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    Methods for fabricating semiconductor devices having through electrodes
    3.
    发明授权
    Methods for fabricating semiconductor devices having through electrodes 有权
    制造具有贯通电极的半导体器件的方法

    公开(公告)号：US09543200B2

    公开(公告)日：2017-01-10

    申请号：US14183817

    申请日：2014-02-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kunsang Park ,  Sukyoung Kim ,  Jisoon Park ,  Ju-Il Choi ,  Byung Lyul Park ,  Gilheyun Choi

    IPC: H01L21/768

    CPC classification number: H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

    Abstract: Methods for fabricating semiconductor devices having through electrodes are provided. The method may comprise forming a via hole which opens towards an upper surface of a substrate and disconnects with a lower surface of the substrate; forming a via isolation layer which extends along an inner surface of the via hole and covers the upper surface of the substrate; forming a seed layer on the via isolation layer which extends along the via isolation layer; annealing the seed layer in-situ after forming the seed layer; forming a conductive layer, filling the via hole, by an electroplating using the seed layer; and planarizing the upper surface of the substrate to form a through electrode surrounded by the via isolation layer in the via hole.

    Abstract translation: 提供了具有通孔电极的制造半导体器件的方法。 该方法可以包括形成朝向衬底的上表面打开并且与衬底的下表面断开的通孔; 形成沿所述通孔的内表面延伸并覆盖所述基板的上表面的通孔隔离层; 在沿通孔隔离层延伸的通孔隔离层上形成晶种层; 在形成种子层之后，原位退火晶种层; 通过使用种子层的电镀形成导电层，填充所述通孔; 并且平坦化衬底的上表面以形成由通孔中的通孔隔离层包围的通孔。

    Semiconductor devices and methods of fabricating the same
    6.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权
    半导体器件及其制造方法

    公开(公告)号：US09076849B2

    公开(公告)日：2015-07-07

    申请号：US14094963

    申请日：2013-12-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin Ho An ,  Byung-Lyul Park ,  Soyoung Lee ,  Gilheyun Choi

    IPC: H01L21/44 ,  H01L21/768

    CPC classification number: H01L23/5384 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/09 ,  H01L2224/0401 ,  H01L2224/08146 ,  H01L2224/13 ,  H01L2224/16145 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00

    Abstract: Semiconductor devices, and methods of fabricating a semiconductor device, include forming a via hole through a first surface of a substrate, the via hole being spaced apart from a second surface facing the first surface, forming a first conductive pattern in the via hole, forming an insulating pad layer on the first surface of the substrate, the insulating pad having an opening exposing the first conductive pattern, performing a thermal treatment on the first conductive pattern to form a protrusion protruding from a top surface of the first conductive pattern toward the opening, and then, forming a second conductive pattern in the opening.

    Abstract translation: 半导体器件以及制造半导体器件的方法包括：通过基板的第一表面形成通孔，所述通孔与面向第一表面的第二表面间隔开，在通孔中形成第一导电图案，形成 在所述基板的第一表面上的绝缘垫层，所述绝缘垫具有暴露所述第一导电图案的开口，对所述第一导电图案进行热处理，以形成从所述第一导电图案的顶表面朝向所述开口突出的突起 ，然后在开口中形成第二导电图案。

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