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公开(公告)号:US20230046098A1
公开(公告)日:2023-02-16
申请号:US17680815
申请日:2022-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jongyoun KIM , Eungkyu KIM , Inhyung SONG , Hyeonseok LEE
IPC: H01L23/00 , H01L23/498 , H01L23/31 , H01L23/34
Abstract: A semiconductor package includes a package substrate, a semiconductor stack on the package substrate, a passive device on the package substrate and spaced apart from the semiconductor stack, and a stiffener on the package substrate and extending around an outer side of the semiconductor stack. The stiffener includes a first step surface extends over the passive device. A width of a bottom surface of the stiffener is smaller than a width of a top surface of the stiffener.
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公开(公告)号:US20240346312A1
公开(公告)日:2024-10-17
申请号:US18750655
申请日:2024-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jijoong MOON , Parichay KAPOOR , Jihoon LEE , Hyeonseok LEE , Myungjoo HAM
Abstract: An electronic apparatus may include a memory configured to store data related to a neural network model and at least one processor configured to divide a learning step performed through a plurality of layers of the neural network model into a plurality of steps including a forward propagation step, a gradient calculation step, and a derivative calculation step, and determine an execution order of the plurality of steps, obtain first information regarding in which step of a plurality of steps according to the determined execution order a plurality of sensors used in the plurality of layers are used, based on the determined execution order, integrate the determined execution order based on the first information and second information regarding whether tensors used in neighboring layers from among the plurality of layers are able to be shared, allocate the data to the plurality of tensors by minimizing a region of the memory for allocating data corresponding to the plurality of tensors, based on the integrated execution order, and train the neural network model according to the integrated execution order using the plurality of tensors and the data allocated to the plurality of tensors. Various other embodiments are possible to be implemented.
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公开(公告)号:US20240203850A1
公开(公告)日:2024-06-20
申请号:US18588699
申请日:2024-02-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jongyoun KIM , Minjun BAE , Hyeonseok LEE , Gwangjae JEON
IPC: H01L23/498 , H01L23/00 , H01L23/31 , H01L23/34 , H01L25/18
CPC classification number: H01L23/49811 , H01L23/3128 , H01L23/49822 , H01L24/16 , H01L25/18 , H01L23/34 , H01L24/73 , H01L2224/16227 , H01L2224/73204
Abstract: Disclosed are semiconductor packages and their fabricating methods. The semiconductor package comprises a redistribution substrate, a semiconductor chip on a top surface of the redistribution substrate, and a solder terminal on a bottom surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern in contact with the solder terminal, a dielectric layer on a sidewall of the under-bump pattern, an under-bump seed pattern between the dielectric layer and the sidewall of the under-bump pattern, and a redistribution pattern on the under-bump pattern. The under-bump pattern has central and edge regions. A first top surface at the edge region of the under-bump pattern is at a level higher than that of a second top surface at the central region of the under-bump pattern. An angle between the bottom surface and the sidewall of the under-bump pattern is in a range of 110° to 140°.
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公开(公告)号:US20240355779A1
公开(公告)日:2024-10-24
申请号:US18763686
申请日:2024-07-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeonseok LEE , Jongyoun KIM , Seokhyun LEE
IPC: H01L25/065 , H01L23/00 , H01L23/498 , H01L23/522 , H01L23/528
CPC classification number: H01L25/0655 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/5226 , H01L23/5283 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/13008 , H01L2224/13017 , H01L2224/13019 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13147 , H01L2224/13166 , H01L2224/13184 , H01L2224/13541 , H01L2224/13553 , H01L2224/1357 , H01L2224/16014 , H01L2224/16055 , H01L2224/16058 , H01L2224/16235 , H01L2224/1703 , H01L2224/17055 , H01L2924/182
Abstract: A semiconductor package includes a redistribution substrate having first and second surfaces, a first semiconductor chip on the first surface, external terminals on the second surface, a second semiconductor chip above the first semiconductor chip, external connection members below the second semiconductor chip, conductive pillars electrically connecting the external connection members to the redistribution substrate. The second semiconductor chip includes a device layer, a wiring layer, and a redistribution layer on a semiconductor substrate. The wiring layer includes intermetallic dielectric layers, wiring lines, and a conductive pad connected to an uppermost wiring line. The redistribution layer includes a first redistribution dielectric layer, a first redistribution pattern, and a second redistribution dielectric layer. A vertical distance between the semiconductor substrate and the conductive pillars is less than that between the first semiconductor chip and the external terminals.
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公开(公告)号:US20240120286A1
公开(公告)日:2024-04-11
申请号:US18371152
申请日:2023-09-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeonseok LEE , Eungkyu KIM , Jongyoun KIM , Hyeonjeong HWANG
IPC: H01L23/544 , H01L23/31 , H01L23/498 , H01L25/10
CPC classification number: H01L23/544 , H01L23/3128 , H01L23/49822 , H01L23/49833 , H01L25/105 , H01L24/16 , H01L2223/54426 , H01L2224/16227
Abstract: Provided is a semiconductor package including a lower redistribution structure, an internal semiconductor chip on an upper surface of the lower redistribution structure, an upper redistribution structure electrically connected to the lower redistribution structure through a conductive post, and a molding layer between the upper redistribution structure and the lower redistribution structure, the molding layer being adjacent to the internal semiconductor chip, wherein the upper redistribution structure includes an insulating layer including a redistribution pattern and a first material configured to transmit light, and a fiducial mark formed of the first material, and a lower surface of the fiducial mark is in contact with an upper surface of the molding layer.
