公开(公告)号：US20220319916A1

公开(公告)日：2022-10-06

申请号：US17838740

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun CHUNG ,  Joon Gon LEE ,  Rak Hwan KIM ,  Chung Hwan SHIN ,  Do Sun LEE ,  Nam Gyu CHO

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US20180090495A1

公开(公告)日：2018-03-29

申请号：US15473031

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Sun LEE ,  Joon Gon LEE ,  Na Rae KIM ,  Chul Sung KIM ,  Do Hyun LEE ,  Ryuji TOMITA ,  Sang Jin HYUN

IPC: H01L27/092 ,  H01L29/165 ,  H01L29/45 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L27/0924 ,  H01L21/02532 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823878 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4175 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7856

Abstract: Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.