公开(公告)号：US10128245B2

公开(公告)日：2018-11-13

申请号：US15473031

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Sun Lee ,  Joon Gon Lee ,  Na Rae Kim ,  Chul Sung Kim ,  Do Hyun Lee ,  Ryuji Tomita ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/165 ,  H01L29/45 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285

Abstract: Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.