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公开(公告)号:US20240065003A1
公开(公告)日:2024-02-22
申请号:US18295324
申请日:2023-04-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongkyu KIM , Kyounglim SUK , Hyeonseok LEE , Hyeonjeong HWANG
IPC: H10B80/00 , H01L23/522 , H01L23/00 , H01L23/31
CPC classification number: H10B80/00 , H01L23/5226 , H01L24/16 , H01L23/3157 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/11 , H01L2224/16145 , H01L2224/0401 , H01L2224/08145 , H01L2224/13147 , H01L2224/13124 , H01L2224/13155 , H01L2224/1318 , H01L2224/13144 , H01L2224/13139 , H01L2224/13171 , H01L2224/13111 , H01L2224/13166 , H01L2224/1146
Abstract: A semiconductor package includes a memory chip having chip pads on a first surface thereof. A redistribution layer is formed on the first surface of the memory chip. The redistribution layer is electrically connected to the chip pads. The redistribution layer has first redistribution pads on a first surface of the redistribution layer in a first region and a plurality of second redistribution pads on the first surface of the redistribution layer in a second region thereof. A processor chip is disposed on the first region of the redistribution layer and is electrically connected to the first redistribution pads. A sealing member is disposed on the first surface of the redistribution layer and covers the processor chip. Conductive structures are on the second region and penetrate through the sealing member and extend upwardly in a vertical direction away from the second redistribution pads.
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公开(公告)号:US20240038642A1
公开(公告)日:2024-02-01
申请号:US18121429
申请日:2023-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongkyu Kim , Joonsung KIM , Hyeonseok LEE , Hyeonjeong HWANG
IPC: H01L23/498 , H01L23/31 , H01L23/00 , H01L25/10
CPC classification number: H01L23/49811 , H01L23/3128 , H01L23/49822 , H01L24/16 , H01L25/105 , H01L2224/16227 , H01L2224/32225 , H01L24/32 , H01L2224/73204 , H01L24/73
Abstract: A semiconductor package includes a first redistribution substrate, a semiconductor chip provided on a top surface of the first redistribution substrate, a conductive structure provided on the top surface of the first redistribution substrate and spaced apart from the semiconductor chip, a molding layer provided on the first redistribution substrate and covering a side surface of the semiconductor chip and a side surface of the conductive structure, and a second redistribution substrate on the molding layer and the conductive structure. The conductive structure includes a first conductive structure provided on the first redistribution substrate, and a second conductive structure provided on a top surface of the first conductive structure. The second redistribution substrate includes an insulating layer. At least a portion of a top surface of the second conductive structure directly contacts the insulating layer of the second redistribution substrate.
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公开(公告)号:US20230069490A1
公开(公告)日:2023-03-02
申请号:US17723981
申请日:2022-04-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeonseok LEE , Jongyoun KIM , Seokhyun LEE
IPC: H01L25/065 , H01L23/00 , H01L23/498 , H01L23/522 , H01L23/528
Abstract: A semiconductor package includes a redistribution substrate having first and second surfaces, a first semiconductor chip on the first surface, external terminals on the second surface, a second semiconductor chip above the first semiconductor chip, external connection members below the second semiconductor chip, conductive pillars electrically connecting the external connection members to the redistribution substrate. The second semiconductor chip includes a device layer, a wiring layer, and a redistribution layer on a semiconductor substrate. The wiring layer includes intermetallic dielectric layers, wiring lines, and a conductive pad connected to an uppermost wiring line. The redistribution layer includes a first redistribution dielectric layer, a first redistribution pattern, and a second redistribution dielectric layer. A vertical distance between the semiconductor substrate and the conductive pillars is less than that between the first semiconductor chip and the external terminals.
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公开(公告)号:US20220310496A1
公开(公告)日:2022-09-29
申请号:US17509224
申请日:2021-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jongyoun KIM , Minjun BAE , Hyeonseok LEE , Gwangjae JEON
IPC: H01L23/498 , H01L23/00 , H01L25/18 , H01L23/31
Abstract: Disclosed are semiconductor packages and their fabricating methods. The semiconductor package comprises a redistribution substrate, a semiconductor chip on a top surface of the redistribution substrate, and a solder terminal on a bottom surface of the redistribution substrate. The redistribution substrate includes an under-bump pattern in contact with the solder terminal, a dielectric layer on a sidewall of the under-bump pattern, an under-bump seed pattern between the dielectric layer and the sidewall of the under-bump pattern, and a redistribution pattern on the under-bump pattern. The under-bump pattern has central and edge regions. A first top surface at the edge region of the under-bump pattern is at a level higher than that of a second top surface at the central region of the under-bump pattern. An angle between the bottom surface and the sidewall of the under-bump pattern is in a range of 110° to 140°.
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