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公开(公告)号:US10756185B2
公开(公告)日:2020-08-25
申请号:US15646184
申请日:2017-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ji-hoon Choi , Hong-suk Kim , Sung-gil Kim , Phil-ouk Nam , Seul-ye Kim , Han-jin Lim , Jae-young Ahn
IPC: H01L29/10 , H01L27/11 , H01L27/11565 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582
Abstract: A semiconductor device includes a substrate, a plurality of gate electrodes extending in a first direction parallel to an upper surface of a substrate on the substrate, and alternately arranged with an interlayer insulating layer in a second direction perpendicular to the upper surface of the substrate, a vertical channel layer on a sidewall of a vertical channel hole extending in the second direction by penetrating through the plurality of gate electrodes and the interlayer insulating layer, and connected to the upper surface of the substrate, and a first gap-fill insulating layer formed in the vertical channel hole and including an outer wall contacting the vertical channel layer and an inner wall opposite the outer wall, wherein a part of the inner wall forms a striation extending in the second direction.
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公开(公告)号:US10224185B2
公开(公告)日:2019-03-05
申请号:US14689559
申请日:2015-04-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young-jin Noh , Kwang-min Park , Eun-sung Seo , Young-chang Song , Jae-young Ahn , Hun-hyeong Lim , Ji-hoon Choi
IPC: C23C16/455 , H01J37/32
Abstract: A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.
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公开(公告)号:US11358484B2
公开(公告)日:2022-06-14
申请号:US16345514
申请日:2017-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hun Lee , Cheol-hoi Kim , Ji-hoon Choi
Abstract: Disclosed are a charger and a method of charging an electric vehicle. A main body of the charger includes a plurality of sub main bodies coupled to each other to transform its shape. The charger with the main body having a first shape moves toward the electric vehicle, and is then transformed to have a second shape. The first shape refers to a shape allowing the main body to be movable on a ground, and the second shape refers to a shape making the main body occupy a smaller surrounding area of the electric vehicle than the first shape. The electric vehicle is charged as connected to the charger having the second shape. The charger does not obstruct traffic of other vehicles because its size is reduced during charging.
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公开(公告)号:US20170366535A1
公开(公告)日:2017-12-21
申请号:US15696955
申请日:2017-09-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joo-yoon BAE , Hun Lee , Cheol-hoi Kim , Ji-hoon Choi
IPC: H04L29/06
CPC classification number: H04L63/0815 , G06F21/31 , G06F21/45 , H04L9/3226 , H04L63/0884
Abstract: Disclosed is a method of connecting to an online service, in which first authentication information is received from a terminal, at least one service available to the terminal is detected by using the first authentication information, and an automatic logging into the detected at least one service is performed.
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