公开(公告)号：US10756185B2

公开(公告)日：2020-08-25

申请号：US15646184

申请日：2017-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-hoon Choi ,  Hong-suk Kim ,  Sung-gil Kim ,  Phil-ouk Nam ,  Seul-ye Kim ,  Han-jin Lim ,  Jae-young Ahn

IPC: H01L29/10 ,  H01L27/11 ,  H01L27/11565 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor device includes a substrate, a plurality of gate electrodes extending in a first direction parallel to an upper surface of a substrate on the substrate, and alternately arranged with an interlayer insulating layer in a second direction perpendicular to the upper surface of the substrate, a vertical channel layer on a sidewall of a vertical channel hole extending in the second direction by penetrating through the plurality of gate electrodes and the interlayer insulating layer, and connected to the upper surface of the substrate, and a first gap-fill insulating layer formed in the vertical channel hole and including an outer wall contacting the vertical channel layer and an inner wall opposite the outer wall, wherein a part of the inner wall forms a striation extending in the second direction.

公开(公告)号：US09431416B2

公开(公告)日：2016-08-30

申请号：US14525361

申请日：2014-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Phil-ouk Nam ,  Jun-kyu Yang ,  Hun-hyeong Lim ,  Ki-hyun Hwang ,  Jae-young Ahn ,  Dong-chul Yoo

IPC: H01L21/02 ,  H01L27/115 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11575 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7926

Abstract: A vertical-type nonvolatile memory device includes a first vertical channel structure, and first and second stacked structure. The first vertical channel structure extends vertically on a substrate. The first stacked structure includes gate electrodes and first interlayer insulating layers. The gate layers and the first interlayer insulating layers are alternately and vertically stacked on each other. The first stacked structure is disposed on a first sidewall of the first vertical channel structure. The second stacked structure includes first sacrificial layers and second interlayer insulating layers. The first sacrificial layers and the second interlayer insulating layers are alternately and vertically stacked on each other. The second stacked structure is disposed on a second sidewall of the first vertical channel structure. The first sacrificial layers is formed of a polysilicon layer.

Abstract translation: 垂直型非易失性存储器件包括第一垂直沟道结构以及第一和第二堆叠结构。 第一垂直通道结构在衬底上垂直延伸。 第一堆叠结构包括栅电极和第一层间绝缘层。 栅极层和第一层间绝缘层彼此交替地和垂直地堆叠。 第一堆叠结构设置在第一垂直通道结构的第一侧壁上。 第二堆叠结构包括第一牺牲层和第二层间绝缘层。 第一牺牲层和第二层间绝缘层彼此交替地和垂直地堆叠。 第二堆叠结构设置在第一垂直通道结构的第二侧壁上。 第一牺牲层由多晶硅层形成。