形成在第一正常栅极和第一伪栅极之间的源极/漏极区域上的第一正常源极/漏极接触器和形成在隔离层上以使得不重叠的虚拟接触 与第一和第二伪栅极并且具有与第一正常源极/漏极接触件不同的尺寸。

    Memory device and method of storing data with error correction using codewords
    4.
    发明授权
    Memory device and method of storing data with error correction using codewords 有权
    使用码字进行纠错的存储装置和存储数据的方法

    公开(公告)号：US08543892B2

    公开(公告)日：2013-09-24

    申请号：US13625554

    申请日：2012-09-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Soo Seol ,  Sung-Il Park ,  Kyoung Lae Cho ,  In-Sung Joe

    IPC: G11C21/00

    CPC classification number: H03M13/611 ,  G06F11/1072 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/00 ,  H03M13/13 ,  H03M13/15 ,  H03M13/27 ,  H03M13/2732 ,  H03M13/2906 ,  H03M13/3707 ,  H03M13/3715 ,  H03M13/47

    Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

    Abstract translation: 提供了存储器件和/或存储存储器数据位的方法。 存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字， 错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。 根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。

    Memory Device And Method Of Storing Data With Error Correction Using Codewords
    5.
    发明申请
    Memory Device And Method Of Storing Data With Error Correction Using Codewords 有权
    使用代码字进行纠错存储数据的存储器件和方法

    公开(公告)号：US20130019143A1

    公开(公告)日：2013-01-17

    申请号：US13625554

    申请日：2012-09-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Soo Seol ,  Sung-Il Park ,  Kyoung Lae Cho ,  In-sung Joe

    IPC: H03M13/05

    CPC classification number: H03M13/611 ,  G06F11/1072 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/00 ,  H03M13/13 ,  H03M13/15 ,  H03M13/27 ,  H03M13/2732 ,  H03M13/2906 ,  H03M13/3707 ,  H03M13/3715 ,  H03M13/47

    Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

    Abstract translation: 提供了存储器件和/或存储存储器数据位的方法。 存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字， 错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。 根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。

    Method for collecting information by electronic device and electronic device therefor
    8.
    发明授权
    Method for collecting information by electronic device and electronic device therefor 有权
    用于通过电子设备和电子设备收集信息的方法

    公开(公告)号：US09369901B2

    公开(公告)日：2016-06-14

    申请号：US14626476

    申请日：2015-02-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seong-Hee Park ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

    IPC: H04W24/08 ,  H04W8/00

    CPC classification number: H04W24/08 ,  G06Q30/02 ,  G06Q50/01 ,  H04W4/021 ,  H04W4/08 ,  H04W8/005

    Abstract: A method of an electronic device and a method of a server are provided. The method of the electronic device includes receiving a broadcast signal broadcast by another electronic device via a wireless communication; determining, based on the received broadcast signal, a number of times the another electronic device has been detected; and sending a request for information to the another electronic device, based on the determined number of times the another electronic device has been detected. The method of the server includes receiving information from a first electronic device; receiving, from a second electronic device, an information request message relating to the first electronic device which has been detected a threshold number of times or more by the second electronic device; and transmitting information registered by the first electronic device to the second electronic device.

    Abstract translation: 提供一种电子设备的方法和服务器的方法。 电子设备的方法包括：经由无线通信接收由另一电子设备广播的广播信号; 基于所接收的广播信号确定已经检测到另一电子设备的次数; 并且基于确定的另一电子设备被检测到的次数向另一电子设备发送信息请求。 服务器的方法包括从第一电子设备接收信息; 从所述第二电子设备接收与所述第二电子设备已经检测到阈值次数以上的所述第一电子设备相关的信息请求消息; 以及将由所述第一电子设备登记的信息发送到所述第二电子设备。

    Semiconductor device fabrication methods
    9.
    发明授权
    Semiconductor device fabrication methods 有权
    半导体器件制造方法

    公开(公告)号：US09012281B2

    公开(公告)日：2015-04-21

    申请号：US13829703

    申请日：2013-03-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-Dae Suk ,  Hee-Soo Kang ,  Sung-Il Park ,  Sang-Hoon Lee

    IPC: H01L21/8238 ,  H01L27/092

    CPC classification number: H01L27/0922 ,  H01L21/823871

    Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.

    Abstract translation: 半导体器件包括具有第一区域和第二区域的衬底，分别设置在第一和第二区域上的第一和第二栅极电极以及设置在第一和第二栅极的至少一侧上的第一和第二源极/漏极区域 电极。 该器件还分别包括第一和第二源极/漏极区域中的第一和第二硅化物区域。 第一硅化物区域和第一源极/漏极区域之间的接触区域的大小与第二硅化物区域和第二源极/漏极区域之间的接触面积不同。 还提供了制造这种装置的方法。

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