公开(公告)号：US12165916B2

公开(公告)日：2024-12-10

申请号：US17838740

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun Chung ,  Joon Gon Lee ,  Rak Hwan Kim ,  Chung Hwan Shin ,  Do Sun Lee ,  Nam Gyu Cho

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US10332984B2

公开(公告)日：2019-06-25

申请号：US15473143

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Seok Choi ,  Ryuji Tomita ,  Joon Gon Lee ,  Chul Sung Kim ,  Jae Eun Lee

IPC: H01L29/78 ,  H01L29/66 ,  H01L23/535 ,  H01L29/417 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device includes a substrate including an active region, a gate structure, source/drain regions, ones of the source/drain regions having an upper surface in which a recessed region is formed, a contact plug on the source/drain regions and extending in a direction substantially perpendicular to an upper surface of the substrate from an interior of the recessed region, a metal silicide film on an internal surface of the recessed region and including a first portion between a bottom surface of the recessed region and a lower surface of the contact plug and a second portion between a side wall of the recessed region and a side surface of the contact plug, and a metal layer connected to an upper portion of the metal silicide film and on a side surface of a region of the contact plug.

公开(公告)号：US11367651B2

公开(公告)日：2022-06-21

申请号：US16902923

申请日：2020-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun Chung ,  Joon Gon Lee ,  Rak Hwan Kim ,  Chung Hwan Shin ,  Do Sun Lee ,  Nam Gyu Cho

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US20210020500A1

公开(公告)日：2021-01-21

申请号：US16902923

申请日：2020-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun Chung ,  Joon Gon Lee ,  Rak Hwan Kim ,  Chung Hwan Shin ,  Do Sun Lee ,  Nam Gyu Cho

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US20190115451A1

公开(公告)日：2019-04-18

申请号：US16051635

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon Gon Lee ,  Kuo Tai Huang ,  Ryuji Tomita

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/308 ,  H01L23/532 ,  H01L29/08 ,  H01L29/423

Abstract: Methods of fabricating a semiconductor device are provided. The methods may include forming an active pattern on a substrate, forming a gate electrode traversing the active pattern on the active pattern, forming a recess adjacent to a sidewall of the gate electrode in the active pattern, and performing a chemical vapor deposition process using a source gas and a doping gas to form a source/drain region in the recess. The source gas may include a silicon precursor and a germanium precursor, and the doping gas may include a gallium precursor and a boron precursor.

公开(公告)号：US10128245B2

公开(公告)日：2018-11-13

申请号：US15473031

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Sun Lee ,  Joon Gon Lee ,  Na Rae Kim ,  Chul Sung Kim ,  Do Hyun Lee ,  Ryuji Tomita ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/165 ,  H01L29/45 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285

Abstract: Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.

公开(公告)号：US20180090583A1

公开(公告)日：2018-03-29

申请号：US15473143

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Seok Choi ,  Ryuji Tomita ,  Joon Gon Lee ,  Chul Sung Kim ,  Jae Eun Lee

IPC: H01L29/45 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/823821 ,  H01L21/845 ,  H01L23/485 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41766 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including an active region, a gate structure, source/drain regions, ones of the source/drain regions having an upper surface in which a recessed region is formed, a contact plug on the source/drain regions and extending in a direction substantially perpendicular to an upper surface of the substrate from an interior of the recessed region, a metal silicide film on an internal surface of the recessed region and including a first portion between a bottom surface of the recessed region and a lower surface of the contact plug and a second portion between a side wall of the recessed region and a side surface of the contact plug, and a metal layer connected to an upper portion of the metal silicide film and on a side surface of a region of the contact plug.